March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 80 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 10 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 12 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 23 48 12 Max 40 65 16 Units °C/W °C/W °C/W AO4402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 60 TJ=55°C 5 VGS=10V, ID=12A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A VGS=4.5V, ID=10A 13.1 16 mΩ VGS=2.5V, ID=8A 21 26 mΩ VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 1.2 14 IS=10A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA 19.2 Forward Transconductance Output Capacitance 100 16 VSD Coss 0.8 µA 11.1 TJ=125°C gFS IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz 25 50 0.8 mΩ S 1 V 4.5 A 1630 pF 201 pF 142 pF VGS=0V, VDS=0V, f=1MHz 0.8 Ω 19 nC VGS=4.5V, VDS=15V, ID=12A 3.3 nC Qgd Gate Drain Charge 5.2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 4.7 ns 33.5 ns 6 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 11 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 4.5V 25 3V 30 2.5V 2V VDS=5V 20 ID(A) ID (A) 30 10V 20 15 125°C 10 10 VGS=1.5V 25°C 5 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 2 2.5 3 Normalized On-Resistance 1.8 20 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics 25 VGS=2.5V 15 VGS=4.5V 10 VGS=10V 5 0 VGS=10V ID=10A 1.6 VGS=4.5V 1.4 VGS=2.5V 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 40.0 ID=10A 1.0E+00 IS (A) 125°C 20.0 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 10.0 VGS=0V 1.0E+01 30.0 RDS(ON) (mΩ) 1 1.0E-04 1.0E-05 0.0 0.0 2.0 4.0 6.0 8.0 10.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 5 VDS=15V ID=12A 2000 Capacitance (pF) VGS (Volts) 4 2250 3 2 1 1750 Ciss 1500 1250 1000 750 Coss 500 Crss 250 0 0 4 8 12 16 20 0 24 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 50 RDS(ON) limited 1ms 100µs 10.0 10ms 0.1s 1s 1.0 10s TJ(Max)=150°C TA=25°C 1 20 0 0.001 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 30 10 DC 0.1 0.1 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION NOTE: LG PARTN F A Y W LN RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE UNIT: mm PART NO. AO4400 AO4401 CODE 4400 4401 PART NO. AO4800 AO4801 CODE 4800 4801 PART NO. AO4700 AO4701 CODE 4700 4701 MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data