ETC RM806

RM806
Power Amplifier Module for TDMA AMPS (824–849 MHz)
The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features
module designed for Time Division Multiple Access (TDMA) and Advanced Mobile
• Low voltage positive bias supply
Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth. • Good linearity
This device meets stringent IS-136 linearity requirements beyond 30 dBm output
power and can be driven to power output levels beyond 31 dBm for high efficiency FM
mode operation. A single GaAs (GaAs) Microwave Monolithic Integrated Circuit
(MMIC) contains all active circuitry in the module. The MMIC contains onboard bias
circuitry as well as input and interstage matching circuits. The output match is
realized off-chip within the module package to optimize efficiency and power
performance into a 50 ohm load. This device is manufactured using Skyworks’ GaAs
Heterojunction Bipolar Transistor (HBT) process, which provides for all positive
voltage DC supply operation while maintaining high efficiency and good linearity.
Primary bias to the RM806 can be supplied directly from a three-cell nickel cadmium,
a single-cell lithium-ion battery, or any other suitable battery with output in the
3 to 4 volts range. Power down is accomplished by setting the low current reference
pin to zero volts. No external supply side switch is needed as typical “off” leakage is a
few microamperes with full primary voltage supplied from the battery.
•
•
•
•
•
High efficiency
Dual mode operation
Large dynamic range
6-pin package
(6 mm x 6mm x 1.5 mm)
Power down control
Applications
•
•
•
Digital cellular (TDMA)
Analog cellular (AMPS)
Wireless local loop (WLL)
Functional Block Diagram
VREF
(3)
Driver
Stage Bias
RFIN
(2)
Input
Match
VCC2
(4)
VCC1
(1)
Power
Stage Bias
DA
Inter
Stage
Match
PA
Output
Match
RFOUT
(5)
MMIC
MODULE
(6, 7)
GND
(6, 7)
GND
Data Sheet
© 2001, Skyworks Solutions, Inc., All Rights Reserved.
100602G
February 7, 2002
RM806
Electrical Specifications
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Electrical Specifications
The following tables list the electrical characteristics for the RM806 Power Amplifier. Table 1 lists
the absolute maximum rating for continuous operation. Table 2 lists the recommended operating
conditions for achieving the electrical performance listed in Table 4.
Table 1. Absolute Maximum Ratings(1)
Parameter
Symbol
Minimum
Nominal
Maximum
Unit
RF Input Power
Pin
—
3.0
8.0
dBm
Supply Voltage
Vcc
—
3.4
5.0(2)
Volts
Reference Voltage
Vref
—
3.1
3.3
Volts
Tc
–30
+25
+110
°C
Tstg
–55
—
+125
°C
Case Operating Temperature
Storage Temperature
NOTE(S):
(1)
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below
nominal value.
(2) Under pulsed TDMA modulated mode, operation at maximum supply voltage of 6.2 V up to 100 ms.
Table 2. Recommended Operating Conditions
Parameter
2
Symbol
Minimum
Nominal
Maximum
Unit
Supply Voltage
Vcc
3.0
3.4
4.2
Volts
Reference Voltage
Vref
3.0
3.1
3.3
Volts
Operating Frequency
Fo
824
836.5
849
MHz
Operating Temperature
To
–30
+25
+85
°C
Skyworks
100602G
February 7, 2002
RM806
Electrical Specifications
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Table 3. Electrical Specifications for TDMA / AMPS Nominal Operating Conditions(1)
Characteristics
Condition
Symbol Minimum(2)
Typical
Maximum(2)
Unit
Quiescent current
—
Iq
—
150.0
165.0
mA
Reference current
Po ≤ 32 dBm
Iref
—
6.3
7.0
mA
PA Off
—
—
2.0
25.0
uA
Gain–Analog
Po = 0 dBm
Po = 31 dBm
G
Gp
29.5
28.5
30.5
30.0
32.0
31.0
dB
dB
Gain–Digital
Po = 0 dBm
Po = 30 dBm
G
Gp
29.5
28.5
30.5
30.0
32.0
31.0
dB
dB
Power Added Efficiency
Analog Mode Po = 31 dBm
Digital Mode Po = 30 dBm
PAEa
PAEd
43.0
38.0
45.0
42.0
—
—
%
%
Adjacent Channel Power (3)
30 kHz Offset Po ≤ 30 dBm
60 kHz Offset Po ≤ 30 dBm
90 kHz Offset Po ≤ 30 dBm
ACP1
ACP2
ACP3
—
—
—
–30.5
–52.5
–62.0
–29.0
–50.0
–52.0
dBc
dBc
dBc
H2
H3
—
—
–50
–42
–43.0
–40.0
dBc
dBc
Leakage current
Harmonics
Second Po ≤ 31 dBm
Third Po ≤ 31 dBm
PA “Turn Off Time”
—
—
—
10
—
µs
PA “Turn On Time”
—
—
—
10
—
µs
Po ≤ 31 dBm
Np
—
–136.5
–133.0
dBm/Hz
Noise Figure
—
NF
—
5.5
7.0
dB
Input VSWR
—
VSWR
—
1.5:1
1.6:1
—
Stability (Spurious output)
5:1 VSWR
All phases
S
—
—
–60
dBc
Ruggedness—No damage
Po ≤ 31 dBm
Ru
—
—
8:1
VSWR
Noise Power in RX Band
869-894 MHz(4)
NOTE(S):
(1)
Vcc = +3.4 V, Vref = +3.1 V, Freq = 836.5 MHz, Tc = 25 °C.
Min/Max values indicate performance over process corners and conditions specified in note 1 above unless
otherwise detailed.
(3) Also meets same linearity for Po ≤ 28.5 dBm @ Vcc = +3.0 V.
(4) With NADC modulation applied.
(2)
100602G
February 7, 2002
Skyworks
3
RM806
Electrical Specifications
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Table 4. Electrical Specifications for TDMA / AMPS Nominal Operating Conditions(1)
Characteristics
Condition
Symbol Minimum(2)
Typical
Maximum(2)
Unit
Quiescent current
—
Iq
—
150.0
185.0
mA
Reference current
Po ≤ 32 dBm
Iref
—
6.3
7.6
mA
Leakage current(4)
PA Off
—
—
2.0
25.0
uA
Gain–Analog
Po = 0 dBm
Po = 31 dBm
G
Gp
27.5
26.0
30.5
30.0
33.0
33.0
dB
dB
Gain–Digital
Po = 0 dBm
Po = 30 dBm
G
Gp
27.5
26.0
30.5
30.0
32.5
32.5
dB
dB
Power Added Efficiency
Analog Mode Po = 31 dBm
Digital Mode Po = 30 dBm
PAEa
PAEd
41.0
37.0
45.0
42.0
—
—
%
%
Adjacent Channel Power (2)
30 kHz Offset Po ≤ 30 dBm
60 kHz Offset Po ≤ 30 dBm
90 kHz Offset Po ≤ 30 dBm
ACP1
ACP2
ACP3
—
—
—
–30.5
–52.5
–62.0
–27.0
–46.0
–50.0
dBc
dBc
dBc
H2
H3
—
—
–50
–42
–35.0
–35.0
dBc
dBc
Harmonics
Second Po ≤ 31 dBm
Third Po ≤ 31 dBm
PA “Turn Off Time”
—
—
—
10.0
30.0
µs
PA “Turn On Time”
—
—
—
10.0
30.0
µs
Po ≤ 31 dBm
Np
—
–136.5
–132.0
dBm/Hz
Noise Figure
—
NF
—
5.5
8.0
dB
Input VSWR
—
VSWR
—
1.5:1
2.0:1
—
Stability (Spurious output)(4)
5:1 VSWR
All phases
S
—
—
–60
dBc
Ruggedness—No damage(4)
Po ≤ 31 dBm
Ru
—
—
8:1
VSWR
Noise Power in RX Band
869-894 MHz(3)
NOTE(S):
1. Min/Max values indicate performance over process corners and conditions specified in note (1) below unless
otherwise detailed.
(1) Per Table 3 with Vcc = +3.4 V.
(2) Also meets same linearity for Po ≤ 28.5 dBm @ Vcc = +3.0 V and as further specified in note (1) above.
(3) With NADC modulation applied. Tc = 25 °C
(4)
Tc = 25 °C
4
Skyworks
100602G
February 7, 2002
RM806
Characterization Data
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Characterization Data
The following graphs illustrate characteristics for a typical RM806 Power Amplifier. The amplifier
was selected by characterizing a group of devices and selecting a part having average electrical
performance both at nominal and worst case. Figures 1 through 5 illustrate the digital signal
characteristics and Figures 6 through 9 illustrate the analog characteristics for the RM806.
Figure 1. Digital Gain vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V
35.0
32.5
Gain (dB)
30.0
27.5
25.0
22.5
20.0
0
5
10
15
Output Power (dBm)
20
25
30
Legend
‹
„
Œ
100602G
February 7, 2002
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
‹
„
Œ
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Skyworks
‹
„
Œ
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
5
RM806
Characterization Data
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Figure 2. Digital Power Added Efficiency vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V
50
Digital PAE (%)
40
30
20
10
0
0
5
10
15
20
Output Power (dBm)
25
30
Figure 3. Digital Adjacent Channel Power vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V, 30 kHz Offset
0
ACPR1 (dBc)
-10
-20
-30
-40
-50
0
5
10
15
20
25
30
Output Power (dBm)
Legend
‹
„
Œ
6
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
‹
„
Œ
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Skyworks
‹
„
Œ
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
100602G
February 7, 2002
RM806
Characterization Data
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Figure 4. Digital Alternate1 Channel Power vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V, 60 kHz Offset
-30
ACPR2 (dBc)
-40
-50
-60
-70
-80
0
5
10
15
20
25
30
Output Power (dBm)
Figure 5. Digital Alternate2 Channel Power vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V, 90 kHz Offset
-30
ACPR3 (dBc)
-40
-50
-60
-70
-80
0
5
10
15
20
25
30
Output Power (dBm)
Legend
‹
„
Œ
100602G
February 7, 2002
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
‹
„
Œ
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Skyworks
‹
„
Œ
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
7
RM806
Characterization Data
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Figure 6. Analog Gain vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V
35.0
32.5
Gain (dB)
30.0
27.5
25.0
22.5
20.0
0
5
10
15
20
Output Power (dBm)
25
30
25
30
Figure 7. Analog Power Added Efficiency vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V
50
Analog PAE (%)
40
30
20
10
0
0
5
10
15
20
Output Power (dBm)
Legend
‹
„
Œ
8
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
‹
„
Œ
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Skyworks
‹
„
Œ
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
100602G
February 7, 2002
RM806
Characterization Data
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Figure 8. Analog Second Order Harmonic vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V
Second Order Analog Harmonics (dBc)
0
-10
-20
-30
-40
-50
-60
-70
-80
0
5
10
15
20
Output Power (dBm)
25
30
Figure 9. Analog Third Order Harmonic vs. Output Power
Vref = 3.1 V, Vcc = 3.4 V
0
Third Order Analog Harmonics (dBc)
-10
-20
-30
-40
-50
-60
-70
-80
0
5
10
15
20
Output Power (dBm)
25
30
Legend
‹
„
Œ
100602G
February 7, 2002
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
‹
„
Œ
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Skyworks
‹
„
Œ
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
9
RM806
Evaluation Board Description
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Evaluation Board Description
The evaluation board is a platform for testing and interfacing design circuitry. To accommodate the
interface testing of the RM806, the evaluation board schematic and diagrams are included for
preliminary analysis and design. Figure 10 shows the basic schematic of the board for the 824 MHz
to 849 MHz range. Figure 11 illustrates the board layout.
Figure 10. Evaluation Board Schematic
22 pF
220 pF
C5
RFIN
C1
1
6
2
5
RM806
3
VREF
GND
18 pF
RFOUT
4
C3
Vcc
GND
GND
150 pF
39 pF
4.7uF
C4
C6
GND
C2
GND
GND
Notes:
1) Bottom of the package [pin 7] is GND and must be soldered.
2) Input and Output DC Blocking caps are required for TDMA Cellular
3) All external components must be located no greater than 90 mils [2.29mm] from edge of Module.
4) Vcc line should have ground layer isolation from RFIN and VREF
5) Application PCB and Production Test PCB require the same schematic.
100602_005
Figure 11. Evaluation Board Diagram
C5
J1
C3
C1
C6
C2
RF IN
C4
J2
RF OUT
SKYWORKS
Notes:
1) C1 and C3 must be inserted.
GND
Vcc
Vref
GND
6x6_ENG_EVAL_BD
09-10-99
J3
100602_004
10
Skyworks
100602G
February 7, 2002
RM806
Package Dimensions and Pin Description
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Package Dimensions and Pin Description
The RM806 is a multi-layer laminate base, overmold encapsulated modular package designed for
surface mount solder attachment to a printed circuit board.
Figure 12. RM806 Package Drawing
2.870 (2x)
1.981 (2x)
1.219 (2x)
(PIN 1)
1
6
6
(PIN 7)
2.500
(4x)
2
5
3
4
5.92/6.15
2
5
3
4
TOP VIEWS
5.92/6.15
.762
R .500 TYP
NOTE: Solder mask pattern pad layout as seen
from top looking through package.
1.500 TYP
All dimensions in millimeters.
FRONT VIEW
100602_002
Table 5. Pin Description
Pin #
Function
1
VCC1(1)
2
RF Input
3
VREF
4
VCC2(1)
5
RF Output
6
GND
(7) GND PAD
GND(2)
NOTE(S):
(1)
(2)
All supply pins may be connected together at the supply.
Package underside is GND.
100602G
February 7, 2002
Skyworks
11
RM806
Package and Handling Information
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Package and Handling Information
Because this device package is sensitive to moisture absorption, it is baked and vacuum packed
prior to shipment. Instructions on the shipping container label regarding exposure to moisture after
the container seal is broken must be followed. Otherwise, problems related to moisture absorption
may occur when the part is subjected to high temperature during solder assembly. If the part is
attached in a reflow oven, the temperature ramp rate should not exceed 5 °C per second; Maximum
temperature should not exceed 225 °C. If the part is manually attached, precaution should be taken
to insure that the part is not subjected to a temperature exceeding 225 °C for more than 10 seconds.
Care must be taken when attaching this product, whether it is done manually or in a production
solder reflow environment. For additional details on both attachment techniques, precautions, and
handling procedures recommended by Skyworks, please refer to Application Note: Solder Reflow,
Document Number 101536.
Production quantities of this product are shipped in the standard tape-and-reel format. For
packaging details, refer to Application Note: Tape and Reel, Document Number 101568.
Figure 13. Typical Case Markings
SKYWORKS
Pin 1 Identifier
RM806-NN
NXXXXX.XX
YYWW MEX
Manufacturing Part Number-Revision Number
Lot Number
YY = Manufacture Year
WW = Week Package Sealed
MEX = Country Code
100602_006
12
Skyworks
100602G
February 7, 2002
RM806
Electrostatic Discharge Sensitivity
Power Amplifier Module for TDMA AMPS (824–849 MHz)
Electrostatic Discharge Sensitivity
The RM806 is a Class I device. Figure 14 lists the Electrostatic Discharge (ESD) immunity level
for each pin of the RM806 product. The numbers in Figure 14 specify the ESD threshold level for
each pin where the I-V curve between the pin and ground starts to show degradation. The ESD
testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body
Model. Since 2000 volts represents the maximum measurement limit of the test equipment used,
pins marked > 2000 V pass 2000V ESD stress.
Figure 14. ESD Sensitivity Areas
> + 2000 V
< – 2000 V
1 Vcc1
GND 6
> + 2000 V
< – 1500 V
2 RFIN
RFOUT 5
> + 2000 V
< – 2000 V
> + 2000 V
< – 2000 V
3 Vref
Vcc2 4
> + 2000 V
< – 2000 V
100602_007
Various failure criteria can be utilized when performing ESD testing. Many vendors employ
relaxed ESD failure standards which fail devices only after “the pin fails the electrical specification
limits” or “the pin becomes completely non-functional”. Skyworks employs most stringent criteria,
fails devices as soon as the pin begins to show any degradation on a curve tracer.
To avoid ESD damage, latent or visible, it is very important the Class-1 ESD handling precautions
listed in Table 6 be used in the product assembly and test areas follow.
Table 6. Precautions for GaAs ICs with ESD Thresholds Greater Than 200V But Less Than 2000V
Personnel Grounding
Wrist Straps
Conductive Smocks, Gloves and Finger Cots
Antistatic ID Badges
Facility
Relative Humidity Control and Air Ionizers
Dissipative Floors (less than 109 Ω to GND)
Protective Workstation
Dissipative Table Tops
Protective Test Equipment (Properly Grounded)
Grounded Tip Soldering Irons
Conductive Solder Suckers
Static Sensors
Protective Packaging & Transportation
Bags and Pouches (Faraday Shield)
Protective Tote Boxes (Conductive Static Shielding)
Protective Trays
Grounded Carts
Protective Work Order Holders
100602G
February 7, 2002
Skyworks
13
RM806
Electrostatic Discharge Sensitivity
Power Amplifier Module for TDMA AMPS (824–849 MHz)
14
Skyworks
100602G
February 7, 2002
Ordering Information
Model Number
Manufacturing
Part Number
Product Revision
Package
Operating Temperature
RM806
RM806–14
14
6X6LM–6
–30 °C to +85 °C
Level
Date
Revision History
Revision
Description
A
March 2000
Initial Release
B
March 2000
Updated Data Tables
C
May 2000
D
February 2001
E
March 2001
Revised: Table 3; Figure 12; Packaging & Handling
Information; Manufacturing Part Number
F
September 2001
Revise: ESD data; Product Revision from 13 to 14.
G
February 7, 2002
Revise: Table 1 footnote 2.
Updated Characterization Data
Add Table 4; Revise Evaluation Board Information;
Soldering & Temperature Guidelines; Revise Figures 13, 14
& Table 3.
© 2002, Skyworks Solutions, Inc. All Rights Reserved.
Information in this document is provided in connection with Skyworks Solutions, Inc. ("Skyworks") products. These materials are
provided by Skyworks as a service to its customers and may be used for informational purposes only. Skyworks assumes no
responsibility for errors or omissions in these materials. Skyworks may make changes to its products, specifications and product
descriptions at any time, without notice. Skyworks makes no commitment to update the information and shall have no responsibility
whatsoever for conflicts, incompatibilities, or other difficulties arising from future changes to its products and product descriptions.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as
may be provided in Skyworks' Terms and Conditions of Sale for such products, Skyworks assumes no liability whatsoever.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING
TO SALE AND/OR USE OF SKYWORKS™ PRODUCTS INCLUDING WARRANTIES RELATING TO FITNESS FOR A
PARTICULAR PURPOSE, MERCHANTABILITY, PERFORMANCE, QUALITY OR NON-INFRINGEMENT OF ANY PATENT,
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OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS.
SKYWORKS SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES,
INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS THAT MAY RESULT FROM THE USE OF THESE
MATERIALS.
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damages resulting from such improper use or sale.
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Product names or services listed in this publication are for identification purposes only, and may be trademarks of third parties. Thirdparty brands and names are the property of their respective owners.
Additional information, posted at www.skyworksinc.com, is incorporated by reference.
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