ETC 1SR154

Diodes
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1SR154-400
Rectifier diode
1SR154-400
zApplications
General purpose rectification
zExternal dimensions (Unit : mm)
zLand size figure (Unit : mm)
2.0
4.2
0.1±0.02
0.1
5.0±0.3
4
②
1.2±0.3
1
①
4.5±0.2
zFeatures
1) Small power mold type. (PMDS)
2) High reliability.
2.0
2.6±0.2
PMDS
zConstruction
Silicon diffused junction
2.0±0.2
1.5±0.2
zStructure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (non-repetitive peak)
Reverse voltage (repetitive peak)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Symbol
VRMS
VR
Io
IFSM
Tj
Tstg
Limits
500
400
1
30
150
-55 to +150
Unit
V
V
A
A
℃
℃
Min.
-
Typ.
-
Max.
1.1
Unit
V
-
-
10
uA
Conditions
IF=1A
VR=400V
Rev.B
1/3
1SR154-400
Diodes
zElectrical characteristic curves (Ta=25°C)
100000
Ta=75℃
Ta=-25℃
0.01
1000
200
400
600
800
1000
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
Ta=25℃
10
Ta=-25℃
1
1200
10
1
0
970
100
200
300
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
400
450
950
AVE:932.2mV
940
930
350
300
250
200
150
AVE:28.27nA
100
60
50
40
30
20
0
0
VF DISPERSION MAP
Ct DISPERSION MAP
100
1cyc
8.3ms
50
AVE:64.0A
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
2.5
2
PEAK SURGE
FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(us)
Ifsm
1.5
AVE:1.597us
1
0.5
0
0
Ifsm
8.3ms 8.3ms
1cyc
50
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
Ifsm
t
0
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
IM=10mA
100
50
1
AVE:25.8pF
IR DISPERSION MAP
3
100
70
10
150
100
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
80
50
920
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
90
Ta=25℃
VR=400V
n=30pcs
400
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=1A
n=30pcs
960
5
100
500
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
Ta=75℃
0.1
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
0.001
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
Ta=125℃
10000
Ta=150℃
0.1
Ta=150℃
1ms
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
2
IF=0.5A
DC
Rth(j-a)
time
300us
Rth(j-c)
10
D=1/2
FORWARD POWER
DISSIPATION:Pf(W)
FORWARD CURRENT:IF(A)
Ta=125℃
REVERSE CURRENT:IR(nA)
1
Sin(θ=180)
1
1
0.1
0.001
0
0.1 TIME:t(s)
10
Rth-t CHARACTERISTICS
1000
0
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2
2/3
1SR154-400
Diodes
0.01
REVERSE POWER
DISSIPATION:PR (W)
0.008
0.006
Sin(θ=180)
D=1/2
0.004
DC
0.002
3
0A
0V
2.5
2
DC
Io
t
VR
D=t/T
VR=200V
T Tj=150℃
D=1/2
1.5
1
Sin(θ=180)
0.5
0
100
200
300
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
400
0A
0V
2.5
2
Io
t
DC
1.5
VR
D=t/T
VR=200V
T Tj=150℃
D=1/2
1
Sin(θ=180)
0.5
0
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
3
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
AVE:18.6V
20
15
10
AVE:5.00kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1