RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWM26001 is a GaAs MMIC diode mixer utilizing Raytheon’s 0.25µm power PHEMT process. The MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications. 4 mil substrate Conversion loss 7.5 dB (Upconverter) Conversion loss 8.5 dB (Downconverter) No DC bias required Chip size 1.95 mm x 1.5 mm Absolute Maximum Ratings Electrical Characteristics (At 25°C), 50 Ω system, LO = +12 dBm Application Information Parameter RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Parameter Min RF Frequency Range 21 LO Frequency Range IF Frequency Range (Up-Conv) IF Frequency Range (Down-Conv) LO Drive Power Up Conversion Loss Down Conversion Loss1 Conversion Loss Variation vs Freq. Typ Value Units PIN TC Tstg +25 -30 to +85 -55 to +125 dBm °C °C 17 - 24.1 Unit GHz GHz 4.02 - 4.12 GHz 2.552 - 2.602 12 7.5 8.5 2 Max 26.5 Symbol 16 10 GHz dBm dB dB Parameter RF Port Return Loss LO Port Return Loss IF Port Return Loss LO to RF Isolation LO to IF Isolation Input P1dB at IF Port (Up-Conv) Input P1dB at RF Port (Down-Conv) Min Typ 12 10 8 20 35 Max Unit dB dB dB dB dB 8 dBm 9 dBm dB CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. Note: 1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 2.6 GHz. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Figure 1 Functional Block Diagram Up-Conversion Down-Conversion MMIC Chip MMIC Chip RF OUT IF IN Ground (Back of Chip) Figure 2 Chip Layout and Bond Pad Locations RF IN Ground (Back of Chip) LO IN IF OUT LO IN Dimensions in mm 0.0 0.831 0.986 1.141 1.95 1.5 1.5 Chip Size is 1.95 mm x 1.5 mm x 100 µm. Back of chip is RF ground 0.3225 0.323 0.1805 0.18 0.0 0.0 0.0 1.95 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Figure 3 Recommended Assembly Diagram IF Input /Output 5 mil Thick Alumina 50-Ohm Die-Attach 80Au/20Sn 5 mil Thick Alumina 50-Ohm 5mil Thick Alumina 50-Ohm LO Input RF Input /Output L< 0.015” (6 Places) 2 mil Gap Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Recommended Procedure for Operation The RMWM26001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input drive level. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Performance Data RMWM26001 26 GHz Mixer On-Wafer Performance UpConverter 0 Conversion Gain (dB) -2 -4 -6 -8 -10 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 26000 26500 Frequency (GHz) RMWM26001 26 GHz Mixer Typical On-Wafer Performance DownConverter 0 Conversion Gain (dB) -2 -4 -6 -8 -10 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 RF Input Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Performance Data RMWL26001 26 GHz Mixer Typical Return Loss Performance Measurements Include 50 Ohm Test Fixture 0 -2 LO, IF and RF Port Return Loss (dB) -4 -6 RF Port IF Port -8 -10 -12 LO Port -14 -16 -18 -20 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 23.5 24 24.5 24 24.5 LO Frequency (GHz) RMWL26001 26 GHz Mixer Typical Isolation Performance Measurements Include 50 Ohm Test Fixture 0 -5 Isolation (dB) -10 -15 -20 LO-RF Isolation U/C -25 -30 LO-IF Isolation D/C -35 -40 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 23.5 LO Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION North America Europe D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. [email protected] Midwin & Olifison 5567 Resada Blvd, Suite 315 Tarzana, CA 91356 818-996-9093 fax: 818-996-9650 Ronald Midwin [email protected] TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected] Steward Technology 89 St. Beatrice Ct. Danville, CA 94526 408-568-9159 fax: 925-820-7481 John Steward [email protected] Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected] Hi-Peak Technical Sales P.O. 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Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee [email protected] 978-684-8900 fax: 978-684-5452 [email protected] Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810