May 2003 AO7407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -20V ID = -1.2 A RDS(ON) < 135mΩ (VGS = -4.5V) RDS(ON) < 170mΩ (VGS = -2.5V) RDS(ON) < 220mΩ (VGS = -1.8V) D SC-70 SOT 323 Top View G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V -10 0.35 W 0.22 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -1.0 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -1.2 TA=25°C Power Dissipation A Maximum -20 RθJA RθJL Typ 300 350 280 Max 360 425 320 Units °C/W °C/W °C/W AO7407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage RDS(ON) gFS VSD IS On state drain current Static Drain-Source On-Resistance Conditions Min ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-1.2A -0.3 -10 TJ=125°C VGS=-2.5V, ID=-1A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A Coss Crss Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=-10V, f=1MHz Rg Gate resistance VGS=0V, VDS=0V, f=1MHz tD(off) tf trr Qrr VGS=-4.5V, VDS=-10V, ID=-1A Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-4.5V, VDS=-10V, RL=15Ω, RGEN=3Ω IF=-1A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/µs Units V TJ=55°C DYNAMIC PARAMETERS Ciss Input Capacitance tD(on) tr Max -1 Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Typ 4 µA -0.55 -5 ±100 -1 111 141 137 135 175 170 mΩ 169 7 220 mΩ -0.78 -1 -0.6 V A nA V A mΩ S 540 72 pF pF 49 12 pF Ω 6.2 0.54 nC nC 1.44 12 nC ns 10.7 74 28.7 ns ns ns 24.5 17.4 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO7407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V 5 -2.5V -8V 25°C 4 10 125°C -ID(A) -ID (A) -2.0V 3 2 5 VGS=-1.5V 1 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 225 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance VGS=-1.8V 175 150 VGS=-2.5V 125 VGS=-4.5V 100 75 VGS=-2.5V ID=-1A 1.4 VGS=-1.8V VGS=-4.5V 1.2 1 0.8 0 2 4 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 225 1E+01 200 1E+00 125° ID=-1A 175 1E-01 150 -IS (A) RDS(ON) (mΩ) 2.5 1.6 200 RDS(ON) (mΩ) 0.5 125°C 125 25°C 1E-02 1E-03 25°C 100 1E-04 75 1E-05 1 2 3 4 5 6 7 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO7407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-1.0A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 12 100µs 10.0 10µs RDS(ON) limited 1ms 10ms 1.0 0.1s 1s 10s 1 10 100 6 4 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 8 0 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=360°C/W PD 0.1 Ton Single Pulse 0.01 0.00001 20 2 DC 0.1 15 TJ(Max)=150°C TA=25°C 10 Power (W) -ID (Amps) TJ(Max)=150°C TA=25°C 1 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 5 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 SC-70 3L Package Data θ SYMBOLS A A1 A2 b C D E E1 F e e1 L θ1 DIMENSIONS IN MILLIMETERS MIN MAX 0.90 1.10 0.00 0.10 0.90 1.00 0.25 0.40 0.10 0.20 1.80 2.20 1.15 1.35 2.00 2.20 0.30 0.40 0.65 BSC 1.30 BSC 0.10 0.30 1° 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. OTHER NAME OF THIS PACKAGE IS CALLED SOT-323 PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN PNW LT SC-70 3L PART NO. CODE PART NO. CODE AO7407 7 NOTE: P - PART NUMBER CODE. N - FOUNDRY AND ASSEMBLY LOCATION CODE W - YAER AND WEEK CODE. L T - ASSEMBLY LOT CODE. Rev. A SC-70 3L Tape and Reel Data SC-70 3L Carrier Tape SC-70 3L Reel SC-70 3L Tape Leader / Trailer & Orientation