ETC FME6G10US60

IGBT
FME6G10US60
Econo Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control, UPS
and general inverters where short-circuit ruggedness is
required.
Features
•
•
•
•
•
Short Circuit rated 10us @ TC = 100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 10A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 17PM-BA
Application
•
•
•
•
•
5
1
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
9
6
2
10
U
V
W
3
7
11
4
8
12
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting Screw : M4
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
FME6G10US60
600
± 20
10
20
10
20
10
37
-40 to +150
-40 to +125
2500
Units
V
V
A
A
A
A
us
W
°C
°C
V
1.25
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2000 Fairchild Semiconductor International
FME6G10US60 Rev. A
FME6G10US60
September 2000
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
IC = 10mA, VCE = VGE
5.0
6.0
8.5
V
--
2.2
2.8
V
----
660
115
25
----
pF
pF
pF
---------------
15
30
36
158
141
215
356
16
33
42
242
161
452
613
--50
200
--500
--60
350
--860
ns
ns
nS
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 10A,
VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
©2000 Fairchild Semiconductor International
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC = 10A,
VGE = 15V
----
30
5
8
45
10
16
nC
nC
nC
@ TC =
FME6G10US60 Rev. A
FME6G10US60
Electrical Characteristics of IGBT T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 10A
TC = 100°C
IF = 10A
di / dt = 20 A/us
Min.
--
Typ.
1.8
Max.
2.8
--
1.75
--
TC = 25°C
--
90
130
TC = 100°C
--
110
--
TC = 25°C
--
0.7
1.2
TC = 100°C
--
1
--
TC = 25°C
--
32
70
TC = 100°C
--
55
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
©2000 Fairchild Semiconductor International
Typ.
----
Max.
3.3
4.0
60
Units
°C/W
°C/W
g
FME6G10US60 Rev. A
FME6G10US60
Electrical Characteristics of DIODE T
Common Emitter
T C = 25℃
35
15V
20V
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
25
Collector Current, IC [A]
Collector Current, IC [A]
FME6G10US60
30
40
30
12V
25
20
V GE = 10V
15
20
15
10
10
5
5
0
0
0
2
4
6
1
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
16
Common Emitter
V GE = 15V
VCC = 300V
Load Current : peak of square wave
14
3.5
20A
12
Load Current [A]
Collector - Emitter Voltage, VCE [V]
4.0
3.0
2.5
10A
2.0
10
8
6
4
IC = 5A
1.5
Duty cycle : 50%
T C = 100℃
Power Dissipation = 18W
2
0
1.0
-50
0
50
100
0.1
150
1
10
Case Temperature, T C [℃]
100
1000
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
T C = 125℃
Collector - Emitter Voltage, VCE [V]
Common Emitter
T C = 25℃
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, V CE [V]
16
12
8
20A
4
10A
IC = 5A
0
16
12
8
20A
4
10A
IC = 5A
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2000 Fairchild Semiconductor International
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
FME6G10US60 Rev. A
FME6G10US60
1400
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
1000
Switching Time [ns]
Capacitance [pF]
1200
Cies
800
600
400
Common Emitter
V CC = 300V, V GE = ± 15V
IC = 10A
T C = 25℃ ━━
T C = 125℃ ------
Ton
Tr
100
Coes
200
Cres
10
0
1
10
10
Fig 7. Capacitance Characteristics
Switching Time [ns]
1000
100
Gate Resistance, R G [Ω ]
Collector - Emitter Voltage, VCE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
1000
Switching Loss [uJ]
Toff
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Toff
Tf
Tf
Eoff
Eon
Eoff
100
100
10
100
10
100
Gate Resistance, R G [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 20 Ω
TC = 25℃ ━━
TC = 125℃ ------
100
Switching Time [ns]
Switching Time [ns]
Common Emitter
V GE = ± 15V, RG = 20Ω
T C = 25℃ ━━
T C = 125℃ -----Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
18
20
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FME6G10US60 Rev. A
Gate - Emitter Voltage, VGE [ V ]
Switching Loss [uJ]
1000
Eoff
100
Eon
FME6G10US60
15
Common Emitter
VGE = ± 15V, RG = 20 Ω
TC = 25℃ ━━
TC = 125℃ ------
Common Emitter
RL = 30 Ω
TC = 25℃
12
300 V
VCC = 100 V
200 V
9
6
3
0
5
10
15
20
0
10
Collector Current, IC [A]
20
30
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
50
IC MAX. (Pulsed)
50us
Collector Current, I C [A]
Collector Current, I C [A]
10
IC MAX. (Continuous)
100us
1㎳
1
DC Operation
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
10
Safe Operating Area
V GE = 20V, TC = 100℃
1
0.01
0.1
1
10
100
1
1000
10
Fig 15. SOA Characteristics
10
Thermal Response, Zthjc [℃/W]
Collector Current, I C [A]
1000
Fig 16. Turn-Off SOA Characteristics
50
10
1
0.1
100
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Single Nonrepetitive
Pulse T J ≤ 125℃
VGE = 15V
RG = 20 Ω
0
100
200
0.1
IGBT :
DIODE :
0.01
300
400
500
Collector-Emitter Voltage, VCE [V]
Fig 17. RBSOA Characteristics
©2000 Fairchild Semiconductor International
1
600
700
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedence
FME6G10US60 Rev. A
20
F
[A]
30
Peak Reverse Recovery Current, Irr [A]
Reverse Recovery Time, Trr [x10ns]
Common Cathode
V GE = 0V
T C = 25℃
T C = 125℃
35
Forward Current, I
FME6G10US60
40
25
20
15
10
5
0
0
1
2
Forward Voltage, V F [V]
Fig 19. Forward Characteristics
©2000 Fairchild Semiconductor International
3
4
10
T rr
1
Irr
Common Cathode
di/dt = 20A/㎲
TC = 25℃
TC = 100℃
0.1
2
4
6
8
10
12
Forward Current, IF [A]
Fig 20. Reverse Recovery Characteristics
FME6G10US60 Rev. A
FME6G10US60
Package Dimension
30%$)63.*&2'(%*
Max
106.0
93.0±0.2
12.2
4-∅2.5
4*15.24=60.96
6.8
15.24±0.1
2.2
NAME PLATE
0.8
P+
Max
32
W
25.2
V
27.94
U
22.0
N-
12
1
3.81±0.1
11.43±0.1
5*11.43=57.15
2-∅4.5
4-∅4.6
82.0
79.0
28.2±1
12.2
5.8
10.7
1.15
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
FME6G10US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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POP™
PowerTrench®
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TinyLogic™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. F1