ETC RM912-15

RM912
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
(824–849 MHz)
Distinguishing Features
The RM912 dual-mode Code Division Multiple Access (CDMA)/Advanced Mobile
Phone Service (AMPS) Power Amplifier is a fully matched 6-pin surface mount
module designed for mobile units operating in the 824-849 MHz cellular bandwidth.
This device meets stringent IS95 CDMA linearity requirements to beyond 28 dBm
output power and can be driven to power output levels beyond 31 dBm for high
efficiency FM mode operation. A single GaAs Microwave Monolithic Integrated Circuit
(MMIC) contains all active circuitry in the module. The MMIC contains on-board bias
circuitry, as well as input and interstage matching circuits. The output match is
realized off-chip within the module package to optimize efficiency and power
performance into a 50 Ω load. This device is manufactured with Conexant’s Gallium
Arsenide (GaAs) heterojunction bipolar transistor (HBT) process that provides for all
positive voltage DC supply operation while maintaining high efficiency and good
linearity. Primary bias to the RM912 can be supplied directly from a three cell
nickel-cadmium, single cell lithium-ion, or other suitable battery with an output in the
3-4 volt range. Power down is accomplished by setting the voltage on the low current
reference pin to zero volts. No external supply side switch is needed as typical “off”
leakage is a few microamperes with full primary voltage supplied from the battery.
•
•
•
•
•
•
•
Low voltage positive bias supply
Good linearity
High efficiency
Dual mode operation
Large dynamic range
6-pin package
(6 x 6 x 1.5 mm)
Power down control
Applications
•
•
•
Digital cellular (CDMA)
Analog cellular (AMPS)
Wireless local loop
Functional Block Diagram
VREF
(3)
Driver
Stage Bias
RF
Input
(2)
Input
Match
VCC2
(4)
VCC1
(1)
Power
Stage Bias
Inter
Stage
Match
DA
PA
Output
Match
RF
Output
(5)
MMIC
MODULE
(6, 7)
GND
Data Sheet
© 2001, Conexant Systems, Inc., All Rights Reserved.
(6, 7)
GND
100635J
October 2001
RM912
Electrical Specifications
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Electrical Specifications
The following tables list the electrical characteristics of the RM912 Power Amplifier. Table 1 lists
the absolute maximum ratings for continuous operation. Table 2 lists the recommended operating
conditions for achieving the electrical performance listed in Table 3. Table 3 lists the electrical
performance of the RM912 Power Amplifier over the recommended operating conditions.
Table 1. Absolute Maximum Ratings(1)
Parameter
Symbol
Minimum
Nominal
Maximum
Unit
RF Input Power
Pin
—
3.0
6.0
dBm
Supply Voltage
Vcc
—
3.4
6.0
Volts
Reference Voltage
Vref
—
3.0
3.3
Volts
Tc
–30
25
+110
°C
Tstg
–55
—
+125
°C
Case Operating Temperature
Storage Temperature
NOTE(S):
(1)
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below
nominal value.
Table 2. Recommended Operating Conditions
Parameter
2
Symbol
Minimum
Nominal
Maximum
Unit
Supply Voltage
Vcc
3.2
3.4
4.2
Volts
Reference Voltage
Vref
2.9
3.0
3.1
Volts
Operating Frequency
Fo
824.0
836.5
849.0
MHz
Operating Temperature
To
–30
+25
+85
°C
Conexant
100635J
RM912
Electrical Specifications
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Table 3. Electrical Specifications for CDMA / AMPS Nominal Operating Conditions(1)
Characteristics
Condition
Symbol
Minimum
Typical
Maximum
Unit
Quiescent current
Vref = 3.0 V
Vref = 2.9 V
Iq
Iq
—
—
100.0
80.0
—
—
mA
mA
Leakage current
Vref = 0 V
Vcc = 3.4 V
Ilk
—
—
4.0
µA
Gain–Digital
Po = 0 dBm
Po = 28 dBm
G
Gp
26.0
26.0
28.0
29.0
31.0
32.5
dB
dB
Gain–Analog
Po = 31 dBm
Gp
26.0
28.0
31.9
dB
Analog Mode
Digital Mode
Po = 31 dBm
Po = 28 dBm
PAEa
PAEd
42.0
31.0
45.0
34.0
—
—
%
%
Adjacent Channel Power(2)
885 kHz Offset
1980 kHz Offset
Po ≤ 28 dBm
Po ≤ 28 dBm
ACP1
ACP2
—
—
–50.0
–58.0
–47.0
–58.0
dBc
dBc
Po ≤ 31 dBm
Po ≤ 31 dBm
AFo2
AFo3
—
—
–42.0
–45.0
–33.0
–35.0
dBc
dBc
Po ≤ 28 dBm
RxBN
—
–134.0
–133.0
dBm/Hz
Noise Figure
—
NF
—
6.0
—
dB
Input Voltage Standing Wave Ratio
—
VSWR
—
1.4:1
1.9:1
—
Stability (Spurious output)
5:1 VSWR
All phases
S
—
—
–60.0
dBc
Ruggedness—No damage
Po ≤ 31 dBm
Ru
10:1
—
—
VSWR
Power Added Efficiency
Harmonic Suppression
Second
Third
Noise Power in RX Band
869-894 MHz
NOTE(S):
(1)
(2)
Vcc = +3.4 V, Vref = +3.0 V, Freq = 836.5 MHz, Tc = 25 °C, unless otherwise specified.
ACP is specified per IS95 as the ratio of the total in-band power (1.23 MHz BW) to adjacent power in a 30 kHz BW.
100635J
Conexant
3
RM912
Electrical Specifications
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Table 4. Electrical Specifications Limits for CDMA / AMPS Recommended Operating Conditions(1)
Characteristics
Condition
Symbol
Minimum
Maximum
Unit
Quiescent current
Vref = 3.0 V
Iq
—
140.0
mA
Gain–Digital
Po = 0 dBm
Po = 28 dBm
G
Gp
25.0
24.0
31.5
34.0
dB
dB
Gain—Analog
Po = 31dBm
Gp
23.0
33.4
dB
Po = 31 dBm
Po = 28 dBm
PAEa
PAEd
40.0
30.0
—
—
%
%
Po ≤ 28 dBm
Po ≤ 28 dBm
ACP1
ACP2
—
—
–44.0
–56.0
dBc
dBc
Po ≤ 31 dBm
Po ≤ 31 dBm
AFo2
AFo3
—
—
–30.0
–30.0
dBc
dBc
Po ≤ 28
dBm
RxBN
—
–131.0
dBm/Hz
—
VSWR
—
2:1
—
Power Added Efficiency
Analog Mode
Digital Mode
Adjacent Channel
Power(2)
885 kHz Offset
1980 kHz Offset
Harmonic Suppression
Second
Third
Noise Power in RX Band
869—894 MHz
Input Voltage Standing Wave Ratio
NOTE(S):
(1)
(2)
4
Per Table 2.
ACP is specified per IS95 as the ratio of the total in-band power (1.23 MHz BW) to adjacent power in a 30 kHz BW.
Conexant
100635J
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Characterization Data
The following charts illustrate the characteristics of a typical RM912 Power Amplifier tested in the
evaluation board described in the following section. The amplifier was selected by characterizing a
group of devices and choosing a part with average electrical performance at both nominal and
worst case (limit) conditions. Figures 1 through 4 illustrate the digital signal characteristics and
Figures 5 through 8 illustrate the analog characteristics of the RM912
.
Figure 1. Digital Gain vs. Output Power
32.50
Vref = 3.0V, Vcc = 3.4V
Gain (dB)
30.00
27.50
25.00
22.50
0.00
5.00
10.00
15.00
Output Pow er (dBm)
20.00
25.00
30.00
Legend
◆
■
▲
100635J
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
◆
■
▲
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Conexant
◆
■
▲
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
5
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 2. Digital Adjacent Channel Power (ACP1) vs. Output Power
-20.00
Vref = 3.0V, Vcc = 3.4V, 885 kHz Offset
ACP1 (dBc)
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
20.00
25.00
30.00
Output Pow er (dBm )
Figure 3. Digital Adjacent Channel Power (ACP2) vs. Output Power
-20.00
Vref = 3.0V, Vcc = 3.4V, 1980 kHz Offset
ACP2 (dBc)
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
0.00
5.00
10.00
15.00
Output Pow er (dBm )
Legend
◆
■
▲
6
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
◆
■
▲
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Conexant
◆
■
▲
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
100635J
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 4. Digital Power Added Efficiency vs. Output Power
40.00
Vref = 3.0V, Vcc = 3.4V
35.00
DPAE (%)
30.00
25.00
20.00
15.00
10.00
5.00
0.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Pow er (dBm )
Figure 5. Analog Gain vs. Output Power
32.50
Vref = 3.0V, Vcc = 3.4V
Gain (dB)
30.00
27.50
25.00
22.50
0.00
5.00
10.00
15.00
20.00
Output Pow er (dBm )
25.00
30.00
Legend
◆
■
▲
100635J
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
◆
■
▲
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Conexant
◆
■
▲
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
7
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 6. Analog Power Added Efficiency vs. Output Power
Vref = 3.0V, Vcc = 3.4V
50.00
45.00
40.00
PAE (%)
35.00
30.00
25.00
20.00
15.00
10.00
5.00
0.00
0.00
5.00
10.00
15.00
20.00
Output Pow er (dBm )
25.00
30.00
Figure 7. Analog Second Order Harmonic Suppression
Vref = 3.0V, Vcc = 3.4V
0.00
-10.00
AFo2 (dBc)
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
10.00
15.00
20.00
25.00
30.00
Output Pow er (dBm )
Legend
◆
■
▲
8
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
◆
■
▲
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Conexant
◆
■
▲
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
100635J
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 8. Analog Third Order Harmonic Suppression
0.00
Vref = 3.0V, Vcc = 3.4V
-10.00
AFo3 (dBc)
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
10.00
15.00
20.00
25.00
30.00
Output Pow er (dBm )
Legend
◆
■
▲
100635J
824 MHz @ –30 °C
837 MHz @ –30 °C
849 MHz @ –30 °C
◆
■
▲
824 MHz @ +25 °C
837 MHz @ +25 °C
849 MHz @ +25 °C
Conexant
◆
■
▲
824 MHz @ +85 °C
837 MHz @ +85 °C
849 MHz @ +85 °C
9
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 9. Digital Gain vs. Output Power
Digital Gain at 28 dBm output power (dB)
40.00
COLD
R OOM T E MPER AT U R E
HOT
35.00
824 MHz
836.5 MHz
849 MHz
30.00
25.00
20.00
15.00
10.00
5.00
0.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
ACPR1 at 28 dBm output power (dBc)
Figure 10. Digital Adjacent Channel Power (ACP1) vs. Output Power
0.00
COLD
R OOM T EMPER AT U R E
-10.00
824 MHz
836.5 MHz
849 MHz
HOT
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
10
Conexant
100635J
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 11. Digital Adjacent Channel Power (ACP2) vs. Output Power
0.00
ACPR2 at 28 dBm output power (dBc)
COLD
R OOM T EMPE R AT UR E
HOT
-10.00
824 MHz
836.5 MHz
849 MHz
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
Analog Gain at 31 dBm Output Power (dB)
Figure 12. Analog Gain vs. Output Power
40.00
COLD
R OOM T EMPER AT U R E
35.00
824 MHz
836.5 MHz
849 MHz
HOT
30.00
25.00
20.00
15.00
10.00
5.00
0.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
100635J
Conexant
11
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 13. Analog Second Order Harmonic Suppression
0.00
AFo2 at 31 dBm output power (dBc)
COL D
R OOM T EMP ER AT UR E
824 MHz
-10.00
HOT
836.5 MHz
849 MHz
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
Figure 14. Analog Third Order Harmonic Suppression
AFo3 at 31 dBm output power (dBc)
0.00
COLD
HOT
R OOM T E MPER AT U R E
-10.00
824 MHz
836.5 MHz
849 MHz
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
12
Conexant
100635J
RM912
Characterization Data
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Figure 15. Noise Figure Variation Over Recommended Operating Conditions
10.00
COLD
R OOM T EMPER AT U R E
HOT
9.00
824 MHz
836.5 MHz
849 MHz
Noise Figure (dB)
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Tem perature
Figure 16. Voltage Standing Wave Ratio Variation Over Recommended Operating Conditions
2.00
COLD
R OOM T EMPE R AT UR E
HOT
1.80
824 MHz
1.60
836.5 MHz
849 MHz
VSWR (:1)
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
3.20V
3.40V
4.20V
-30C
-30C
-30C
25C
25C
25C
85C
85C
85C
Collector Voltage Case Temperature
100635J
Conexant
13
RM912
Evaluation Board Description
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Evaluation Board Description
The evaluation board is a platform for testing and interfacing design circuitry. To accommodate the
interface testing of the RM912, the evaluation board schematic and diagrams are included for
preliminary analysis and design. Figure 17 shows the basic schematic of the board for the 824 MHz
to 849 MHz range. Figure 18 illustrates the board layout.
Figure 17. Evaluation Board Schematic
1
VCC1
2
RFIN
3
VREF
GND 6
C1
RFIN
RFOUT
RFOUT 5
VCC2 4
C2
C3
C4
Vref
Vcc
100635_003
Figure 18. Evaluation Board Assembly Diagram
100635_004
14
Conexant
100635J
RM912
Package Dimensions and Pin Descriptions
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Package Dimensions and Pin Descriptions
The RM912 is a multi-layer laminate base, overmold encapsulated modular package designed for
surface mount solder attachment to a printed circuit board.
Figure 19. RM912 Package Drawing
2.870 (2x)
1.981 (2x)
1.219 (2x)
(PIN 1)
1
6
6
(PIN 7)
2.500
(4x)
2
5
3
4
5.92/6.15
2
5
3
4
TOP VIEWS
.762 6x
R .500 TYP
5.92/6.15
NOTE: Solder mask pattern pad layout as seen
from top looking through package.
1.500 TYP
All dimensions are in millimeters.
FRONT VIEW
100635_002
Table 5. Pin Description
Pin #
Function
1
VCC1(1)
2
RF Input
3
VREF
4
VCC2(1)
5
RF Output
6
GND
GND PAD
GND(2)
NOTE(S):
(1)
(2)
100635J
All supply pins may be connected together at the supply.
Package underside is GND.
Conexant
15
RM912
Package and Handling Information
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Package and Handling Information
Because this device package is sensitive to moisture absorption, it is baked and vacuum packed
prior to shipment. Instructions on the shipping container label regarding exposure to moisture after
the container seal is broken must be followed. Otherwise, problems related to moisture absorption
may occur when the part is subjected to high temperature during solder assembly. If the part is
attached in a reflow oven, the temperature ramp rate should not exceed 5 °C per second. Maximum
temperature should not exceed 225 °C and the time spent at a temperature exceeding 210 °C should
be limited to less than 10 seconds. If the part is manually attached, precaution should be taken to
insure that the part is not subjected to a temperature exceeding 300 °C for more than 10 seconds.
Care must be taken when attaching this product, whether it is done manually or in a production
solder reflow environment. For additional details on both attachment techniques, precautions, and
handling procedures recommended by Conexant, please refer to Application Note: Solder Reflow,
Document Number 101536.
Production quantities of this product are shipped in the standard tape-and-reel format. For
packaging details, refer to Application Note: Tape and Reel, Document Number 101568.
Figure 20. Typical Case Markings
Pin 1
Identifier
CONEXANT
RM912-NN
NXXXXX.XX
YYWW MEX
Manufacturing Part Number-Revision Number
Lot Number
YY = Manufacture Year
WW = Week Package Sealed
MEX = Country Code
100635_006
16
Conexant
100635J
RM912
Electrostatic Discharge Sensitivity
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
Electrostatic Discharge Sensitivity
The RM912 is a Class I device. Figure 21 lists the Electrostatic Discharge (ESD) immunity level
for each pin of the RM912 product. The numbers in Figure 21 specify the ESD threshold level for
each pin where the I-V curve between the pin and ground starts to show degradation. The ESD
testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body
Model. Since 2000 volts represents the maximum measurement limit of the test equipment used,
pins marked > 2000 V pass 2000V ESD stress.
Figure 21. ESD Sensitivity Areas
> +1950 V
< -2000 V VCC1
1
6
GND
> +2000 V
RFIN
< -2000 V
2
5
> +2000 V
RFOUT < -2000 V
> +2000 V
VREF
< -2000 V
3
4
VCC2
> +1400 V
< -2000 V
100635_007
Various failure criteria can be utilized when performing ESD testing. Many vendors employ
relaxed ESD failure standards which fail devices only after “the pin fails the electrical specification
limits” or “the pin becomes completely non-functional”. Conexant employs most stringent criteria,
fails devices as soon as the pin begins to show any degradation on a curve tracer.
To avoid ESD damage, latent or visible, it is very important the Class-1 ESD handling precautions
listed in Table 6 be used in the product assembly and test areas follow.
Table 6. Precautions for GaAs ICs with ESD Thresholds Greater Than 200V But Less Than 2000V
100635J
Personnel Grounding
Wrist Straps
Conductive Smocks, Gloves and Finger Cots
Antistatic ID Badges
Facility
Relative Humidity Control and Air Ionizers
Dissipative Floors (less than 109 Ω to GND)
Protective Workstation
Dissipative Table Tops
Protective Test Equipment (Properly Grounded)
Grounded Tip Soldering Irons
Conductive Solder Suckers
Static Sensors
Protective Packaging & Transportation
Bags and Pouches (Faraday Shield)
Protective Tote Boxes (Conductive Static Shielding)
Protective Trays
Grounded Carts
Protective Work Order Holders
Conexant
17
RM912
Electrostatic Discharge Sensitivity
Power Amplifier Module, 3–4 Volts, for CDMA/AMPS
18
Conexant
100635J
Ordering Information
Model Number
Manufacturing Part Number
Product Revision
Package
Operating Temperature
RM912
RM912–15
15
6x6LM–6
–30 °C to +85 °C
Revision History
Revision
Level
Date
Description
A
March 2000
Preliminary Information
B
March 2000
Updated Preliminary Information
C
June 2000
Added Characterization Data, Released
D
July 2000
Updated ESD Data
E
July 2000
Preprint Update
F
August 2000
Web Site Update
G
August 2000
Web Format Corrections
H
December 2000
I
March 2001
J
October 2001
Add: Solder Reflow, Temp. Guidelines;
Revise: Figure 21; Revise Ordering Information
Revise: Table 3, graphs
Revise: Tables 3, 4; Figures 18, 20, 21
References:
1.
2.
Application Note: Solder Reflow, Document Number 101536
Application Note: Tape and Reel, Document Number 101568
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