G2317 20V Single P-Channel Enhancement-Mode MOSFET General Description Product Summary Low gate charge. BVDSS Use as a load switch. RDS(on) @VGS = -4.5V < 42mΩ Use in PWM applications RDS(on) @VGS = -2.5V < 54mΩ RDS(on) @VGS = -1.8V < 70mΩ GTM Micro Devices 1 -20V G2317 a. Repetitive rating, Pulse width limited by junction temperature TJ (MAX)=150℃. Ratings are based on low frequency and duty cycles to keep initial TJ(MAX) =25℃ . b. The power dissipation PD is based on TJ(MAX) =150℃ , using≤10s junction-to-ambient thermal resistance. c. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TJ(MAX) = 25°C. The value in any given application depends on the user’s specific board design. d. The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient. GTM Micro Devices 2