MMBF0202PLT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space http://onsemi.com 300 mAMPS 20 VOLTS RDS(on) = 1.4 P–Channel 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 70°C – Pulsed Drain Current (tp ≤ 10 µs) Symbol Value Unit VDSS 20 Vdc VGS ± 20 Vdc ID ID IDM 300 240 750 Total Power Dissipation @ TA = 25°C (Note 1.) PD 225 Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C RθJA 625 °C/W TL 260 °C Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 1 mAdc 2 mW MARKING DIAGRAM 3 SOT–23 CASE 318 STYLE 21 1 P3 W 2 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. W = Work Week PIN ASSIGNMENT Drain 3 1 2 Source Gate ORDERING INFORMATION Device Package Shipping MMBF0202PLT1 SOT–23 3000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 1 1 Publication Order Number: MMBF0202PLT1/D MMBF0202PLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 – – Vdc – – – – 1.0 10 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) µAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS – – ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) rDS(on) – – 0.9 2.0 1.4 3.5 gFS – 600 – mMhos pF ON CHARACTERISTICS (Note 1.) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss – 50 – Output Capacitance (VDS = 5.0 V) Coss – 45 – Transfer Capacitance (VDG = 5.0 V) Crss – 20 – td(on) – 2.5 – tr – 1.0 – td(off) – 16 – tf – 8.0 – QT – 2700 – pC IS – – 0.3 A Pulsed Current ISM – – 0.75 Forward Voltage (Note 2.) VSD – 1.5 – SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = –15 Vdc, RL = 75 Ω, Ω ID = 200 mAdc mAdc, VGEN = –10 10 V, RG = 6.0 Ω) Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 V MMBF0202PLT1 TYPICAL ELECTRICAL CHARACTERISTICS 1.0 1.0 5V 0.8 I D , DRAIN CURRENT (AMPS) 25°C 125°C 0.6 0.4 0.2 0 0 2 6 4 ON-RESISTANCE (OHMS) 0.6 0.4 3V 0.2 0 1 VGS = 4.5 V 1 VGS = 10 V 100 200 300 ID, DRAIN CURRENT (AMPS) 500 400 5 4 200 mA 3 2 50 mA 1 0 0 -5 -10 -15 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -20 Figure 4. On–Resistance versus Gate–to–Source Voltage 16 1.20 1.15 ID = 200 mA VGS(th) , NORMALIZED VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Drain Current 2160 10 8 VDS = 10 V 6 VDS = 16 V 590 4 ID = 250 µA 1.10 1.05 1.00 0.95 0.90 0.85 2 0 0 4 Figure 2. On–Region Characteristics 2 12 3 Figure 1. Transfer Characteristics 3 14 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4 0 4V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 0 VGS = 10, 9, 8, 7, 6 V 0.8 0 8 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) I D , DRAIN CURRENT (AMPS) TC = -55°C 230 690 2270 0.80 -50 3500 Qg, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge -25 0 50 75 25 TEMPERATURE (°C) 100 125 Figure 6. Threshold Voltage Variance Over Temperature http://onsemi.com 3 150 MMBF0202PLT1 TYPICAL ELECTRICAL CHARACTERISTICS 1.30 140 120 1.20 1.15 C, CAPACITANCE (pF) VGS = 4.5 V @ 50 mA 1.10 1.05 VGS = 10 V @ 200 mA 1.00 0.95 0.90 0.85 0.80 -50 100 80 60 Ciss 40 Coss 20 -25 0 25 50 75 100 125 0 150 Crss 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. On–Resistance versus Junction Temperature Figure 8. Capacitance 10 SOURCE CURRENT (AMPS) RDS(on) , NORMALIZED (OHMS) 1.25 1.0 TJ = 150°C 0.1 -55°C 25°C 0.01 0.001 0 3 4 1 2 SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS) Figure 9. Source–to–Drain Forward Voltage versus Continuous Current (IS) http://onsemi.com 4 4.5 20 MMBF0202PLT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 POWER DISSIPATION one can calculate the power dissipation of the device which in this case is 225 milliwatts. The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 MMBF0202PLT1 PACKAGE DIMENSIONS SOT–23 (TO–236) CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN http://onsemi.com 6 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBF0202PLT1 Notes http://onsemi.com 7 MMBF0202PLT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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