MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • • • • IC Collector current ............................ 5A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Non-Insulated Type APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 15.6 13.6 4.5 12.6 1.5 1 C 20 5 5 2 9.6 2 2 B 4 E 0.7 2 1.8 20 1 4.4 B C E 5.45 5.45 0.6 2.8 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Ratings Unit VCEX Collector-emitter voltage Parameter VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open IC Collector current PC IB Tj Tstg Symbol Conditions 7 V DC 5.0 A Collector dissipation TC=25°C 100 W Base current DC 2 A Junction temperature –40~+150 °C Storage temperature –40~+125 °C 0.59~0.98 N·m 6~10 kg·cm 5 g — Mounting torque Mounting screw M3 — Weight Typical value ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 50 mA VCE (sat) Collector-emitter saturation voltage — — 1.0 V VBE (sat) Base-emitter saturation voltage — — 1.5 V hFE DC current gain IC=3A, VCE=1V 5 — — — — — 1.0 µs Switching time VCC=600V, IC=3A, IB1=0.6A, –IB2=1.2A — — 4.0 µs — — 0.8 µs Transistor part — — 1.25 °C/ W Diode part — — — °C/ W Conductive grease applied — — 0.5 °C/ W IC=3A, IB=0.6A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 8 COLLECTOR CURRENT IC (A) Tj=25°C DC CURRENT GAIN hFE 7 IB=1A 6 5 IB=0.5A 4 IB=400mA IB=200mA 3 2 IB=100mA 1 1 2 3 4 5 VCE (V) ton, ts, tf (µs) VCE(sat) 10 –1 7 5 4 3 2 10 IB=400mA Tj=25°C Tj=125°C –1 2 3 4 5 7 10 0 2 3 4 5 7 101 COLLECTOR CURRENT IC (A) 2 3 4 5 7 10 0 2 3 4 5 7 10 1 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 2 10 0 7 5 4 3 2 VCE=1V COLLECTOR CURRENT IC (A) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VBE(sat) VCE=5.0V 10 1 7 5 4 3 2 SWITCHING TIME SATURATION VOLTAGE VCE (sat), VBE (sat) (V) COLLECTOR-EMITTER VOLTAGE Tj=25°C Tj=125°C 10 0 10–1 0 0 10 2 7 5 4 3 2 ts VCC=600V IB1=0.6A -–IB2=1.2A Tj=25°C Tj=125°C tf ton 10–1 4 5 7 10 0 2 3 4 5 7 10 1 2 34 COLLECTOR CURRENT IC (A) Feb.1999