ASI MRAL1720-5

MRAL1720-5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE 400 4L FLG
The ASI MRAL1720-5 is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.
FEATURES:
• Diffused Ballast Resistors.
• Internal Matching Network
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
1.0 A (CONT)
VCES
42 V
VEBO
3.5 V
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
8.0 °C/W
CHARACTERISTICS
SYMBOL
NONE
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BVCES
IC = 40 mA
42
V
BVEBO
IE = 0.5 mA
3.5
V
ICBO
VCB = 22 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
GPB
ηc
VCE = 22 V
IC = 200 mA
10
f = 1.0 MHz
Pout = 5.0 W
f = 1.7 GHz & 2.0 GHz
1.0
mA
100
---
8.0
pF
6.5
dB
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1