FAIRCHILD SGH20N120RUF

SGH20N120RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) RUF series provides low conduction and switching
losses as well as short circuit ruggedness. The RUF series
is designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
Short circuit rated 10µs @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
E
TO-3P
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGH20N120RUF
1200
± 25
32
20
60
10
230
92
-55 to +150
-55 to +150
Units
V
V
A
A
A
µs
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
---
Max.
0.54
40
Units
°C/W
°C/W
SGH20N120RUF Rev. B2
SGH20N120RUF
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 1mA
1200
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
1
± 100
mA
nA
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 32A, VGE = 15V
3.5
---
5.5
2.3
2.8
7.5
3.0
--
V
V
V
----
2000
170
60
----
pF
pF
pF
---------------
30
60
70
150
1.30
1.30
2.60
30
70
90
200
1.50
2.00
3.50
--130
300
--3.65
--165
400
--5.08
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Le
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
©2002 Fairchild Semiconductor Corporation
VCC = 600 V, IC = 20A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 20A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 600 V, VGE = 15V
100°C
@ TC =
VCE = 600 V, IC = 20A,
VGE = 15V
Measured 5mm from PKG
10
--
--
µs
-----
95
15
43
14
140
25
65
--
nC
nC
nC
nH
SGH20N120RUF Rev. B2
SGH20N120RUF
Electrical Characteristics of the IGBT T
100
17V
20V
TC = 25℃
120
15V
80
12V
60
Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
80
100
Collector Current, IC [A]
Collector Current, IC [A]
SGH20N120RUF
140
40
VGE = 10V
60
40
20
20
0
0
0
2
4
6
8
10
0
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Saturation Voltage Characteristics
3.2
40
Common Emitter
VGE = 15V
3.0
VCC = 600V
Load Current : peak of square wave
32A
30
2.8
Load Current [A]
Collector - Emitter Voltage, VCE [V]
2
Collector - Emitter Voltage, VCE [V]
2.6
2.4
IC = 20A
2.2
20
10
Duty cycle : 50%
T C = 100℃
2.0
Power Dissipation = 45W
0
1.8
25
50
75
100
125
0.1
150
1
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
100
1000
Fig 4. Load Current vs. Frequency
20
20
Collector - Emitter Voltage, VCE [V]
Common Emitter
T C = 25℃
Collector - Emitter Voltage, VCE [V]
10
Frequency [KHz]
Case Temperature, TC [℃]
16
12
8
40A
4
20A
IC = 10A
Common Emitter
T C = 125℃
16
12
8
40A
4
20A
I C = 10A
0
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGH20N120RUF Rev. B2
SGH20N120RUF
3000
2000
Switching Time [ns]
2500
Capacitance [pF]
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 20A
TC = 25℃
TC = 125℃
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Cies
1500
1000
500
tr
100
td(on)
Coes
Cres
0
10
1
10
10
Collector - Emitter Voltage, VCE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 20A
T C = 25℃
T C = 125℃
td(off)
tf
100
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 20A
T C = 25℃
T C = 125℃
Switching Loss [µJ]
Fig 7. Capacitance Characteristics
Switching Time [ns]
100
Gate Resistance, RG [Ω ]
Eon
Eoff
Eoff
1000
10
100
10
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃
TC = 125℃
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃
TC = 125℃
100
Switching Time [ns]
Switchig Time [ns]
100
Gate Resistance, RG [Ω ]
tr
td(on)
tf
100
td(off)
10
10
15
20
25
30
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
35
40
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH20N120RUF Rev. B2
SGH20N120RUF
16
Common Emitter
RL = 30Ω
TC = 25℃
14
Eoff
Gate - Emitter Voltage, VGE [V]
Switching Loss [µJ]
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃
TC = 125℃
Eon
Eoff
1000
600V
12
10
400V
8
VCC = 200V
6
4
2
0
10
15
20
25
30
35
0
40
20
80
100
100
100
50µ s
IC MAX. (Pulsed)
100µ s
IC MAX. (Continuous)
1ms
Collector Current, I C [A]
Collector Current, I C [A]
60
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
10
40
Gate Charge, Qg [nC]
Collector Current, I C [A]
DC Operation
1
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.01
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
0.1
1
10
100
1000
1
10
Collector - Emitter Voltage, V CE [V]
100
1000
Collector - Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Thermal Response [Zthjc]
10
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
0.01
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH20N120RUF Rev. B2
TO-3P (FS PKG CODE AF)
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGH20N120RUF Rev. B2
SGH20N120RUF
Package Dimension
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5