ETC 2SK2924

Power F-MOS FETs
2SK2924
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 100mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 35ns
● No secondary breakdown
unit: mm
4.6±0.2
+0.5
13.7–0.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
Symbol
Unit
VDSS
350
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±10
A
Pulse
IDP
±20
A
EAS*
250
mJ
Avalanche energy capacity
*
Ratings
Drain to Source breakdown voltage
Drain current
Allowable power
TC = 25°C
dissipation
Ta = 25°C
50
PD
2.6±0.1
1.2±0.15
1.45±0.15
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
3.0±0.2
15.0±0.3
■ Applications
2.9±0.2
4.1±0.2 8.0±0.2
Solder Dip
φ3.2±0.1
9.9±0.3
7
1 2 3
1: Gate
2: Drain
3: Source
TO-220E Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 8mH, IL = 5A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 280V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 5A
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 5A
Diode forward voltage
VDSF
IDR = 10A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
V
350
2
0.34
5
5
V
0.4
Ω
3
S
−1.5
V
1400
pF
290
pF
100
pF
Turn-on time (delay time)
td(on)
20
ns
Rise time
tr
VGS = 10V, ID = 5A
35
ns
Turn-off time (delay time)
td(off)
VDD = 100V, RL = 20Ω
180
ns
Fall time
tf
50
ns
1
Power F-MOS FETs
2SK2924
TC=25˚C
7.0V
6.0V
6
4
5.0V
2
4.5V
0
VDS=10V
Ta=25˚C
7
6
5
4
3
2
1
0
0
4
8
12
16
20
24
0
2.5
Drain to source voltage VDS (V)
7.5
Drain current ID (A)
5
4
3
2
7.5
5.0
2.5
1
0
0
15
20
300
200
100
0
0
25
2.5
30
0
Gate to source voltage VGS (V)
1
2
3
4
5
6
7
8
7.5
f=1MHz
Ta=25˚C
Ciss
103
Coss
102
Crss
10
25
50
75
Rth(t)  t
200
td(off)
150
100
tf
50
tr
td(on)
0
0
2
4
6
8
Drain current ID (A)
10
Thermal resistance Rth(t) (˚C/W)
VDD=100V
Ta=25˚C
Note: Rth was measured at Ta=25˚C
and under natural convection.
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
10
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
100
Drain to source voltage VDS (V)
102
250
10.0
104
0
Gate to source voltage VGS (V)
td(on), tr, tf, td(off)  ID
5.0
Ciss, Coss, Crss  VDS
VDS=10V
Ta=25˚C
Ta=25˚C
ID=5A
10
400
Drain current ID (A)
10.0
5
Ta=25˚C
VGS=10V
500
ID  VGS
6
0
Switching time td(on),tr,tf,td(off) (µs)
10.0
600
Drain current ID (A)
RDS(on)  VGS
Drain to source ON-resistance RDS(on) (Ω)
5.0
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Drain current ID (A)
8
2
RDS(on)  ID
8
VGS=10.0V
Forward transfer admittance |Yfs| (S)
10
| Yfs |  ID
Drain to source ON-resistance RDS(on) (mΩ)
ID  VDS
1
Time t (s)
10
102
103