IGBT FME6G10US60 Econo Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required. Features • • • • • Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 10A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 17PM-BA Application • • • • • 5 1 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS 9 6 2 10 U V W 3 7 11 4 8 12 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting Screw : M4 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FME6G10US60 600 ± 20 10 20 10 20 10 37 -40 to +150 -40 to +125 2500 Units V V A A A A us W °C °C V 1.25 N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2000 Fairchild Semiconductor International FME6G10US60 Rev. A FME6G10US60 September 2000 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 10mA, VCE = VGE 5.0 6.0 8.5 V -- 2.2 2.8 V ---- 660 115 25 ---- pF pF pF --------------- 15 30 36 158 141 215 356 16 33 42 242 161 452 613 --50 200 --500 --60 350 --860 ns ns nS ns mJ mJ mJ ns ns ns ns mJ mJ mJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2000 Fairchild Semiconductor International VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 10A, VGE = 15V ---- 30 5 8 45 10 16 nC nC nC @ TC = FME6G10US60 Rev. A FME6G10US60 Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 10A TC = 100°C IF = 10A di / dt = 20 A/us Min. -- Typ. 1.8 Max. 2.8 -- 1.75 -- TC = 25°C -- 90 130 TC = 100°C -- 110 -- TC = 25°C -- 0.7 1.2 TC = 100°C -- 1 -- TC = 25°C -- 32 70 TC = 100°C -- 55 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC Weight Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module ©2000 Fairchild Semiconductor International Typ. ---- Max. 3.3 4.0 60 Units °C/W °C/W g FME6G10US60 Rev. A FME6G10US60 Electrical Characteristics of DIODE T Common Emitter T C = 25℃ 35 15V 20V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 25 Collector Current, IC [A] Collector Current, IC [A] FME6G10US60 30 40 30 12V 25 20 V GE = 10V 15 20 15 10 10 5 5 0 0 0 2 4 6 1 8 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 16 Common Emitter V GE = 15V VCC = 300V Load Current : peak of square wave 14 3.5 20A 12 Load Current [A] Collector - Emitter Voltage, VCE [V] 4.0 3.0 2.5 10A 2.0 10 8 6 4 IC = 5A 1.5 Duty cycle : 50% T C = 100℃ Power Dissipation = 18W 2 0 1.0 -50 0 50 100 0.1 150 1 10 Case Temperature, T C [℃] 100 1000 Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, V CE [V] 16 12 8 20A 4 10A IC = 5A 0 16 12 8 20A 4 10A IC = 5A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2000 Fairchild Semiconductor International 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FME6G10US60 Rev. A FME6G10US60 1400 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 1000 Switching Time [ns] Capacitance [pF] 1200 Cies 800 600 400 Common Emitter V CC = 300V, V GE = ± 15V IC = 10A T C = 25℃ ━━ T C = 125℃ ------ Ton Tr 100 Coes 200 Cres 10 0 1 10 10 Fig 7. Capacitance Characteristics Switching Time [ns] 1000 100 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, V GE = ± 15V IC = 10A TC = 25℃ ━━ TC = 125℃ ------ 1000 Switching Loss [uJ] Toff Common Emitter VCC = 300V, VGE = ± 15V IC = 10A TC = 25℃ ━━ TC = 125℃ ------ Toff Tf Tf Eoff Eon Eoff 100 100 10 100 10 100 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 20 Ω TC = 25℃ ━━ TC = 125℃ ------ 100 Switching Time [ns] Switching Time [ns] Common Emitter V GE = ± 15V, RG = 20Ω T C = 25℃ ━━ T C = 125℃ -----Ton Tr Toff Tf Toff Tf 100 10 6 8 10 12 14 16 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2000 Fairchild Semiconductor International 18 20 6 8 10 12 14 16 18 20 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FME6G10US60 Rev. A Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 1000 Eoff 100 Eon FME6G10US60 15 Common Emitter VGE = ± 15V, RG = 20 Ω TC = 25℃ ━━ TC = 125℃ ------ Common Emitter RL = 30 Ω TC = 25℃ 12 300 V VCC = 100 V 200 V 9 6 3 0 5 10 15 20 0 10 Collector Current, IC [A] 20 30 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 50 IC MAX. (Pulsed) 50us Collector Current, I C [A] Collector Current, I C [A] 10 IC MAX. (Continuous) 100us 1㎳ 1 DC Operation Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area V GE = 20V, TC = 100℃ 1 0.01 0.1 1 10 100 1 1000 10 Fig 15. SOA Characteristics 10 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 1000 Fig 16. Turn-Off SOA Characteristics 50 10 1 0.1 100 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Single Nonrepetitive Pulse T J ≤ 125℃ VGE = 15V RG = 20 Ω 0 100 200 0.1 IGBT : DIODE : 0.01 300 400 500 Collector-Emitter Voltage, VCE [V] Fig 17. RBSOA Characteristics ©2000 Fairchild Semiconductor International 1 600 700 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedence FME6G10US60 Rev. A 20 F [A] 30 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode V GE = 0V T C = 25℃ T C = 125℃ 35 Forward Current, I FME6G10US60 40 25 20 15 10 5 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2000 Fairchild Semiconductor International 3 4 10 T rr 1 Irr Common Cathode di/dt = 20A/㎲ TC = 25℃ TC = 100℃ 0.1 2 4 6 8 10 12 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FME6G10US60 Rev. A FME6G10US60 Package Dimension 30%$)63.*&2'(%* Max 106.0 93.0±0.2 12.2 4-∅2.5 4*15.24=60.96 6.8 15.24±0.1 2.2 NAME PLATE 0.8 P+ Max 32 W 25.2 V 27.94 U 22.0 N- 12 1 3.81±0.1 11.43±0.1 5*11.43=57.15 2-∅4.5 4-∅4.6 82.0 79.0 28.2±1 12.2 5.8 10.7 1.15 Dimensions in Millimeters ©2000 Fairchild Semiconductor International FME6G10US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1