LINER LT6200

LT6200/LT6200-5
LT6200-10/LT6201
165MHz, Rail-to-Rail Input
and Output, 0.95nV/√Hz
Low Noise, Op Amp Family
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FEATURES
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DESCRIPTIO
The LT®6200/LT6201 are single and dual ultralow noise,
rail-to-rail input and output unity gain stable op amps that
feature 0.95nV/√Hz noise voltage. These amplifiers combine very low noise with a 165MHz gain bandwidth,
50V/µs slew rate and are optimized for low voltage signal
conditioning systems. A shutdown pin reduces supply
current during standby conditions and thermal shutdown
protects the part from overload conditions.
Low Noise Voltage: 0.95nV/√Hz (100kHz)
Gain Bandwidth Product:
LT6200/LT6201 165MHz AV = 1
LT6200-5
800MHz AV ≥ 5
LT6200-10
1.6GHz
AV ≥ 10
Low Distortion: –80dB at 1MHz, RL = 100Ω
Dual LT6201 in Tiny DFN Package
Input Common Mode Range Includes Both Rails
Output Swings Rail-to-Rail
Low Offset Voltage: 1mV Max
Wide Supply Range: 2.5V to 12.6V
Output Current: 60mA Min
SOT-23 and SO-8 Packages
Operating Temperature Range –40°C to 85°C
Power Shutdown, Thermal Shutdown
The LT6200-5/LT6200-10 are single amplifiers optimized
for higher gain applications resulting in higher gain bandwidth and slew rate. The LT6200 family maintains its
performance for supplies from 2.5V to 12.6V and are
specified at 3V, 5V and ±5V.
For compact layouts the LT6200/LT6200-5/LT6200-10 are
available in the 6-lead ThinSOTTM and the 8-pin SO package. The dual LT6201 is available in an 8-pin SO package
with standard pinouts as well as a tiny, dual fine pitch
leadless package (DFN). These amplifiers can be used as
plug-in replacements for many high speed op amps to
improve input/output range and noise performance.
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APPLICATIO S
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Transimpedance Amplifiers
Low Noise Signal Processing
Active Filters
Rail-to-Rail Buffer Amplifiers
Driving A/D Converters
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
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TYPICAL APPLICATIO
Distortion vs Frequency
Single Supply, 1.5nV/√Hz, Photodiode Amplifier
PHILIPS
BF862
RF
10k
–
1k
+
VOUT ≈ 2V
+IPD • RF
LT6200
DISTORTION (dBc)
PHOTO
DIODE
AV = 1
VO = 2VP-P
–60 VS = ±2.5V
CF
5V
IPD
–50
–70
HD2, RL = 1k
–80
HD2, RL = 100Ω
–100
10k
–110
100k
0.1µF
6200 TA01
HD3, RL = 1k
–90
HD3, RL = 100Ω
1M
FREQUENCY (Hz)
10M
6200 G35
62001fa
1
LT6200/LT6200-5
LT6200-10/LT6201
U
W W
W
ABSOLUTE
AXI U RATI GS
(Note 1)
Total Supply Voltage (V+ to V–) ............................ 12.6V
Total Supply Voltage (V+ to V–) (LT6201DD) ............. 7V
Input Current (Note 2) ........................................ ±40mA
Output Short-Circuit Duration (Note 3) ............ Indefinite
Pin Current While Exceeding Supplies
(Note 12) ............................................................ ±30mA
Operating Temperature Range (Note 4) ...–40°C to 85°C
Specified Temperature Range (Note 5) ....–40°C to 85°C
Junction Temperature ........................................... 150°C
Junction Temperature (DD Package) ................... 125°C
Storage Temperature Range ..................–65°C to 150°C
Storage Temperature Range
(DD Package) ...................................... – 65°C to 125°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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W
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PACKAGE/ORDER I FOR ATIO
TOP VIEW
6 V+
OUT 1
V– 2
5 SHDN
+IN 3
4 –IN
TJMAX = 150°C, θJA = 160°C/W (Note 10)
OUT A 1
V– 4
LT6200CS6
LT6200IS6
LT6200CS6-5
LT6200IS6-5
LT6200CS6-10
LT6200IS6-10
LT6200CS8
LT6200IS8
LT6200CS8-5
LT6200IS8-5
LT6200CS8-10
LT6200IS8-10
TOP VIEW
8 NC
SHDN 1
–IN 2
+IN 3
V
–
A
B
8
V+
7
OUT B
6
–IN B
5
+IN B
5 NC
4
TJMAX = 150°C, θJA = 100°C/W
DD PACKAGE
8-LEAD (3mm × 3mm) PLASTIC DFN
TJMAX = 125°C, θJA = 160°C/W (NOTE 3)
UNDERSIDE METAL CONNECTED TO V –
LADG
+
8 V
OUT A 1
–IN A 2
V
–
4
S8 PART
MARKING
6200
6200I
62005
6200I5
620010
200I10
ORDER PART
NUMBER
TOP VIEW
+IN A 3
DD PART
MARKING*
6 OUT
S8 PACKAGE
8-LEAD PLASTIC SO
LTJZ
LTACB
LTACC
LT6201CDD
7 V+
–
+
ORDER PART
NUMBER
TOP VIEW
+IN A 3
ORDER PART
NUMBER
S6 PART
MARKING*
S6 PACKAGE
6-LEAD PLASTIC SOT-23
–IN A 2
ORDER PART
NUMBER
7 OUT B
–
+
–
+
6 –IN B
5 +IN B
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 100°C/W
LT6201CS8
LT6201IS8
S8 PART
MARKING
6201
6201I
*The temperature grade is identified by a label on the shipping container. Consult LTC Marketing for parts specified with wider operating temperature ranges.
62001fa
2
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
VSHDN = OPEN, unless otherwise noted.
SYMBOL
VOS
PARAMETER
Input Offset Voltage
IB
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
Input Bias Current
∆IB
IOS
IB Shift
IB Match (Channel-to-Channel) (Note 11)
Input Offset Current
Input Noise Voltage
en
in
Input Noise Voltage Density
TA = 25°C, VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply,
CONDITIONS
VS = 5V, VCM =Half Supply
VS = 3V, VCM = Half Supply
VS = 5V, VCM = V + to V –
VS = 3V, VCM = V + to V –
VCM = Half Supply
VCM = V – to V +
VCM = Half Supply
VCM = V+
VCM = V –
VCM = V – to V+
VCM = V – to V+
VCM = Half Supply
VCM = V+
VCM = V –
0.1Hz to 10Hz
MIN
– 40
– 50
f = 100kHz, VS = 5V
f = 10kHz, VS = 5V
TYP
0.1
0.9
0.6
1.8
0.2
0.5
–10
8
–23
31
0.3
0.1
0.02
0.4
600
1.1
1.5
MAX
1
2.5
2
4
1.1
2.2
18
68
5
4
4
5
2.4
UNITS
mV
mV
mV
mV
mV
mV
µA
µA
µA
µA
µA
µA
µA
µA
nVP-P
nV/√Hz
nV/√Hz
Input Noise Current Density, Balanced Source
f = 10kHz, VS = 5V
Unbalanced Source f = 10kHz, VS = 5V
2.2
3.5
pA/√Hz
pA/√Hz
Input Resistance
Common Mode
Differential Mode
0.57
2.1
MΩ
kΩ
CIN
Input Capacitance
Common Mode
Differential Mode
3.1
4.2
pF
pF
AVOL
Large-Signal Gain
VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2
VS = 5V, VO = 1V to 4V, RL = 100Ω to VS/2
VS = 3V, VO = 0.5V to 2.5V, RL = 1k to VS/2
70
11
17
120
18
70
V/mV
V/mV
V/mV
CMRR
Common Mode Rejection Ratio
VS = 5V, VCM = V – to V+
VS = 5V, VCM = 1.5V to 3.5V
VS = 3V, VCM = V – to V+
65
85
60
90
112
85
dB
dB
dB
CMRR Match (Channel-to-Channel) (Note 11)
VS = 5V, VCM = 1.5V to 3.5V
80
105
dB
Power Supply Rejection Ratio
VS = 2.5V to 10V, LT6201DD VS = 2.5V to 7V
60
68
dB
PSRR Match (Channel-to-Channel) (Note 11)
VS = 2.5V to 10V, LT6201DD VS = 2.5V to 7V
65
100
dB
PSRR
Minimum Supply Voltage (Note 6)
2.5
V
VOL
Output Voltage Swing LOW (Note 7)
No Load
ISINK = 5mA
VS = 5V, ISINK = 20mA
VS = 3V, ISINK = 20mA
9
50
150
160
50
100
290
300
mV
mV
mV
mV
VOH
Output Voltage Swing HIGH (Note 7)
No Load
ISOURCE = 5mA
VS = 5V, ISOURCE = 20mA
VS = 3V, ISOURCE = 20mA
55
95
220
240
110
190
400
450
mV
mV
mV
mV
ISC
Short-Circuit Current
VS = 5V
VS = 3V
IS
Supply Current per Amplifier
Disabled Supply Current per Amplifier
VS = 5V
VS = 3V
VSHDN = 0.3V
16.5
15
1.3
20
18
1.8
mA
mA
mA
ISHDN
SHDN Pin Current
VSHDN = 0.3V
200
280
µA
VL
VSHDN Pin Input Voltage LOW
0.3
V
VH
VSHDN Pin Input Voltage HIGH
±60
±50
V+ – 0.5
±90
±80
mA
mA
V
62001fa
3
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
VSHDN = OPEN, unless otherwise noted.
SYMBOL
tON
PARAMETER
TA = 25°C, VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply,
CONDITIONS
MIN
TYP
MAX
75
Shutdown Output Leakage Current
VSHDN = 0.3V
0.1
Turn-On Time
VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V
130
UNITS
µA
ns
tOFF
Turn-Off Time
VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V
180
ns
GBW
Gain Bandwidth Product
Frequency = 1MHz, VS = 5V
LT6200-5
LT6200-10
145
750
1450
MHz
MHz
MHz
SR
Slew Rate
VS = 5V, AV = –1, RL = 1k, VO = 4V
44
V/µs
210
340
V/µs
V/µs
4.66
MHz
165
ns
31
VS = 5V, AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
FPBW
Full Power Bandwidth (Note 9)
VS = 5V, VOUT = 3VP-P (LT6200)
tS
Settling Time (LT6200, LT6201)
0.1%, VS = 5V, VSTEP = 2V, AV = –1, RL = 1k
3.28
The ● denotes the specifications which apply over 0°C < TA < 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V;
VCM = VOUT = half supply, VSHDN = OPEN, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
VOS
Input Offset Voltage
VS = 5V, VCM = Half Supply
VS = 3V, VCM = Half Supply
●
●
0.2
1.0
1.2
2.7
mV
mV
VS = 5V, VCM = V + to V –
VS = 3V, VCM = V + to V –
●
●
0.3
1.5
3
4
mV
mV
VCM = Half Supply
VCM = V – to V +
●
●
0.2
0.4
1.8
2.8
mV
mV
2.5
8
µV/°C
–10
8
– 23
18
µA
µA
µA
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
MIN
VOS TC
Input Offset Voltage Drift (Note 8)
VCM = Half Supply
●
IB
Input Bias Current
VCM = Half Supply
VCM = V +
VCM = V –
●
●
●
– 40
– 50
UNITS
IB Match (Channel-to-Channel) (Note 11)
VCM
●
0.5
6
µA
∆IB
IB Shift
VCM = V – to V +
●
31
68
µA
IOS
Input Offset Current
VCM = Half Supply
VCM = V +
VCM = V –
●
●
●
0.1
0.02
0.4
4
4
5
µA
µA
µA
AVOL
Large-Signal Gain
VS = 5V, VO = 0.5V to 4.5V,RL = 1k to VS /2
VS = 5V, VO = 1.5V to 3.5V,RL = 100Ω to VS /2
VS = 3V, VO = 0.5V to 2.5V,RL = 1k to VS /2
●
●
●
46
7.5
13
80
13
22
V/mV
V/mV
V/mV
CMRR
Common Mode Rejection Ratio
VS = 5V, VCM = V – to V +
VS = 5V, VCM = 1.5V to 3.5V
VS = 3V, VCM = V – to V +
●
●
●
64
80
60
88
105
83
dB
dB
dB
CMRR Match (Channel-to-Channel) (Note 11)
VS = 5V, VCM = 1.5V to 3.5V
●
80
105
dB
Power Supply Rejection Ratio
VS = 3V to 10V, LT6201DD VS = 3V to 7V
●
60
65
dB
PSRR Match (Channel-to-Channel) (Note 11)
VS = 3V to 10V, LT6201DD VS = 3V to 7V
●
60
100
dB
●
3
PSRR
= V–
to V +
Minimum Supply Voltage (Note 6)
V
VOL
Output Voltage Swing LOW (Note 7)
No Load
ISINK = 5mA
VS = 5V, ISINK = 20mA
VS = 3V, ISINK = 20mA
●
●
●
●
12
55
170
170
60
110
310
310
mV
mV
mV
mV
VOH
Output Voltage Swing HIGH (Note 7)
No Load
ISOURCE = 5mA
VS = 5V, ISOURCE = 20mA
VS = 3V, ISOURCE = 20mA
●
●
●
●
65
115
260
270
120
210
440
490
mV
mV
mV
mV
62001fa
4
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over 0°C < TA < 70°C
temperature range. VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
ISC
Short-Circuit Current
VS = 5V
VS = 3V
●
●
IS
Supply Current per Amplifier
Disabled Supply Current per Amplifier
VS = 5V
VS = 3V
VSHDN = 0.3V
●
●
●
20
19
1.35
23
22
1.8
mA
mA
mA
ISHDN
SHDN Pin Current
VSHDN = 0.3V
●
215
295
µA
VL
VSHDN Pin Input Voltage LOW
0.3
V
75
µA
VH
MIN
TYP
±60
±45
±90
±75
●
VSHDN Pin Input Voltage HIGH
●
MAX
UNITS
mA
mA
V+ – 0.5
V
Shutdown Output Leakage Current
VSHDN = 0.3V
●
0.1
tON
Turn-On Time
VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V
●
130
ns
tOFF
Turn-Off Time
VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V
●
180
ns
SR
Slew Rate
VS = 5V, AV = –1, RL = 1k, VO = 4V
●
42
V/µs
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
●
●
190
310
V/µs
V/µs
VS = 5V, VOUT = 3VP-P (LT6200)
●
4.45
MHz
FPBW
Full Power Bandwidth (Note 9)
29
3.07
The ● denotes the specifications which apply over –40°C < TA < 85°C temperature range. Excludes the LT6201 in the DD package
(Note 3). VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN, unless otherwise noted. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
VS = 5V, VCM = Half Supply
VS = 3V, VCM = Half Supply
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
MIN
TYP
MAX
●
●
0.2
1.0
1.5
2.8
mV
mV
VS = 5V, VCM = V + to V –
VS = 3V, VCM = V + to V –
●
●
0.3
1.5
3.5
4.3
mV
mV
VCM = Half Supply
VCM = V – to V +
●
●
0.2
0.4
2
3
mV
mV
VOS TC
Input Offset Voltage Drift (Note 8)
VCM = Half Supply
●
IB
Input Bias Current
VCM = Half Supply
VCM = V+
VCM = V –
●
●
●
VCM = V – to V+
●
= V–
∆IB
IB Shift
–40
–50
UNITS
2.5
8.0
µV/°C
–10
8
–23
18
µA
µA
µA
31
68
µA
IB Match (Channel-to-Channel) (Note 11)
VCM
●
1
9
µA
IOS
Input Offset Current
VCM = Half Supply
VCM = V+
VCM = V –
●
●
●
0.1
0.02
0.4
4
4
5
µA
µA
µA
AVOL
Large-Signal Gain
VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS /2
VS = 5V, VO = 1.5V to 3.5V, RL = 100Ω to VS /2
VS = 3V, VO = 0.5V to 2.5V,RL = 1k to VS /2
●
●
●
40
7.5
11
70
13
20
V/mV
V/mV
V/mV
CMRR
Common Mode Rejection Ratio
VS = 5V, VCM = V – to V+
VS = 5V, VCM = 1.5V to 3.5V
VS = 3V, VCM = V – to V+
●
●
●
60
80
60
80
100
80
dB
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V
●
75
105
dB
Power Supply Rejection Ratio
VS = 3V to 10V
●
60
68
dB
PSRR Match (Channel-to-Channel) (Note 11)
VS = 3V to 10V
●
60
100
dB
●
3
PSRR
to V+
Minimum Supply Voltage (Note 6)
VOL
Output Voltage Swing LOW (Note 7)
No Load
ISINK = 5mA
VS = 5V, ISINK = 20mA
VS = 3V, ISINK = 20mA
●
●
●
●
V
18
60
170
175
70
120
310
315
mV
mV
mV
mV
62001fa
5
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over –40°C < TA < 85°C
temperature range. Excludes the LT6201 in the DD package (Note 3). VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply,
VSHDN = OPEN, unless otherwise noted. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
VOH
Output Voltage Swing HIGH (Note 7)
No Load
ISOURCE = 5mA
VS = 5V, ISOURCE = 20mA
VS = 3V, ISOURCE = 20mA
●
●
●
●
MIN
ISC
Short-Circuit Current
VS = 5V
VS = 3V
●
●
IS
Supply Current per Amplifier
●
●
●
22
20
1.4
25.3
23
1.9
mA
mA
mA
●
220
300
µA
0.3
V
±50
±30
Disabled Supply Current per Amplifier
VS = 5V
VS = 3V
VSHDN = 0.3V
ISHDN
SHDN Pin Current
VSHDN = 0.3V
VL
VSHDN Pin Input Voltage LOW
●
VH
VSHDN Pin Input Voltage HIGH
● V+ – 0.5
tON
MAX
UNITS
65
115
270
280
120
210
450
500
mV
mV
mV
mV
±80
±60
VSHDN = 0.3V
●
0.1
Turn-On Time
VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V
●
130
Turn-Off Time
VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V
●
SR
Slew Rate
VS = 5V, AV = –1, RL = 1k, VO = 4V
●
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
●
●
VS = 5V, VOUT = 3VP-P (LT6200)
●
Full Power Bandwidth (Note 9)
23
2.44
mA
mA
V
Shutdown Output Leakage Current
tOFF
FPBW
TYP
µA
75
ns
180
ns
33
V/µs
160
260
V/µs
V/µs
3.5
MHz
TA = 25°C, VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless otherwise noted. Excludes the LT6201 in the DD package (Note 3).
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
IB
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
Input Bias Current
∆IB
IB Shift
MIN
TYP
MAX
VCM = Half Supply
VCM = V+
VCM = V –
1.4
2.5
2.5
4
6
6
mV
mV
mV
VCM = 0V
VCM = V – to V +
VCM = Half Supply
VCM = V+
VCM = V –
0.2
0.4
–10
8
–23
1.6
3.2
mV
mV
µA
µA
µA
VCM = V – to V+
31
68
µA
= V–
6
7
7
12
µA
µA
µA
µA
– 40
– 50
to V+
IOS
IB Match (Channel-to-Channel) (Note 11)
Input Offset Current
VCM
VCM = Half Supply
VCM = V+
VCM = V –
0.2
1.3
1
3
en
Input Noise Voltage
Input Noise Voltage Density
0.1Hz to 10Hz
f = 100kHz
f = 10kHz
f = 10kHz
f = 10kHz
Common Mode
Differential Mode
Common Mode
Differential Mode
VO = ±4.5V, RL = 1k
VO = ±2V, RL = 100
600
0.95
1.4
2.2
3.5
0.57
2.1
3.1
4.2
200
26
in
Input Noise Current Density, Balanced Source
Unbalanced Source
Input Resistance
CIN
Input Capacitance
AVOL
Large-Signal Gain
115
15
18
2.3
UNITS
nVP-P
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
MΩ
kΩ
pF
pF
V/mV
V/mV
62001fa
6
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
noted. Excludes the LT6201 in the DD package (Note 3).
TA = 25°C, VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless otherwise
SYMBOL
CMRR
PARAMETER
Common Mode Rejection Ratio
CONDITIONS
VCM = V – to V+
VCM = –2V to 2V
MIN
68
75
TYP
96
100
PSRR
CMRR Match (Channel-to-Channel) (Note 11)
Power Supply Rejection Ratio
MAX
VCM = –2V to 2V
VS = ±1.25V to ±5V
80
60
105
68
dB
dB
VS = ±1.25V to ±5V
No Load
ISINK = 5mA
ISINK = 20mA
65
VOL
PSRR Match (Channel-to-Channel) (Note 6)
Output Voltage Swing LOW (Note 7)
100
12
55
150
dB
mV
mV
mV
VOH
Output Voltage Swing HIGH (Note 7)
No Load
ISOURCE = 5mA
ISOURCE = 20mA
ISC
Short-Circuit Current
IS
Supply Current per Amplifier
Disabled Supply Current per Amplifier
50
110
290
UNITS
dB
dB
70
110
225
±90
130
210
420
mV
mV
mV
mA
VSHDN = 0.3V
20
1.6
23
2.1
mA
mA
VSHDN = 0.3V
200
280
0.3
µA
V
75
V
µA
±60
ISHDN
VL
SHDN Pin Current
VSHDN Pin Input Voltage LOW
VH
VSHDN Pin Input Voltage HIGH
Shutdown Output Leakage Current
VSHDN = 0.3V
0.1
tON
tOFF
Turn-On Time
Turn-Off Time
VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V
VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V
130
180
ns
ns
GBW
Gain Bandwidth Product
SR
Slew Rate
Frequency = 1MHz
LT6200-5
LT6200-10
AV = –1, RL = 1k, VO = 4V
110
530
1060
35
165
800
1600
50
MHz
MHz
MHz
V/µs
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
175
315
250
450
V/µs
V/µs
33
47
140
MHz
ns
FPBW
tS
Full Power Bandwidth (Note 9)
Settling Time (LT6200, LT6201)
V+ – 0.5
VOUT = 3VP-P (LT6200-10)
0.1%, VSTEP = 2V, AV = –1, RL = 1k
62001fa
7
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over 0°C < TA < 70°C
temperature range. Excludes the LT6201 in the DD package (Note 3). VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless
otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
VOS
Input Offset Voltage
VCM = Half Supply
VCM = V+
VCM = V –
●
●
●
1.9
3.5
3.5
4.5
7.5
7.5
mV
mV
mV
VCM = 0V
VCM = V – to V +
VCM = Half Supply
●
●
VOS TC
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
Input Offset Voltage Drift (Note 8)
0.2
0.4
8.2
1.8
3.4
24
mV
mV
µV/°C
IB
Input Bias Current
VCM = Half Supply
VCM = V+
VCM = V –
VCM = V – to V+
●
●
●
∆IB
IB Shift
= V–
to V+
MIN
●
–40
–50
●
UNITS
–10
8
–23
31
68
µA
µA
µA
µA
1
1.3
1.0
3.5
9
10
10
15
µA
µA
µA
µA
18
IB Match (Channel-to-Channel) (Note 11)
Input Offset Current
VCM
VCM = Half Supply
VCM = V+
VCM = V –
●
IOS
AVOL
Large-Signal Gain
VO = ±4.5V, RL = 1k
VO = ±2V, RL = 100
●
●
46
7.5
80
13.5
V/mV
V/mV
CMRR
Common Mode Rejection Ratio
VCM = V – to V+
VCM = –2V to 2V
●
●
65
75
90
100
dB
dB
●
●
●
CMRR Match (Channel-to-Channel) (Note 11)
VCM = –2V to 2V
●
75
105
dB
PSRR
Power Supply Rejection Ratio
VS = ±1.5V to ±5V
●
60
65
dB
PSRR Match (Channel-to-Channel) (Note 6)
Output Voltage Swing LOW (Note 7)
60
VOH
Output Voltage Swing HIGH (Note 7)
VS = ±1.5V to ±5V
No Load
ISINK = 5mA
ISINK = 20mA
No Load
ISOURCE = 5mA
ISOURCE = 20mA
●
VOL
100
16
60
170
85
125
265
ISC
IS
ISHDN
Short-Circuit Current
Supply Current per Amplifier
Disabled Supply Current per Amplifier
SHDN Pin Current
VL
VH
VSHDN Pin Input Voltage LOW
VSHDN Pin Input Voltage HIGH
VSHDN = 0.3V
VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V
●
tON
Shutdown Output Leakage Current
Turn-On Time
tOFF
SR
Turn-Off Time
Slew Rate
VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V
AV = –1, RL = 1k, VO = 4V
●
Full Power Bandwidth (Note 9)
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
VOUT = 3VP-P (LT6200-10)
FPBW
●
●
●
●
●
●
●
VSHDN = 0.3V
VSHDN = 0.3V
±60
●
●
●
±90
25
1.6
215
●
●
70
120
310
150
230
480
dB
mV
mV
mV
mV
mV
mV
29
2.1
295
mA
mA
mA
µA
0.3
V
V
75
µA
ns
V+ – 0.5
0.1
130
●
●
31
180
44
ns
V/µs
●
●
150
290
30
215
410
43
V/µs
V/µs
MHz
●
62001fa
8
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over –40°C < TA < 85°C
temperature range. Excludes the LT6201 in the DD package (Note 3). VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless
otherwise noted. (Note 5)
SYMBOL
VOS
VOS TC
IB
∆IB
PARAMETER
Input Offset Voltage
CONDITIONS
VCM = Half Supply
VCM = V+
VCM = V –
●
●
●
TYP
1.9
3.5
3.5
MAX
4.5
7.5
7.5
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = 0V
VCM = V – to V +
●
●
0.2
0.4
2.0
3.6
mV
mV
Input Offset Voltage Drift (Note 8)
Input Bias Current
VCM = Half Supply
VCM = Half Supply
VCM = V+
VCM = V –
●
8.2
–10
8
–23
24
µV/°C
µA
µA
µA
VCM = V – to V+
●
31
68
µA
●
4
12
µA
VCM = Half Supply
VCM = V+
VCM = V –
VO = ±4.5V, RL = 1k
VO = ±2V RL = 100
VCM = V – to V+
VCM = –2V to 2V
●
●
●
10
10
15
46
7.5
65
75
1.3
1.0
3.5
80
13.5
90
100
µA
µA
µA
V/mV
V/mV
dB
dB
IB Shift
IB Match (Channel-to-Channel) (Note 11)
MIN
●
●
●
–40
–50
IOS
Input Offset Current
AVOL
Large-Signal Gain
CMRR
Common Mode Rejection Ratio
CMRR Match (Channel-to-Channel) (Note 11)
Power Supply Rejection Ratio
VCM = –2V to 2V
VS = ±1.5V to ±5V
●
PSRR
●
75
60
105
65
PSRR Match (Channel-to-Channel) (Note 6)
Output Voltage Swing LOW (Note 7)
VS = ±1.5V to ±5V
No Load
ISINK = 5mA
ISINK = 20mA
●
60
VOL
100
16
60
170
VOH
Output Voltage Swing HIGH (Note 7)
No Load
ISOURCE = 5mA
ISOURCE = 20mA
●
●
●
ISC
Short-Circuit Current
IS
Supply Current
Disabled Supply Current
●
●
●
●
●
●
●
●
±60
18
UNITS
mV
mV
mV
dB
dB
75
125
310
dB
mV
mV
mV
85
125
265
±90
150
230
480
mV
mV
mV
mA
VSHDN = 0.3V
●
●
25
1.6
29
2.1
mA
mA
VSHDN = 0.3V
●
215
295
0.3
µA
V
75
V
µA
ISHDN
VL
SHDN Pin Current
VSHDN Pin Input Voltage LOW
VH
VSHDN Pin Input Voltage HIGH
Shutdown Output Leakage Current
VSHDN = 0.3V
●
0.1
tON
tOFF
Turn-On Time
Turn-Off Time
VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V
VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V
●
130
180
ns
ns
SR
Slew Rate
AV = –1, RL = 1k, VO = 4V
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
●
31
44
V/µs
●
●
125
260
180
370
V/µs
V/µs
VOUT = 3VP-P (LT6200-10)
●
27
39
MHz
FPBW
Full Power Bandwidth (Note 9)
●
● V+ – 0.5
Note 1: Absolute maximum ratings are those values beyond which the life
of the device may be impaired.
Note 2: Inputs are protected by back-to-back diodes. If the differential
input voltage exceeds 0.7V, the input current must be limited to less than
40mA.
Note 3: A heat sink may be required to keep the junction temperature
below the absolute maximum rating when the output is shorted
●
indefinitely. The LT6201 in the DD package is limited by power dissipation
to VS ≤ 5V, 0V over the commercial temperature range only.
Note 4: The LT6200C/LT6200I and LT6201C/LT6201I are guaranteed
functional over the temperature range of –40°C and 85°C (LT6201DD
excluded).
62001fa
9
LT6200/LT6200-5
LT6200-10/LT6201
ELECTRICAL CHARACTERISTICS
Note 5: The LT6200C/LT6201C are guaranteed to meet specified
performance from 0°C to 70°C. The LT6200C/LT6201C are designed,
characterized and expected to meet specified performance from – 40°C to
85°C, but are not tested or QA sampled at these temperatures. The
LT6200I is guaranteed to meet specified performance from –40°C to 85°C.
Note 6: Minimum supply voltage is guaranteed by power supply rejection
ratio test.
Note 7: Output voltage swings are measured between the output and
power supply rails.
Note 8: This parameter is not 100% tested.
Note 9: Full-power bandwidth is calculated from the slew rate:
FPBW = SR/2πVP
Note 10: Thermal resistance varies depending upon the amount of PC
board metal attached to the V – pin of the device. θJA is specified for a
certain amount of 2oz copper metal trace connecting to the V – pin as
described in the thermal resistance tables in the Application Information
section.
Note 11: Matching parameters on the LT6201 are the difference between
the two amplifiers. CMRR and PSRR match are defined as follows: CMRR
and PSRR are measured in µV/V on the identical amplifiers. The difference
is calculated in µV/V. The result is converted to dB.
Note 12: There are reverse biased ESD diodes on all inputs and outputs as
shown in Figure 1. If these pins are forced beyond either supply, unlimited
current will flow through these diodes. If the current is transient in nature
and limited to less than 30mA, no damage to the device will occur.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VOS Distribution, VCM = V +/2
80
VOS Distribution, VCM = V +
80
VS = 5V, 0V
SO-8
70
70
50
40
30
50
40
30
40
30
20
20
10
10
10
600
–600
–200
200
INPUT OFFSET VOLTAGE (µV)
0
–1600–1200 –800 –400 0 400 800 1200 1600
INPUT OFFSET VOLTAGE (µV)
1000
6200 G01
0
–1600–1200 –800 –400 0 400 800 1200 1600
INPUT OFFSET VOLTAGE (µV)
6200 G02
6200 G03
Offset Voltage
vs Input Common Mode Voltage
Supply Current vs Supply Voltage
3.0
30
TA = 125°C
Input Bias Current
vs Common Mode Voltage
20
VS = 5V, 0V
TYPICAL PART
2.5
VS = 5V, 0V
10
25
20
TA = 25°C
15
TA = –55°C
10
INPUT BIAS CURRENT (µA)
2.0
OFFSET VOLTAGE (mV)
SUPPLY CURRENT (mA)
50
20
0
–1000
VS = 5V, 0V
SO-8
60
NUMBER OF UNITS
60
NUMBER OF UNITS
NUMBER OF UNITS
80
VS = 5V, 0V
SO-8
70
60
VOS Distribution, VCM = V –
1.5
TA = 125°C
1.0
0.5
TA = 25°C
0
TA = –55°C
–0.5
0
–10
TA = –55°C
–20
TA = 25°C
–30
5
–1.0
0
TA = 125°C
–40
–1.5
0
2
8
12
6
10
4
TOTAL SUPPLY VOLTAGE (V)
14
6200 G04
0
4
1
3
2
INPUT COMMON MODE VOLTAGE (V)
6200 G05
5
–1
0
3
5
2
4
1
COMMON MODE VOLTAGE (V)
6
6200 G06
62001fa
10
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Input Bias Current
vs Temperature
OUTPUT SATURATION VOLTAGE (V)
VCM = 5V
10
5
0
–5
–10
–15
VCM = 0V
–20
–25
–30
–50 –35 –20 – 5 10 25 40 55
TEMPERATURE (°C)
70
85
10
VS = 5V, 0V
1
0.1
TA = 125°C
TA = –55°C
0.01
TA = 25°C
1
10
LOAD CURRENT (mA)
0.1
0.5
0
TA = –55°C
–0.5
TA = 25°C
TA = 125°C
–1.5
100
80
SOURCING
2.5
TA = –55°C
1.5
40
20
0
–20
–40
–60
SINKING
TA = 25°C
–80
TA = –55°C
2
3.5
3
2.5
4
4.5
POWER SUPPLY VOLTAGE (±V)
2.5
VS = 5V, 0V
TA = 25°C
INPUT VOLTAGE (mV)
INPUT VOLTAGE (mV)
0
RL = 100Ω
–1.0
0
– 0.5
–1.0
–1.5
–2.0
4
5
6200 G13
2.5
–2.5
3
VS = ±5V
10
0.5
–1.5
3
2
OUTPUT VOLTAGE (V)
1.5
2
1
OUTPUT VOLTAGE (V)
Offset Voltage vs Output Current
15
1.0
–2.0
–2.5
0.5
6200 G12
1.5
RL = 1k
RL = 100Ω
–1.0
–2.5
5
VS = ±5V
TA = 25°C
2.0
1.5
1
–0.5
Open-Loop Gain
0.5
RL = 1k
0
6200 G11
Open-Loop Gain
0
0.5
–2.0
6200 G10
–0.5
1.0
–1.5
TA = 125°C
1.5
VS = 3V, 0V
TA = 25°C
2.0
TA = 125°C
60
5
1.0
100
Open-Loop Gain
–120
–2.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
TOTAL SUPPLY VOLTAGE (V)
1
10
LOAD CURRENT (mA)
6200 G09
TA = 25°C
–100
0
TA = –55°C
0.1
INPUT VOLTAGE (mV)
OUTPUT SHORT-CIRCUIT CURRENT (mA)
CHANGE IN OFFSET VOTLAGE (mV)
VCM = VS/2
2.0
TA = 25°C
Output Short-Circuit Current
vs Power Supply Voltage
120
2.5
TA = 125°C
0.1
6200 G08
Minimum Supply Voltage
–1.0
1
100
6200 G07
1.0
VS = 5V, 0V
0.01
0.001
OFFSET VOLTAGE (mV)
INPUT BIAS CURRENT (µA)
10
VS = 5V, 0V
15
Output Saturation Voltage
vs Load Current (Output High)
OUTPUT SATURATION VOLTAGE (V)
20
Output Saturation Voltage
vs Load Current (Output Low)
RL = 1k
RL = 100Ω
5
TA = 125°C
0
TA = –55°C
TA = 25°C
–5
–10
–5 –4 –3 –2 –1 0 1 2 3
OUTPUT VOLTAGE (V)
4
5
6200 G14
–15
–100
–60
–20
20
60
OUTPUT CURRENT (mA)
100
6200 G15
62001fa
11
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Warm-Up Drift
vs Time (LT6200S8)
Total Noise vs Source Resistance
TA = 25°C
250
VS = ±5V
200
150
100
VS = ±1.5V
VS = ±2.5V
0
0
20
LT6200
TOTAL NOISE
RESISTOR
NOISE
1
LT6200 AMPLIFIER
NOISE VOLTAGE
25
NPN ACTIVE
VCM = 4.5V
15
BOTH ACTIVE
VCM = 2.5V
10
100k
35
15
BOTH ACTIVE
VCM = 2.5V
10
NPN ACTIVE
VCM = 4.5V
5
30
PNP ACTIVE
VCM = 0.5V
25
20
BOTH ACTIVE
VCM = 2.5V
15
NPN ACTIVE
VCM = 4.5V
800
VS = 5V, 0V
TA = 25°C
UNBALANCED
SOURCE
RESISTANCE
600
400
200
0
–200
5
–600
100
1k
10k
FREQUENCY (Hz)
–800
100k
TIME (5SEC/DIV)
6200 G20
6200 G19
Supply Current
vs SHDN Pin Voltage
6200 G21
SHDN Pin Current
vs SHDN Pin Voltage
50
VS = 5V, 0V
VS = 5V, 0V
0
18
TA = 125°C
16
14
SHDN PIN CURRENT (µA)
20
VS = 5V, 0V
VCM = VS/2
–400
10
100k
100k
0.1Hz to 10Hz Output Noise
Voltage
0
22
10k
6200 G18
10
0
1k
10k
FREQUENCY (Hz)
1k
100
FREQUENCY (Hz)
Unbalanced Noise Current
vs Frequency
UNBALANCED NOISE CURRENT (pA/√Hz)
PNP ACTIVE
VCM = 0.5V
10
6200 G17
VS = 5V, 0V
TA = 25°C
BALANCED
SOURCE
RESISTANCE
20
SUPPLY CURRENT (mA)
25
20
0
100
1k
10k
SOURCE RESISTANCE (Ω)
10
Balanced Noise Current
vs Frequency
BALANCED NOISE CURRENT (pA/√Hz)
30
0.1
40 60 80 100 120 140 160
TIME AFTER POWER-UP (SEC)
100
PNP ACTIVE
VCM = 0.5V
35
5
6200 G16
10
VS = 5V, 0V
TA = 25°C
40
OUTPUT VOLTAGE NOISE (nV)
50
10
VS = ±5V
VCM = 0V
f = 100kHz
UNBALANCED
SOURCE
RESISTORS
Input Noise Voltage vs Frequency
45
NOISE VOLTAGE (nV/√Hz)
100
TOTAL NOISE VOLTAGE (nV/√Hz)
CHANGE IN OFFSET VOLTAGE (µV)
300
TA = 25°C
12
10
8
6
TA = –55°C
4
TA = 25°C
–50
TA = –55°C
–100
TA = 125°C
–150
–200
–250
2
–300
0
0
1
2
3
4
SHDN PIN VOLTAGE (V)
5
0
1
2
3
4
5
SHDN PIN VOLTAGE (V)
6200 G43
6200 G44
62001fa
12
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS LT6200, LT6201
Gain Bandwidth and Phase
Margin vs Temperature
Open-Loop Gain vs Frequency
60
70
50
60
PHASE MARGIN
40
VS = ±5V
180
160
VS = 3V, 0V
120
PHASE
60
GAIN
40
100
–20
–40
VS = 5V, 0V
CL = 5pF
RL = 1k
–20
100k
125
0
VCM = 0.5V
VCM = 4.5V
–10
0
25
50
75
TEMPERATURE (°C)
40
20
20
0
–25
VCM = 4.5V
30
10
GAIN BANDWIDTH
100
–50
1M
–60
–80
10M
100M
FREQUENCY (Hz)
Gain Bandwidth and Phase
Margin vs Supply Voltage
Open-Loop Gain vs Frequency
80
120
PHASE
30
–10
40
20
0
VS = ±1.5V
10
0
VS = ±1.5V
VS = ±5V
20
–20
VCM = 0V
CL = 5pF
RL = 1k
–20
100k
1M
GAIN BANDWIDTH (MHz)
GAIN (dB)
40
60
PHASE (DEG)
GAIN
80
10M
100M
FREQUENCY (Hz)
70
PHASE MARGIN
50
30
180
160
GAIN BANDWIDTH
140
120
–60
100
–80
80
0
2
8
6
4
10
12
TOTAL SUPPLY VOLTAGE (V)
6200 G24
1000
AV = –1
RF = RG = 1k
RL = 1k
100
VS = ±5V FALLING
80
60
40
120
VS = 5V, 0V
100
VS = ±5V RISING
VS = ±2.5V RISING
VS = ±2.5V FALLING
OUTPUT IMPEDANCE (Ω)
SLEW RATE (V/µs)
120
Common Mode Rejection Ratio
vs Frequency
Output Impedance vs Frequency
140
10
1
AV = 10
AV = 2
AV = 1
0.1
20
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
6200 G26
14
6200 G25
COMMON MODE REJECTION RATIO (dB)
Slew Rate vs Temperature
60
40
–40
1G
80
PHASE MARGIN (DEG)
50
TA = 25°C
RL = 1k
CL = 5pF
100
VS = ±5V
60
1G
6200 G23
6200 G22
70
80
VCM = 0.5V
50
140
120
100
PHASE (DEG)
PHASE MARGIN (DEG)
GAIN BANDWIDTH (MHz)
VS = 3V, 0V
80
GAIN (dB)
VS = ±5V
70
0.01
0.1
1
10
FREQUENCY (MHz)
100
6200 G27
VS = 5V, 0V
VCM = VS/2
100
80
60
40
20
0
10k
100k
1M
10M
FREQUENCY (Hz)
100M
1G
6200 G28
62001fa
13
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Power Supply Rejection Ratio
vs Frequency
Overshoot vs Capacitive Load
VS = 5V, 0V
VCM = VS/2
TA = 25°C
70
35
60
VS = 5V, 0V
AV = 1
OVERSHOOT (%)
POSITIVE
SUPPLY
40
30
NEGATIVE
SUPPLY
20
RS = 20Ω
25
20
15
RS = 50Ω
RL = 50Ω
5
0
10k
1k
100k
1M
FREQUENCY (Hz)
10M
100
CAPACITIVE LOAD (pF)
10
–
VOUT
500Ω
+
100
1mV
VS = ±5V
AV = –1
TA = 25°C
1mV
VIN
500Ω
VOUT
+
1mV
50
10mV
10mV
0
10mV
0
–4
–3
–2
1
2
–1
0
OUTPUT STEP (V)
3
–4
4
–3
–2
1
2
–1
0
OUTPUT STEP (V)
6200 G32
3
4
Distortion vs Frequency, AV = 1
–90
HD3, RL = 100Ω
1M
FREQUENCY (Hz)
4
VS = ±5V
3 T = 25°C
A
HD2, HD3 < –40dBc
2
100k
1M
10k
FREQUENCY (Hz)
–50
–70
HD2, RL = 1k
–80
HD2, RL = 100Ω
–90
10M
6200 G35
–110
100k
10M
AV = 2
VO = 2VP-P
VS = ±2.5V
–60
–70
–80
HD2, RL = 100Ω
HD3, RL = 100Ω
HD2, RL = 1k
HD3, RL = 1k
–90
HD3, RL = 1k
–100
–100
HD3, RL = 100Ω
–110
100k
5
Distortion vs Frequency, AV = 2
DISTORTION (dBc)
HD3, RL = 1k
DISTORTION (dBc)
–80
–100
6
–40
AV = 1
VO = 2VP-P
–60 VS = ±5V
AV = 1
VO = 2VP-P
–60 VS = ±2.5V
HD2, RL = 100Ω
7
Distortion vs Frequency, AV = 1
HD2, RL = 1k
AV = 2
8
6200 G34
–50
–70
AV = –1
9
6200 G33
–50
DISTORTION (dBc)
10
–
1mV
1000
Maximum Undistorted Output
Signal vs Frequency
100
50
10mV
100
CAPACITIVE LOAD (pF)
6200 G31
500Ω
150
SETTLING TIME (ns)
SETTLING TIME (ns)
VIN
RS = 50Ω
RL = 50Ω
10
1000
Settling Time vs Output Step
(Inverting)
200
150
20
6200 G30
Settling Time vs Output Step
(Noninverting)
VS = ±5V
AV = 1
TA = 25°C
RS = 20Ω
30
0
0
100M
40
10
6200 G29
200
RS = 10Ω
RS = 10Ω
10
10
VS = 5V, 0V
AV = 2
50
30
50
Overshoot vs Capacitive Load
60
OVERSHOOT (%)
40
OUTPUT VOLTAGE SWING (VP-P)
POWER SUPPLY REJECTION RATIO (dB)
80
LT6200, LT6201
1M
FREQUENCY (Hz)
10M
6200 G36
–110
100k
1M
FREQUENCY (Hz)
10M
6200 G37
62001fa
14
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
LT6200, LT6201
Distortion vs Frequency, AV = 2
–40
AV = 2
VO = 2VP-P
VS = ±5V
–10
–20
TA = 25°C
AV = 1
VS = ±5V
–30
–60
VOLTAGE GAIN (dB)
DISTORTION (dBc)
–50
Channel Separation vs Frequency
0
HD2, RL = 100Ω
–70
HD2, RL = 1k
–80
HD3, RL = 1k
–90
–40
–50
–60
–70
–80
–90
–100
–100
HD3, RL = 100Ω
–110
100k
–110
1M
FREQUENCY (Hz)
10M
–120
0.1
1
10
FREQUENCY (MHz)
100
6200 G77
6200 G38
±5V Large-Signal Response
5V Large-Signal Response
5V
2V/DIV
1V/DIV
0V
0V
VS = 5V, 0V
AV = 1
RL = 1k
200ns/DIV
VS = ±5V
AV = 1
RL = 1k
6200 G39
VOUT
2V/DIV
6200 G41
5V Small-Signal Response
Output Overdrive Recovery
VIN
1V/DIV
200ns/DIV
50mV/DIV
0V
0V
VS = 5V, 0V
AV = 2
200ns/DIV
6200 G42
VS = 5V, 0V
AV = 1
RL = 1k
200ns/DIV
6200 G40
62001fa
15
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Gain Bandwidth and Phase Margin
vs Temperature
Slew Rate vs Temperature
450
80
400
70
350
50
1000
GAIN BANDWIDTH
900
VS = ±5V
800
VS = 3V, 0V
700
SLEW RATE (V/µs)
60
VS = 3V, 0V
AV = –5
RF = RL = 1k
RG = 200Ω
Overshoot vs Capacitive Load
60
VS = ±5V RISING
VS = ±5V FALLING
300
250
VS = ±2.5V FALLING
VS = ±2.5V RISING
200
600
0
25
75
50
TEMPERATURE (°C)
–25
0
25
50
75
TEMPERATURE (°C)
VS = 5V, 0V
TA = 25°C
VCM = VS /2
Open-Loop Gain vs Frequency
VS = 5V, 0V
30
20
70
AV = 5
1
1k
10k
100k
1M
FREQUENCY (Hz)
10M
1M
10M
FREQUENCY (Hz)
6200 G48
PHASE
VCM = 0.5V
10 VCM = 0V
0 CL = 5pF
RL = 1k
–10
1M
100k
20
0
30
–20
VCM = 0.5V
20
VS = 5V, 0V
CL = 5pF
RL = 1k
–10
100k
1M
–40
VCM = 4.5V
–100
1G
6200 G51
20
0
VS = ±1.5V
10M
100M
FREQUENCY (Hz)
Gain Bandwidth vs Resistor Load
90
900
80
800
PHASE MARGIN
70
60
50
1000
GAIN BANDWIDTH
800
600
400
700
600
500
400
300
200
100
0
0
2
4
8
10
6
TOTAL SUPPLY VOLTAGE (V)
1G
6200 G50
–60
–80
10M
100M
FREQUENCY (Hz)
GAIN BANDWIDTH (MHz)
GAIN (dB)
40
GAIN
40
0
60
PHASE (DEG)
50
10
80
VCM = 4.5V
60
100M
PHASE MARGIN (DEG)
70
TA = 25°C
RL = 1k
CL = 5pF
100
80
40
VS = ±5V
Gain Bandwidth and Phase Margin
vs Supply Voltage
120
90
60
GAIN
40
6200 G49
Open-Loop Gain vs Frequency
100
80
20
0.1
0.01
100k
100M
50
30
10
0
100
VS = ±5V
VS = ±1.5V
60
AV = 50
GAIN (dB)
OUTPUT IMPEDANCE (Ω)
40
120
PHASE
90
80
10
1000
100
100
50
100
CAPACITIVE LOAD (pF)
6200 G47
Output Impedance vs Frequency
1000
NEGATIVE
SUPPLY
60
10
PHASE (DEG)
POWER SUPPLY REJECTION RATIO (dB)
70
RS = 20Ω
6200 G46
Power Supply Rejection Ratio
vs Frequency
POSITIVE
SUPPLY
20
0
125
100
6200 G45
80
RS = 10Ω
RS = 50Ω
0
–55
125
100
30
10
GAIN BANDWIDTH (MHz)
–25
RS = 0Ω
40
150
100
500
–50
VS = 5V, 0V
AV = 5
50
OVERSHOOT (%)
90
PHASE MARGIN (DEG)
GAIN BANDWIDTH (MHz)
PHASE MARGIN
VS = ±5V
LT6200-5
12
6200 G52
VS = ±5V
RF = 10k
RG = 1k
TA = 25°C
0 100 200 300 400 500 600 700 800 900 1000
RESISTOR LOAD (Ω)
G200 G53
62001fa
16
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Common Mode Rejection Ratio
vs Frequency
Maximum Undistorted Output
Signal vs Frequency
10
VS = 5V, 0V
VCM = VS/2
OUTPUT VOLTAGE SWING (VP-P)
80
60
40
20
1M
10M
FREQUENCY (Hz)
100k
–40
9
100
0
10k
100M
1G
–50
8
7
6
5
4
3
2
VS = ±5V
1 AV = 5
TA = 25°C
0
100k
10k
1M
10M
FREQUENCY (Hz)
DISTORTION (dB)
100M
RL = 1k, 2ND
–70
RL = 1k, 3RD
–80
–100
10k
100k
1M
FREQUENCY (Hz)
10M
6200 G56
Output-Overdrive Recovery
5V
VIN
1V/DIV 0V
–60
RL = 100Ω, 2ND
–80
RL = 100Ω, 2ND
±5V Large-Signal Response
AV = 5
VO = 2VP-P
VS = ±5V
–70
RL = 100Ω, 3RD
–60
6200 G55
2nd and 3rd Harmonic Distortion
vs Frequency
–50
AV = 5
VO = 2VP-P
VS = ±2.5V
–90
6200 G54
–40
2nd and 3rd Harmonic Distortion
vs Frequency
DISTORTION (dB)
COMMON MODE REJECTION RATIO (dB)
120
LT6200-5
2V/DIV 0V
VOUT
2V/DIV
RL = 100Ω, 3RD
RL = 1k, 2ND
0V
– 5V
–90
RL = 1k, 3RD
–100
–110
10k
100k
1M
FREQUENCY (Hz)
10M
50ns/DIV
VS = ±5V
AV = 5
RL = 1k
CL = 10.8pF SCOPE PROBE
6200 G58
50ns/DIV
VS = 5V, 0V
AV = 5
CL = 10.8pF SCOPE PROBE
6200 G59
6200 G57
Input Referred High Frequency
Noise Spectrum
5V Small-Signal Response
10nV
50mV/DIV 0V
1nV/√Hz/DIV
VS = 5V, 0V
50ns/DIV
AV = 5
RL = 1k
CL = 10.8pF SCOPE PROBE
6200 G61
0nV
100kHz
15MHz/DIV
150MHz
6200 G60
NOISE LIMITED BY INSTRUMENT NOISE FLOOR
62001fa
17
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Gain Bandwidth and Phase Margin
vs Temperature
Slew Rate vs Temperature
650
50
2000
GAIN BANDWIDTH
1800
VS = ±5V
1600
1400
SLEW RATE (v/µs)
VS = 3V, 0V
600
PHASE MARGIN (DEG)
GAIN BANDWIDTH (MHz)
60
AV = –10
RF = RL = 1k
RG = 100Ω
500
400
VS = ±2.5V FALLING
200
1000
–50
150
–50
0
25
50
75
TEMPERATURE (°C)
125
100
RS = 50Ω
50
25
0
75
TEMPERATURE (°C)
–25
100
30
20
VS = 5V, 0V
0
10M
AV = 100
10
1
30
20
GAIN
VCM = 4.5V
0
VCM = 0.5V
–20
–40
20
10 VS = 5V, 0V
0 CL = 5pF
RL = 1k
–10
1M
100k
GAIN BANDWIDTH (MHz)
GAIN (dB)
40
40
1G
6200 G68
90
80
1600
60
1800
50
1600
GAIN BANDWIDTH
1400
–80
1200
–100
1000
1200
1000
800
600
400
0
2
4
8
10
6
TOTAL SUPPLY VOLTAGE (V)
1G
1400
200
0
10M
100M
FREQUENCY (Hz)
Gain Bandwidth vs Resistor Load
1800
70
PHASE MARGIN
–60
10M
100M
FREQUENCY (Hz)
0
VS = ±5V
6200 G67
PHASE MARGIN (DEG)
50
80
PHASE (DEG)
60
VS = ±1.5V
10 VCM = 0V
0 CL = 5pF
RL = 1k
–10
1M
100k
100M
1M
10M
FREQUENCY (Hz)
TA = 25°C
RL = 1k
CL = 5pF
60
20
20
0.1
100
VCM = 4.5V
40
GAIN
40
6200 G66
VCM = 0.5V
70
50
30
120
80
60
Gain Bandwidth and Phase Margin
vs Supply Voltage
PHASE
80
VS = ±1.5V
60
AV = 10
Open-Loop Gain vs Frequency
90
VS = ±5V
70
6200 G65
100
100
PHASE
80
0.01
100k
100M
120
90
10
100k
1M
FREQUENCY (Hz)
1000
Open-Loop Gain vs Frequency
GAIN (dB)
OUTPUT IMPEDANCE (Ω)
40
10k
100
CAPACITIVE LOAD (pF)
100
100
50
1k
10
6200 G64
Output Impedance vs Frequency
1000
VS = 5V, 0V
TA = 25°C
VCM = VS /2
NEGATIVE
SUPPLY
60
0
125
PHASE (DEG)
POWER SUPPLY REJECTION RATIO (dB)
70
20
6200 G63
Power Supply Rejection Ratio
vs Frequency
POSITIVE
SUPPLY
RS = 10Ω
30
10
6200 G62
80
40
RS = 20Ω
VS = ±2.5V RISING
250
1200
–25
RS = 0Ω
450
350
VS = 5V, 0V
AV = 10
50
VS = ±5V FALLING
550
300
VS = 3V, 0V
VS = ±5V RISING
GAIN BANDWIDTH (MHz)
PHASE MARGIN
700
70
Overshoot vs Capacitive Load
60
OVERSHOOT (%)
750
80
VS = ±5V
LT6200-10
12
6200 G69
VS = ±5V
RF = 10k
RG = 1k
TA = 25°C
0 100 200 300 400 500 600 700 800 900 1000
RESISTOR LOAD (Ω)
G200 G70
62001fa
18
LT6200/LT6200-5
LT6200-10/LT6201
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Common Mode Rejection Ratio
vs Frequency
Maximum Undistorted Output
Signal vs Frequency
60
40
20
1M
10M
FREQUENCY (Hz)
100M
–50
8
7
DISTORTION (dB)
80
100k
–40
9
100
0
10k
6
5
4
3
2
VS = ±5V
1 AV = 10
TA = 25°C
0
100k
10k
1G
DISTORTION (dB)
AV = 10
VO = 2VP-P
VS = ±5V
–60
–60
–70
RL = 100Ω, 2ND
RL = 100Ω, 3RD
RL = 1k, 3RD
–80
RL = 1k, 2ND
1M
10M
FREQUENCY (Hz)
100M
–100
10k
100k
1M
FREQUENCY (Hz)
10M
6200 G72
2nd and 3rd Harmonic Distortion
vs Frequency
–50
AV = 10
VO = 2VP-P
VS = ±2.5V
–90
6200 G71
–40
2nd and 3rd Harmonic Distortion
vs Frequency
10
VS = 5V, 0V
VCM = VS/2
OUTPUT VOLTAGE SWING (VP-P)
COMMON MODE REJECTION RATIO (dB)
120
LT6200-10
6200 G73
±5V Large-Signal Response
Output-Overdrive Recovery
5V
VIN
1V/DIV 0V
RL = 100Ω, 2ND
RL = 100Ω, 3RD
2V/DIV 0V
–70
VOUT
2V/DIV
RL = 1k, 3RD
–80
0V
–5V
–90
–100
–110
10k
RL = 1k, 2ND
100k
1M
FREQUENCY (Hz)
10M
50ns/DIV
VS = ±5V
AV = 10
RL = 1k
CL = 10.8pF SCOPE PROBE
6200 G75
VS = 5V, 0V
50ns/DIV
AV = 10
CL = 10.8pF SCOPE PROBE
6200 G76
6200 G74
Input Referred High Frequency
Noise Spectrum
5V Small-Signal Response
10nV
50mV/DIV 0V
1nV/√Hz/DIV
VS = 5V, 0V
50ns/DIV
AV = 10
RL = 1k
CL = 10.8pF SCOPE PROBE
6200 G78
0nV
100kHz
15MHz/DIV
150MHz
6200 G77
62001fa
19
LT6200/LT6200-5
LT6200-10/LT6201
U
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APPLICATIO S I FOR ATIO
Amplifier Characteristics
Figure 1 shows a simplified schematic of the LT6200
family, which has two input differential amplifiers in parallel that are biased on simultaneously when the common
mode voltage is at least 1.5V from either rail. This topology
allows the input stage to swing from the positive supply
voltage to the negative supply voltage. As the common
mode voltage swings beyond VCC – 1.5V, current source
I1 saturates and current in Q1/Q4 is zero. Feedback is
maintained through the Q2/Q3 differential amplifier, but
with an input gm reduction of 1/2. A similar effect occurs
with I2 when the common mode voltage swings within
1.5V of the negative rail. The effect of the gm reduction is
a shift in the VOS as I1 or I2 saturate.
Input bias current normally flows out of the + and – inputs.
The magnitude of this current increases when the input
common mode voltage is within 1.5V of the negative rail,
and only Q1/Q4 are active. The polarity of this current
reverses when the input common mode voltage is within
1.5V of the positive rail and only Q2/Q3 are active.
The second stage is a folded cascode and current mirror
that converts the input stage differential signals to a single
ended output. Capacitor C1 reduces the unity cross
frequency and improves the frequency stability without
degrading the gain bandwidth of the amplifier. The
differential drive generator supplies current to the output
transistors that swing from rail-to-rail.
The LT6200-5/LT6200-10 are decompensated op amps for
higher gain applications. These amplifiers maintain identical DC specifications with the LT6200, but have a reduced
Miller compensation capacitor CM. This results in a significantly higher slew rate and gain bandwidth product.
Input Protection
There are back-to-back diodes, D1 and D2, across the
+ and – inputs of these amplifiers to limit the differential
input voltage to ±0.7V. The inputs of the LT6200 family do
not have internal resistors in series with the input transistors. This technique is often used to protect the input
devices from overvoltage that causes excessive currents
to flow. The addition of these resistors would significantly
degrade the low noise voltage of these amplifiers. For
instance, a 100Ω resistor in series with each input would
generate 1.8nV/√Hz of noise, and the total amplifier noise
voltage would rise from 0.95nV/√Hz to 2.03nV/√Hz. Once
the input differential voltage exceeds ±0.7V, steady-state
current conducted though the protection diodes should be
limited to ±40mA. This implies 25Ω of protection resistance per volt of continuous overdrive beyond ±0.7V. The
input diodes are rugged enough to handle transient currents due to amplifier slew rate overdrive or momentary
clipping without these resistors.
Figure 2 shows the input and output waveforms of the
LT6200 driven into clipping while connected in a gain of
V+
R1
R2
DESD7
VSHDN
BIAS
I1
DESD8
Q11
–V
+V
Q6
Q5
DESD1
–V
CM
DESD2
Q1
+
D1
Q2
Q3
+V
Q4
C1
+V
D2
–
DESD3
DESD4
–V
DESD5
DIFFERENTIAL
DRIVE
GENERATOR
Q9
DESD6
Q7
Q8
+V
Q10 –V
R3
R4
I2
R5
D3
V–
6203/04 F01
Figure 1. Simplified Schematic
62001fa
20
LT6200/LT6200-5
LT6200-10/LT6201
U
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APPLICATIO S I FOR ATIO
AV = 1. In this photo, the input signal generator is clipping
at ±35mA, and the output transistors supply this generator current through the protection diodes.
VCC
2.5V
0V
VEE
–2.5V
Figure 2. VS = ±2.5V, AV = 1 with Large Overdrive
ESD
The LT6200 has reverse-biased ESD protection diodes on
all inputs and outputs as shown in Figure 1. If these pins
are forced beyond either supply, unlimited current will
flow through these diodes. If the current is transient and
limited to 30mA or less, no damage to the device will
occur.
Noise
The noise voltage of the LT6200 is equivalent to that of a
56Ω resistor, and for the lowest possible noise it is
desirable to keep the source and feedback resistance
at or below this value, i.e., RS + RG//RFB ≤ 56Ω. With
RS + RG//RFB = 56Ω the total noise of the amplifier is:
en = √(0.95nV)2 + (0.95nV)2 = 1.35nV. Below this resistance value, the amplifier dominates the noise, but in the
resistance region between 56Ω and approximately 6kΩ,
the noise is dominated by the resistor thermal noise. As
the total resistance is further increased, beyond 6k, the
noise current multiplied by the total resistance eventually
dominates the noise.
For a complete discussion of amplifier noise, see the
LT1028 data sheet.
Power Dissipation
The LT6200 combines high speed with large output current in a small package, so there is a need to ensure that
the die’s junction temperature does not exceed 150°C. The
LT6200 is housed in a 6-lead TSOT-23 package. The
package has the V – supply pin fused to the lead frame to
enhance the thermal conductance when connecting to a
ground plane or a large metal trace. Metal trace and plated
through-holes can be used to spread the heat generated by
the device to the backside of the PC board. For example, on
a 3/32" FR-4 board with 2oz copper, a total of 270 square
millimeters connects to Pin␣ 2 of the LT6200 in an TSOT-23
package will bring the thermal resistance, θJA, to about
135°C/W. Without extra metal trace beside the power line
connecting to the V – pin to provide a heat sink, the thermal
resistance will be around 200°C/W. More information on
thermal resistance with various metal areas connecting to
the V – pin is provided in Table 1.
Table 1. LT6200 6-Lead TSOT-23 Package
COPPER AREA
TOPSIDE (mm2)
BOARD AREA
(mm2)
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)
270
2500
135°C/W
100
2500
145°C/W
20
2500
160°C/W
0
2500
200°C/W
Device is mounted on topside.
Junction temperature TJ is calculated from the ambient
temperature TA and power dissipation PD as follows:
TJ = TA + (PD • θJA)
The power dissipation in the IC is the function of the supply
voltage, output voltage and the load resistance. For a given
supply voltage, the worst-case power dissipation PD(MAX)
occurs at the maximum quiescent supply current and at
the output voltage which is half of either supply voltage (or
the maximum swing if it is less than 1/2 the supply
voltage). PD(MAX) is given by:
PD(MAX) = (VS • IS(MAX)) + (VS/2)2/RL
Example: An LT6200 in TSOT-23 mounted on a 2500mm 2
area of PC board without any extra heat spreading plane
connected to its V – pin has a thermal resistance of
62001fa
21
LT6200/LT6200-5
LT6200-10/LT6201
U
W
U
U
APPLICATIO S I FOR ATIO
200°C/W, θJA. Operating on ±5V supplies driving 50Ω
loads, the worst-case power dissipation is given by:
PD(MAX) = (10 • 23mA) + (2.5)2/50
= 0.23 + 0.125 = 0.355W
The maximum ambient temperature that the part is
allowed to operate is:
TA = TJ – (PD(MAX) • 200°C/W)
PCB. Table 2 summarizes the thermal resistance from the
die junction-to-ambient that can be obtained using various
amounts of topside metal (2oz copper) area. On mulitlayer
boards, further reductions can be obtained using additional metal on inner PCB layers connected through vias
beneath the package.
Table 2. LT6200 8-Lead DD Package
COPPER AREA
TOPSIDE (mm2)
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)
= 150°C – (0.355W • 200°C/W) = 79°C
To operate the device at higher ambient temperature,
connect more metal area to the V – pin to reduce the
thermal resistance of the package as indicated in Table 1.
4
160°C/W
16
135°C/W
32
110°C/W
64
95°C/W
130
70°C/W
DD Package Heat Sinking
The underside of the DD package has exposed metal
(4mm2) from the lead frame where the die is attached. This
provides for the direct transfer of heat from the die
junction to printed circuit board metal to help control the
maximum operating junction temperature. The dual-inline pin arrangement allows for extended metal beyond the
ends of the package on the topside (component side) of a
The LT6200 amplifier family has thermal shutdown to
protect the part from excessive junction temperature. The
amplifier will shut down to approximately 1.2mA supply
current per amplifier if the maximum temperature is
exceeded. The LT6200 will remain off until the junction
temperature reduces to about 135°C, at which point the
amplifier will return to normal operation.
U
PACKAGE DESCRIPTIO
DD Package
8-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1698)
R = 0.115
TYP
5
0.38 ± 0.10
8
0.675 ±0.05
3.5 ±0.05
1.65 ±0.05
2.15 ±0.05 (2 SIDES)
3.00 ±0.10
(4 SIDES)
PACKAGE
OUTLINE
1.65 ± 0.10
(2 SIDES)
PIN 1
TOP MARK
(DD8) DFN 0203
0.28 ± 0.05
0.200 REF
0.50
BSC
2.38 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.75 ±0.05
0.00 – 0.05
4
0.28 ± 0.05
1
0.50 BSC
2.38 ±0.10
(2 SIDES)
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
62001fa
22
LT6200/LT6200-5
LT6200-10/LT6201
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62
MAX
0.95
REF
2.90 BSC
(NOTE 4)
1.22 REF
2.80 BSC
1.4 MIN
3.85 MAX 2.62 REF
1.50 – 1.75
(NOTE 4)
PIN ONE ID
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
.189 – .197
(4.801 – 5.004)
NOTE 3
.045 ±.005
.050 BSC
8
.245
MIN
7
6
5
.160 ±.005
.150 – .157
(3.810 – 3.988)
NOTE 3
.228 – .244
(5.791 – 6.197)
.030 ±.005
TYP
1
RECOMMENDED SOLDER PAD LAYOUT
.010 – .020
× 45°
(0.254 – 0.508)
.008 – .010
(0.203 – 0.254)
0°– 8° TYP
.016 – .050
(0.406 – 1.270)
NOTE:
1. DIMENSIONS IN
.053 – .069
(1.346 – 1.752)
.014 – .019
(0.355 – 0.483)
TYP
INCHES
(MILLIMETERS)
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
2
3
4
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
SO8 0303
62001fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
23
LT6200/LT6200-5
LT6200-10/LT6201
U
TYPICAL APPLICATIO
Rail-to-Rail High Speed Low Noise Instrumentation Amplifier
+
100Ω
LT6200-10
1k
–
604Ω
+
49.9Ω
49.9Ω
VOUT
LT6200-10
150pF
49.9Ω
–
604Ω
1k
–
AV = 10
100Ω
LT6200-10
+
AV = 13
6200 TA03
Instrumentation Amplifier Frequency Response
3dB/DIV
42.3dB
10
100
FREQUENCY (MHz)
6200 TA04
AV = 130
BW–3dB = 85MHz
SLEW RATE = 500V/µs
CMRR = 55dB at 10MHz
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT1028
Single, Ultra Low Noise 50MHz Op Amp
1.1nV/√Hz
LT1677
Single, Low Noise Rail-to-Rail Amplifier
3V Operation, 2.5mA, 4.5nV/√Hz, 60µV Max V0S
LT1722/LT1723/LT1724
Single/Dual/Quad Low Noise Precision Op Amp
70V/µs Slew Rate, 400µV Max VOS, 3.8nV/√Hz, 3.7mA
LT1806/LT1807
Single/Dual, Low Noise 325MHz Rail-to-Rail Amplifier
2.5V Operation, 550µV Max VOS, 3.5nV/√Hz
LT6203
Dual, Low Noise, Low Current Rail-to-Rail Amplifier
1.9nV/√Hz, 3mA Max, 100MHz Gain Bandwidth
62001fa
24
Linear Technology Corporation
LT/TP 1103 1K REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507 ● www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2002