RM806 Power Amplifier Module for TDMA AMPS (824–849 MHz) The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth. • Good linearity This device meets stringent IS-136 linearity requirements beyond 30 dBm output power and can be driven to power output levels beyond 31 dBm for high efficiency FM mode operation. A single GaAs (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains onboard bias circuitry as well as input and interstage matching circuits. The output match is realized off-chip within the module package to optimize efficiency and power performance into a 50 ohm load. This device is manufactured using Skyworks’ GaAs Heterojunction Bipolar Transistor (HBT) process, which provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. Primary bias to the RM806 can be supplied directly from a three-cell nickel cadmium, a single-cell lithium-ion battery, or any other suitable battery with output in the 3 to 4 volts range. Power down is accomplished by setting the low current reference pin to zero volts. No external supply side switch is needed as typical “off” leakage is a few microamperes with full primary voltage supplied from the battery. • • • • • High efficiency Dual mode operation Large dynamic range 6-pin package (6 mm x 6mm x 1.5 mm) Power down control Applications • • • Digital cellular (TDMA) Analog cellular (AMPS) Wireless local loop (WLL) Functional Block Diagram VREF (3) Driver Stage Bias RFIN (2) Input Match VCC2 (4) VCC1 (1) Power Stage Bias DA Inter Stage Match PA Output Match RFOUT (5) MMIC MODULE (6, 7) GND (6, 7) GND Data Sheet © 2001, Skyworks Solutions, Inc., All Rights Reserved. 100602G February 7, 2002 RM806 Electrical Specifications Power Amplifier Module for TDMA AMPS (824–849 MHz) Electrical Specifications The following tables list the electrical characteristics for the RM806 Power Amplifier. Table 1 lists the absolute maximum rating for continuous operation. Table 2 lists the recommended operating conditions for achieving the electrical performance listed in Table 4. Table 1. Absolute Maximum Ratings(1) Parameter Symbol Minimum Nominal Maximum Unit RF Input Power Pin — 3.0 8.0 dBm Supply Voltage Vcc — 3.4 5.0(2) Volts Reference Voltage Vref — 3.1 3.3 Volts Tc –30 +25 +110 °C Tstg –55 — +125 °C Case Operating Temperature Storage Temperature NOTE(S): (1) No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. (2) Under pulsed TDMA modulated mode, operation at maximum supply voltage of 6.2 V up to 100 ms. Table 2. Recommended Operating Conditions Parameter 2 Symbol Minimum Nominal Maximum Unit Supply Voltage Vcc 3.0 3.4 4.2 Volts Reference Voltage Vref 3.0 3.1 3.3 Volts Operating Frequency Fo 824 836.5 849 MHz Operating Temperature To –30 +25 +85 °C Skyworks 100602G February 7, 2002 RM806 Electrical Specifications Power Amplifier Module for TDMA AMPS (824–849 MHz) Table 3. Electrical Specifications for TDMA / AMPS Nominal Operating Conditions(1) Characteristics Condition Symbol Minimum(2) Typical Maximum(2) Unit Quiescent current — Iq — 150.0 165.0 mA Reference current Po ≤ 32 dBm Iref — 6.3 7.0 mA PA Off — — 2.0 25.0 uA Gain–Analog Po = 0 dBm Po = 31 dBm G Gp 29.5 28.5 30.5 30.0 32.0 31.0 dB dB Gain–Digital Po = 0 dBm Po = 30 dBm G Gp 29.5 28.5 30.5 30.0 32.0 31.0 dB dB Power Added Efficiency Analog Mode Po = 31 dBm Digital Mode Po = 30 dBm PAEa PAEd 43.0 38.0 45.0 42.0 — — % % Adjacent Channel Power (3) 30 kHz Offset Po ≤ 30 dBm 60 kHz Offset Po ≤ 30 dBm 90 kHz Offset Po ≤ 30 dBm ACP1 ACP2 ACP3 — — — –30.5 –52.5 –62.0 –29.0 –50.0 –52.0 dBc dBc dBc H2 H3 — — –50 –42 –43.0 –40.0 dBc dBc Leakage current Harmonics Second Po ≤ 31 dBm Third Po ≤ 31 dBm PA “Turn Off Time” — — — 10 — µs PA “Turn On Time” — — — 10 — µs Po ≤ 31 dBm Np — –136.5 –133.0 dBm/Hz Noise Figure — NF — 5.5 7.0 dB Input VSWR — VSWR — 1.5:1 1.6:1 — Stability (Spurious output) 5:1 VSWR All phases S — — –60 dBc Ruggedness—No damage Po ≤ 31 dBm Ru — — 8:1 VSWR Noise Power in RX Band 869-894 MHz(4) NOTE(S): (1) Vcc = +3.4 V, Vref = +3.1 V, Freq = 836.5 MHz, Tc = 25 °C. Min/Max values indicate performance over process corners and conditions specified in note 1 above unless otherwise detailed. (3) Also meets same linearity for Po ≤ 28.5 dBm @ Vcc = +3.0 V. (4) With NADC modulation applied. (2) 100602G February 7, 2002 Skyworks 3 RM806 Electrical Specifications Power Amplifier Module for TDMA AMPS (824–849 MHz) Table 4. Electrical Specifications for TDMA / AMPS Nominal Operating Conditions(1) Characteristics Condition Symbol Minimum(2) Typical Maximum(2) Unit Quiescent current — Iq — 150.0 185.0 mA Reference current Po ≤ 32 dBm Iref — 6.3 7.6 mA Leakage current(4) PA Off — — 2.0 25.0 uA Gain–Analog Po = 0 dBm Po = 31 dBm G Gp 27.5 26.0 30.5 30.0 33.0 33.0 dB dB Gain–Digital Po = 0 dBm Po = 30 dBm G Gp 27.5 26.0 30.5 30.0 32.5 32.5 dB dB Power Added Efficiency Analog Mode Po = 31 dBm Digital Mode Po = 30 dBm PAEa PAEd 41.0 37.0 45.0 42.0 — — % % Adjacent Channel Power (2) 30 kHz Offset Po ≤ 30 dBm 60 kHz Offset Po ≤ 30 dBm 90 kHz Offset Po ≤ 30 dBm ACP1 ACP2 ACP3 — — — –30.5 –52.5 –62.0 –27.0 –46.0 –50.0 dBc dBc dBc H2 H3 — — –50 –42 –35.0 –35.0 dBc dBc Harmonics Second Po ≤ 31 dBm Third Po ≤ 31 dBm PA “Turn Off Time” — — — 10.0 30.0 µs PA “Turn On Time” — — — 10.0 30.0 µs Po ≤ 31 dBm Np — –136.5 –132.0 dBm/Hz Noise Figure — NF — 5.5 8.0 dB Input VSWR — VSWR — 1.5:1 2.0:1 — Stability (Spurious output)(4) 5:1 VSWR All phases S — — –60 dBc Ruggedness—No damage(4) Po ≤ 31 dBm Ru — — 8:1 VSWR Noise Power in RX Band 869-894 MHz(3) NOTE(S): 1. Min/Max values indicate performance over process corners and conditions specified in note (1) below unless otherwise detailed. (1) Per Table 3 with Vcc = +3.4 V. (2) Also meets same linearity for Po ≤ 28.5 dBm @ Vcc = +3.0 V and as further specified in note (1) above. (3) With NADC modulation applied. Tc = 25 °C (4) Tc = 25 °C 4 Skyworks 100602G February 7, 2002 RM806 Characterization Data Power Amplifier Module for TDMA AMPS (824–849 MHz) Characterization Data The following graphs illustrate characteristics for a typical RM806 Power Amplifier. The amplifier was selected by characterizing a group of devices and selecting a part having average electrical performance both at nominal and worst case. Figures 1 through 5 illustrate the digital signal characteristics and Figures 6 through 9 illustrate the analog characteristics for the RM806. Figure 1. Digital Gain vs. Output Power Vref = 3.1 V, Vcc = 3.4 V 35.0 32.5 Gain (dB) 30.0 27.5 25.0 22.5 20.0 0 5 10 15 Output Power (dBm) 20 25 30 Legend 100602G February 7, 2002 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Skyworks 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 5 RM806 Characterization Data Power Amplifier Module for TDMA AMPS (824–849 MHz) Figure 2. Digital Power Added Efficiency vs. Output Power Vref = 3.1 V, Vcc = 3.4 V 50 Digital PAE (%) 40 30 20 10 0 0 5 10 15 20 Output Power (dBm) 25 30 Figure 3. Digital Adjacent Channel Power vs. Output Power Vref = 3.1 V, Vcc = 3.4 V, 30 kHz Offset 0 ACPR1 (dBc) -10 -20 -30 -40 -50 0 5 10 15 20 25 30 Output Power (dBm) Legend 6 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Skyworks 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 100602G February 7, 2002 RM806 Characterization Data Power Amplifier Module for TDMA AMPS (824–849 MHz) Figure 4. Digital Alternate1 Channel Power vs. Output Power Vref = 3.1 V, Vcc = 3.4 V, 60 kHz Offset -30 ACPR2 (dBc) -40 -50 -60 -70 -80 0 5 10 15 20 25 30 Output Power (dBm) Figure 5. Digital Alternate2 Channel Power vs. Output Power Vref = 3.1 V, Vcc = 3.4 V, 90 kHz Offset -30 ACPR3 (dBc) -40 -50 -60 -70 -80 0 5 10 15 20 25 30 Output Power (dBm) Legend 100602G February 7, 2002 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Skyworks 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 7 RM806 Characterization Data Power Amplifier Module for TDMA AMPS (824–849 MHz) Figure 6. Analog Gain vs. Output Power Vref = 3.1 V, Vcc = 3.4 V 35.0 32.5 Gain (dB) 30.0 27.5 25.0 22.5 20.0 0 5 10 15 20 Output Power (dBm) 25 30 25 30 Figure 7. Analog Power Added Efficiency vs. Output Power Vref = 3.1 V, Vcc = 3.4 V 50 Analog PAE (%) 40 30 20 10 0 0 5 10 15 20 Output Power (dBm) Legend 8 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Skyworks 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 100602G February 7, 2002 RM806 Characterization Data Power Amplifier Module for TDMA AMPS (824–849 MHz) Figure 8. Analog Second Order Harmonic vs. Output Power Vref = 3.1 V, Vcc = 3.4 V Second Order Analog Harmonics (dBc) 0 -10 -20 -30 -40 -50 -60 -70 -80 0 5 10 15 20 Output Power (dBm) 25 30 Figure 9. Analog Third Order Harmonic vs. Output Power Vref = 3.1 V, Vcc = 3.4 V 0 Third Order Analog Harmonics (dBc) -10 -20 -30 -40 -50 -60 -70 -80 0 5 10 15 20 Output Power (dBm) 25 30 Legend 100602G February 7, 2002 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Skyworks 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 9 RM806 Evaluation Board Description Power Amplifier Module for TDMA AMPS (824–849 MHz) Evaluation Board Description The evaluation board is a platform for testing and interfacing design circuitry. To accommodate the interface testing of the RM806, the evaluation board schematic and diagrams are included for preliminary analysis and design. Figure 10 shows the basic schematic of the board for the 824 MHz to 849 MHz range. Figure 11 illustrates the board layout. Figure 10. Evaluation Board Schematic 22 pF 220 pF C5 RFIN C1 1 6 2 5 RM806 3 VREF GND 18 pF RFOUT 4 C3 Vcc GND GND 150 pF 39 pF 4.7uF C4 C6 GND C2 GND GND Notes: 1) Bottom of the package [pin 7] is GND and must be soldered. 2) Input and Output DC Blocking caps are required for TDMA Cellular 3) All external components must be located no greater than 90 mils [2.29mm] from edge of Module. 4) Vcc line should have ground layer isolation from RFIN and VREF 5) Application PCB and Production Test PCB require the same schematic. 100602_005 Figure 11. Evaluation Board Diagram C5 J1 C3 C1 C6 C2 RF IN C4 J2 RF OUT SKYWORKS Notes: 1) C1 and C3 must be inserted. GND Vcc Vref GND 6x6_ENG_EVAL_BD 09-10-99 J3 100602_004 10 Skyworks 100602G February 7, 2002 RM806 Package Dimensions and Pin Description Power Amplifier Module for TDMA AMPS (824–849 MHz) Package Dimensions and Pin Description The RM806 is a multi-layer laminate base, overmold encapsulated modular package designed for surface mount solder attachment to a printed circuit board. Figure 12. RM806 Package Drawing 2.870 (2x) 1.981 (2x) 1.219 (2x) (PIN 1) 1 6 6 (PIN 7) 2.500 (4x) 2 5 3 4 5.92/6.15 2 5 3 4 TOP VIEWS 5.92/6.15 .762 R .500 TYP NOTE: Solder mask pattern pad layout as seen from top looking through package. 1.500 TYP All dimensions in millimeters. FRONT VIEW 100602_002 Table 5. Pin Description Pin # Function 1 VCC1(1) 2 RF Input 3 VREF 4 VCC2(1) 5 RF Output 6 GND (7) GND PAD GND(2) NOTE(S): (1) (2) All supply pins may be connected together at the supply. Package underside is GND. 100602G February 7, 2002 Skyworks 11 RM806 Package and Handling Information Power Amplifier Module for TDMA AMPS (824–849 MHz) Package and Handling Information Because this device package is sensitive to moisture absorption, it is baked and vacuum packed prior to shipment. Instructions on the shipping container label regarding exposure to moisture after the container seal is broken must be followed. Otherwise, problems related to moisture absorption may occur when the part is subjected to high temperature during solder assembly. If the part is attached in a reflow oven, the temperature ramp rate should not exceed 5 °C per second; Maximum temperature should not exceed 225 °C. If the part is manually attached, precaution should be taken to insure that the part is not subjected to a temperature exceeding 225 °C for more than 10 seconds. Care must be taken when attaching this product, whether it is done manually or in a production solder reflow environment. For additional details on both attachment techniques, precautions, and handling procedures recommended by Skyworks, please refer to Application Note: Solder Reflow, Document Number 101536. Production quantities of this product are shipped in the standard tape-and-reel format. For packaging details, refer to Application Note: Tape and Reel, Document Number 101568. Figure 13. Typical Case Markings SKYWORKS Pin 1 Identifier RM806-NN NXXXXX.XX YYWW MEX Manufacturing Part Number-Revision Number Lot Number YY = Manufacture Year WW = Week Package Sealed MEX = Country Code 100602_006 12 Skyworks 100602G February 7, 2002 RM806 Electrostatic Discharge Sensitivity Power Amplifier Module for TDMA AMPS (824–849 MHz) Electrostatic Discharge Sensitivity The RM806 is a Class I device. Figure 14 lists the Electrostatic Discharge (ESD) immunity level for each pin of the RM806 product. The numbers in Figure 14 specify the ESD threshold level for each pin where the I-V curve between the pin and ground starts to show degradation. The ESD testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body Model. Since 2000 volts represents the maximum measurement limit of the test equipment used, pins marked > 2000 V pass 2000V ESD stress. Figure 14. ESD Sensitivity Areas > + 2000 V < – 2000 V 1 Vcc1 GND 6 > + 2000 V < – 1500 V 2 RFIN RFOUT 5 > + 2000 V < – 2000 V > + 2000 V < – 2000 V 3 Vref Vcc2 4 > + 2000 V < – 2000 V 100602_007 Various failure criteria can be utilized when performing ESD testing. Many vendors employ relaxed ESD failure standards which fail devices only after “the pin fails the electrical specification limits” or “the pin becomes completely non-functional”. Skyworks employs most stringent criteria, fails devices as soon as the pin begins to show any degradation on a curve tracer. To avoid ESD damage, latent or visible, it is very important the Class-1 ESD handling precautions listed in Table 6 be used in the product assembly and test areas follow. Table 6. Precautions for GaAs ICs with ESD Thresholds Greater Than 200V But Less Than 2000V Personnel Grounding Wrist Straps Conductive Smocks, Gloves and Finger Cots Antistatic ID Badges Facility Relative Humidity Control and Air Ionizers Dissipative Floors (less than 109 Ω to GND) Protective Workstation Dissipative Table Tops Protective Test Equipment (Properly Grounded) Grounded Tip Soldering Irons Conductive Solder Suckers Static Sensors Protective Packaging & Transportation Bags and Pouches (Faraday Shield) Protective Tote Boxes (Conductive Static Shielding) Protective Trays Grounded Carts Protective Work Order Holders 100602G February 7, 2002 Skyworks 13 RM806 Electrostatic Discharge Sensitivity Power Amplifier Module for TDMA AMPS (824–849 MHz) 14 Skyworks 100602G February 7, 2002 Ordering Information Model Number Manufacturing Part Number Product Revision Package Operating Temperature RM806 RM806–14 14 6X6LM–6 –30 °C to +85 °C Level Date Revision History Revision Description A March 2000 Initial Release B March 2000 Updated Data Tables C May 2000 D February 2001 E March 2001 Revised: Table 3; Figure 12; Packaging & Handling Information; Manufacturing Part Number F September 2001 Revise: ESD data; Product Revision from 13 to 14. G February 7, 2002 Revise: Table 1 footnote 2. Updated Characterization Data Add Table 4; Revise Evaluation Board Information; Soldering & Temperature Guidelines; Revise Figures 13, 14 & Table 3. © 2002, Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. ("Skyworks") products. These materials are provided by Skyworks as a service to its customers and may be used for informational purposes only. Skyworks assumes no responsibility for errors or omissions in these materials. Skyworks may make changes to its products, specifications and product descriptions at any time, without notice. Skyworks makes no commitment to update the information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from future changes to its products and product descriptions. 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