FAIRCHILD SGW5N60RUF

SGW5N60RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for
applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
Short circuit Rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A
High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G
E
D2-PAK
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGW5N60RUF
600
± 20
8
5
15
10
60
25
-55 to +150
-55 to +150
Units
V
V
A
A
A
us
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Typ.
---
Max.
2.0
40
Units
°C/W
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGW5N60RUF Rev. A1
SGW5N60RUF
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
IC = 5mA, VCE = VGE
IC = 5A, VGE = 15V
IC = 8A, VGE = 15V
5.0
---
6.0
2.2
2.5
8.5
2.8
--
V
V
V
VCE = 30V, VGE = 0V,
f = 1MHz
----
354
67
14
----
pF
pF
pF
---------------
13
24
34
136
88
107
195
13
26
40
250
103
220
323
--50
200
--280
--60
350
----
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Le
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
©2002 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 5A,
RG = 40Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 5A,
RG = 40Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
100°C
@ TC =
VCE = 300 V, IC = 5A,
VGE = 15V
Measured 5mm from PKG
10
--
--
us
-----
16
3
7
7.5
24
6
14
--
nC
nC
nC
nH
SGW5N60RUF Rev. A1
SGW5N60RUF
Electrical Characteristics of the IGBT T
20
20V
Common Emitter
T C = 25℃
15V
15
12V
10
VGE = 10V
Common Emitter
V GE = 15V
T C = 25℃ ━━
T C = 125℃ ------
16
Collector Current, IC [A]
Collector Current, I C [A]
20
12
8
4
5
0
0
0
2
4
6
1
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 1. Typical Output Characteristics
10
4.0
VCC = 300V
Load Current : peak of square wave
Common Emitter
V GE = 15V
3.5
8
10A
3.0
Load Current [A]
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
2.5
5A
2.0
6
4
IC = 3A
2
1.5
Duty cycle : 50%
T C = 100℃
Power Dissipation = 12W
0
1.0
-50
0
50
100
0.1
150
1
10
Case Temperature, TC [℃]
100
1000
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 25℃
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
SGW5N60RUF
25
16
12
8
10A
4
5A
16
12
8
10A
4
5A
IC = 3A
IC = 3A
0
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
SGW5N60RUF Rev. A1
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
500
400
Switching Time [ns]
Capacitance [pF]
600
Cies
300
200
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 5A
TC = 25℃ ━━
TC = 125℃ ------
100
Ton
Tr
Coes
100
10
Cres
0
1
10
10
100
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, V CE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
1000
Switching Loss [uJ]
Switching Time [ns]
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 5A
TC = 25℃ ━━
TC = 125℃ -----Toff
Tf
Toff
Eoff
Eon
Eoff
100
Common Emitter
V CC = 300V, VGE = ± 15V
IC = 5A
T C = 25℃ ━━
T C = 125℃ ------
Tf
100
10
10
100
10
Gate Resistance, R G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VGE = ± 15V, RG = 40 Ω
TC = 25℃ ━━
TC = 125℃ ------
Common Emitter
VGE = ± 15V, RG = 40 Ω
TC = 25℃ ━━
TC = 125℃ ------
1000
100
Ton
Tr
Switching Time [ns]
Switching Time [ns]
100
Gate Resistance, R G [Ω ]
Tf
Toff
Toff
Tf
100
10
3
4
5
6
7
8
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
9
10
3
4
5
6
7
8
9
10
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW5N60RUF Rev. A1
SGW5N60RUF
700
15
Gate - Emitter Voltage, VGE [V]
Common Emitter
VGE = ± 15V, RG = 40Ω
T C = 25℃ ━━
T C = 125℃ ------
Switching Loss [uJ]
SGW5N60RUF
1000
Eoff
100
Eon
Common Emitter
RL = 60Ω
T C = 25℃
12
300V
200V
VCC = 100V
9
6
3
0
3
4
5
6
7
8
9
0
10
3
6
9
12
15
18
Gate Charge, Qg [nC]
Collector Current, IC [A]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
50
40
Ic MAX. (Pulsed)
50us
1㎳
DC Operation
1
0.1
100us
Ic MAX. (Continuous)
Collector Current, I C [A]
Collector Current, IC [A]
10
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
10
100
1
1000
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristic
Thermal Response, Zthjc [℃/W]
10
1
0.5
0.2
0.1
0.05
0.1
Pdm
0.02
t1
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
single pulse
0.01
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGW5N60RUF Rev. A1
SGW5N60RUF
Package Dimension
4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
2.54 TYP
(0.75)
°
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
1.40 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2-PAK
+0.10
0.50 –0.05
2.54 TYP
9.20 ±0.20
(2XR0.45)
4.90 ±0.20
15.30 ±0.30
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
0.80 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGW5N60RUF Rev. A1
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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2. A critical component is any component of a life support
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device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5