BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code BBY 52-03W I (white) Q62702-B664 Q62702- Pin Configuration 1=C Package 2=A - SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 7 V Forward current IF 20 mA Operating temperature range Top - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 °C Feb-04-1997 BBY 52-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 6 V, TA = 25 °C - - 10 VR = 6 V, TA = 65 °C - - 200 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 1.4 1.85 2.2 VR = 2 V, f = 1 MHz - 1.5 - VR = 3 V, f = 1 MHz - 1.35 - VR = 4 V, f = 1 MHz 0.85 1.15 1.45 Capacitance ratio CT1/CT4 VR = 1 V, VR = 4 V, f = 1 MHz Series resistance 1.1 1.6 2.1 Ω rs VR = 1 V, f = 1 GHz Case capacitance - - 0.9 1.8 CC f = 1 MHz Series inductance chip to ground Ls Semiconductor Group 2 pF - 0.12 - - 1.8 - nH Feb-04-1997 BBY 52-03W Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR Semiconductor Group 3 Feb-04-1997