MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) (7.5) 93 10.5 46.5 13 B2 E2 23 8 23 15 37 30 10.5 Tab#110, t=0.5 8 M5 LABEL C2E1 E2 5 6.5 φ6.5 E1 B1 C1 E2 E1 B1 23 C2E1 C1 34 12 B2 E2 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A –IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25°C 400 W IB Base current DC 3 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 50 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 250 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open — — 2.0 mA IEBO Emitter cutoff current VEB=7V — — 50 mA VCE (sat) Collector-emitter saturation voltage — — 4.0 V VBE (sat) Base-emitter saturation voltage — — 4.0 V –VCEO Collector-emitter reverse voltage –IC=50A (diode forward voltage) — — 1.8 V hFE DC current gain IC=50A, VCE=4V 750 — — — — — 2.5 µs Switching time VCC=600V, IC=50A, IB1=100mA, IB2=–1.0A — — 15 µs — — 3.0 µs Transistor part (per 1/2 module) — — 0.31 °C/ W Diode part (per 1/2 module) — — 1.2 °C/ W Conductive grease applied (per 1/2 module) — — 0.13 °C/ W IC=50A, IB=67mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999