CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS(ON)=17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability. TO-220 & TO-263 package. G D G G D S S CEB SERIES TO-263(DD-PAK) S CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS Ć 20 V ID 40 A IDM 120 A IS 40 A PD 50 0.4 W W/ C TJ, TSTG -65 to 175 C Thermal Resistance, Junction-to-Case RįJC 3 C/W Thermal Resistance, Junction-to-Ambient RįJA 62.5 C/W Parameter Drain Current-Continuous a @TJ=125 C -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a @Tc=25 C Derate above 25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS 4-92 Download from www.ICminer.com Electronic-Library Service CEP703AL/CEB703AL ELECTRICAL CHARACTERISTICS (TC 25 C unless otherwise noted) Parameter Min Typ Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 µA Gate-Body Leakage IGSS VGS =Ć20V, VDS = 0V Ć100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.7 3 V Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 25A 14 17 mΩ VGS = 4.5V, ID = 10A 22 30 mΩ 4 OFF CHARACTERISTICS 30 V ON CHARACTERISTICS a ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 10V, VDS = 10V VDS = 10V, ID = 25A 1 A 60 30 S 1005 PF 420 PF 100 PF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f =1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 15V, ID =25A, VGS = 10V, RGEN =24 Ω 23 ns 120 180 ns 80 120 ns 18 Fall Time tf 60 165 ns Total Gate Charge Qg 15 20 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =10V, ID = 25A, VGS =5V 3 nC 7 nC 4-93 Download from www.ICminer.com Electronic-Library Service CEP703AL/CEB703AL ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Condition Min Typ Max Unit VGS = 0V, Is =25A 0.93 1.3 Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VSD V Notes a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 40 40 VGS=10,8,7,6,5V 25 C VGS=4V 30 ID, Drain Current (A) ID, Drain Current(A) 35 25 20 15 10 VGS=3V 30 TJ=125 C 20 10 -55 C 5 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 VDS, Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3000 RDS(ON), Normalized Drain-Source On-Resistance 3.0 2500 C, Capacitance (pF) 4 2000 1500 Ciss 1000 Coss 500 Crss 0 VGS=10V 2.5 2.0 Tj=125 C 1.5 25 C 1.0 0.5 -55 C 0 0 5 10 15 20 25 30 0 10 20 30 40 ID, Drain Current(A) VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. Capacitance 4-94 Download from www.ICminer.com Electronic-Library Service 25 4-95 Download from www.ICminer.com Electronic-Library Service CEP703AL/CEB703AL 4 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 PDM 0.05 t1 t2 0.02 0.01 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 0.01 0.01 0.1 1 10 100 1000 10000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-96 Download from www.ICminer.com Electronic-Library Service