ETC RMWM26001

RMWM26001
26 GHz Mixer MMIC
PRODUCT INFORMATION
Description
Features
The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWM26001 is a
GaAs MMIC diode mixer utilizing Raytheon’s 0.25µm power PHEMT process. The MMIC can be used as both an
Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.
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‹
‹
‹
‹
4 mil substrate
Conversion loss 7.5 dB (Upconverter)
Conversion loss 8.5 dB (Downconverter)
No DC bias required
Chip size 1.95 mm x 1.5 mm
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25°C),
50 Ω system,
LO = +12 dBm
Application
Information
Parameter
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Parameter
Min
RF Frequency Range
21
LO Frequency Range
IF Frequency Range
(Up-Conv)
IF Frequency Range
(Down-Conv)
LO Drive Power
Up Conversion Loss
Down Conversion Loss1
Conversion Loss
Variation vs Freq.
Typ
Value
Units
PIN
TC
Tstg
+25
-30 to +85
-55 to +125
dBm
°C
°C
17 - 24.1
Unit
GHz
GHz
4.02 - 4.12
GHz
2.552 - 2.602
12
7.5
8.5
2
Max
26.5
Symbol
16
10
GHz
dBm
dB
dB
Parameter
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO to RF Isolation
LO to IF Isolation
Input P1dB at IF Port
(Up-Conv)
Input P1dB at RF Port
(Down-Conv)
Min
Typ
12
10
8
20
35
Max Unit
dB
dB
dB
dB
dB
8
dBm
9
dBm
dB
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Note:
1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 2.6 GHz.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWM26001
26 GHz Mixer MMIC
PRODUCT INFORMATION
Figure 1
Functional Block
Diagram
Up-Conversion
Down-Conversion
MMIC Chip
MMIC Chip
RF OUT
IF IN
Ground
(Back of Chip)
Figure 2
Chip Layout and Bond
Pad Locations
RF IN
Ground
(Back of Chip)
LO IN
IF OUT
LO IN
Dimensions in mm
0.0
0.831
0.986 1.141
1.95
1.5
1.5
Chip Size is 1.95 mm x
1.5 mm x 100 µm. Back
of chip is RF ground
0.3225
0.323
0.1805
0.18
0.0
0.0
0.0
1.95
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWM26001
26 GHz Mixer MMIC
PRODUCT INFORMATION
Figure 3
Recommended
Assembly Diagram
IF Input
/Output
5 mil Thick
Alumina
50-Ohm
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
5mil Thick
Alumina
50-Ohm
LO
Input
RF Input
/Output
L< 0.015”
(6 Places)
2 mil Gap
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Recommended
Procedure for
Operation
The RMWM26001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input
drive level.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWM26001
26 GHz Mixer MMIC
PRODUCT INFORMATION
Performance
Data
RMWM26001 26 GHz Mixer On-Wafer Performance UpConverter
0
Conversion Gain (dB)
-2
-4
-6
-8
-10
21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
26000
26500
Frequency (GHz)
RMWM26001 26 GHz Mixer Typical On-Wafer Performance DownConverter
0
Conversion Gain (dB)
-2
-4
-6
-8
-10
21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
RF Input Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWM26001
26 GHz Mixer MMIC
PRODUCT INFORMATION
Performance
Data
RMWL26001 26 GHz Mixer Typical Return Loss Performance
Measurements Include 50 Ohm Test Fixture
0
-2
LO, IF and RF Port Return Loss (dB)
-4
-6
RF Port
IF Port
-8
-10
-12
LO Port
-14
-16
-18
-20
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
24
24.5
LO Frequency (GHz)
RMWL26001 26 GHz Mixer Typical Isolation Performance
Measurements Include 50 Ohm Test Fixture
0
-5
Isolation (dB)
-10
-15
-20
LO-RF Isolation U/C
-25
-30
LO-IF Isolation D/C
-35
-40
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
LO Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Worldwide Sales
Representatives
PRODUCT INFORMATION
North America
Europe
D&L Technical Sales
6139 S. Rural Road, #102
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
[email protected]
Midwin & Olifison
5567 Resada Blvd, Suite 315
Tarzana, CA 91356
818-996-9093
fax: 818-996-9650
Ronald Midwin
[email protected]
TEQ Sales, Inc.
920 Davis Road, Suite 304
Elgin, IL 60123
847-742-3767
fax: 847-742-3947
Dennis Culpepper
[email protected]
Steward Technology
89 St. Beatrice Ct.
Danville, CA 94526
408-568-9159
fax: 925-820-7481
John Steward
[email protected]
Spartech South
2115 Palm Bay Road, NE,
Suite 4
Palm Bay, FL 32904
321-727-8045
fax: 321-727-8086
Jim Morris
[email protected]
Hi-Peak Technical Sales
P.O. Box 6067
Amherst, NH 03031
866-230-5453
fax: 603-672-9228
sales@hi–peak.com
Sangus OY
Lunkintie 21,
90460 Oulunsalo
Finland
358-8-8251-100
fax: 358-8-8251-110
Juha Virtala
[email protected]
MTI Engineering Limited
Afek Industrial Park
Hamelacha 11
New Industrial Area
Rosh Hayin 48091
Israel
972-3-902-5555
fax: 972-3-902-5556
Adi Peleg
[email protected]
Sirces srl
Via C. Boncompagni, 3B
20139 Milano
Italy
3902-57404785
fax: 3902-57409243
Nicola Iacovino
[email protected]
Globes Elektronik & Co.
Klarastrabe 12
74072 Heilbronn
Germany
49-7131-7810-0
fax: 49-7131-7810-20
Ulrich Blievernicht
[email protected]
Asia
Sales Office
Headquarters
Customer
Support
ITX Corporation
2–5, Kasumigaseki 3– Chome
Chiyoda–Ku
Tokyo 100-6014 Japan
81-3-4288-7073
fax: 81-3-4288-7243
Maekawa Ryosuke
maekawa.ryosuke@itx–corp.co.jp
Sea Union
10F, Building A, No 116
Sec 1, Hsin-Tai 5th Road
Hsichih, Taipei, Taiwan, ROC
886-2-2696-2986
fax: 886-2-2696-3061
Murphy Su
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Cantec Representatives
8 Strathearn Ave, No. 18
Brampton, Ontario
Canada L6T 4L9
905-791-5922
fax: 905-791-7940
Dave Batten
[email protected]
Technical Marketing Inc.
3320 Wiley Post Road
Carrollton, TX 75006
972-387-3601
fax: 972-387-3605
Bill Stoffregen
[email protected]
Sangus AB
Berghamnvagen 68
Box 5004
S–165 10 Hasselby
Sweden
Ronny Gustafson
468-0-380210
fax: 468-0-3720954
Worldwide Distributor
AVNET-MCS
6321 San Ignacio Drive
San Jose, CA 95119
408-360-4073
fax: 408-281-8802
Art Herbig
[email protected]
United States
United States
Europe
Asia
(East Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
wshelmet
@rrfc.raytheon.com
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair
@rrfc.raytheon.com
Raytheon
AM Teckenberg 53
40883 Ratingen
Germany
49-2102-706-155
fax: 49-2102-706-156
Peter Hales
peter_j_hales
@raytheon.com
Raytheon
Room 601, Gook Je Ctr. Bldg
191 Hangang Ro 2-GA
Yongsan-Gu, Seoul,
Korea 140-702
82-2-796-5797
fax: 82-2-796-5790
T.G. Lee
[email protected]
978-684-8900
fax: 978-684-5452
[email protected]
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810