RB050LA-30 Diodes Schottky barrier diode RB050LA-30 zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 2.6±0.1 0.19 4.7±0.2 1.5±0.1 4.4 0～0.1 1.4 ① zFeatures 1) Small and Thin power mold type (PMDT) 2) Low IR 3) High reliability 3.8±0.1 1.4 2.0 0.95±0.1 0.5 PMDＴ zStructure 0～0.1 0.95±0.1 0.19 zStructure Silicon Epitaxial Planer ROHM : PMDＴ ① 0.2 0.3 Manufacture date zTaping dimensions (Unit : mm) 2.0±0.05 8.0±0.1 φ1.55±0.1 0 0.25±0.05 12.0±0.3 5.5±0.05 9.5±0.1 4.9±0.1 1.75±0.05 4.0±0.1 φ1.55±0.05 2.8±0.05 8.0±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol 30 VRM 30 VR 3 Io 70 IFSM 150 Tj -55 to +150 Tstg (*1)Tc=90℃max Mounted on epoxy board. 180°Half sine wave Rever voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current * Forward cirremt surge peak (60Hz・1cyc) Junction temperature Storage temperature Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Symbol VF Min. - Typ. - Max. 0.45 Unit V Reverse current IR - - 150 µA Conditions IF=3.0A VR=30V 1/3 RB050LA-30 Diodes zElectrical characteristic curves 1 Ta=150℃ Ta=25℃ Ta=-25℃ 0.1 0.01 REVERSE CURRENT:IR(uA) Ta=125℃ 10000 f=1MHz Ta=125℃ 100000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ FORWARD CURRENT:IF(A) Ta=150℃ 1000000 10 10000 Ta=75℃ 1000 Ta=25℃ 100 10 Ta=-25℃ 1 1000 100 0.1 0.001 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 440 430 420 410 AVE:414.1mV 400 160 140 120 100 80 150 AVE:214.0A 100 50 Ta=25℃ f=1MHz VR=0V n=10pcs 990 980 AVE:1012.1pF 970 0 950 Ct DISPERSION MAP 300 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 20 15 10 AVE:12.3ns 5 Ifsm 250 8.3ms 8.3ms 1cyc 200 150 100 50 0 0 1 IFSM DISRESION MAP t 300 200 100 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=100m IF=1A 1 1ms 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 100 3 1000 400 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 500 30 1000 960 25 0 25 1010 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 200 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 20 1020 30 Ifsm 15 1030 IR DISPERSION MAP 300 250 10 1040 20 VF DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) AVE:18.82uA 40 390 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=30V n=30pcs 180 60 0 30 1050 200 REVERSE CURRENT:IR(uA) Ta=25℃ IF=3A n=30pcs 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:VF(mV) 10 0.01 2 D=1/2 Sin(θ＝180) DC 1 time 300us 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 0 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 2/3 RB050LA-30 Diodes DC D=1/2 1 DC 5 t D=1/2 4 VR T D=t/T VR=15V Tj=150℃ 3 2 Sin(θ＝180) 1 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 t 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 2 Io 0A 0V 6 Io 0A 0V 7 7 3 DC 5 4 T VR D=t/T VR=15V Tj=150℃ D=1/2 3 2 Sin(θ＝180) 1 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 150 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:14.6kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1