MIG200J6CMB1W MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG200J6CMB1W (600V/200A 6in1) High Power Switching Applications Motor Control Applications • Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. • The electrodes are isolated from the case • Low thermal resistance • VCE (sat) = 2.0 V (typ.) • UL recognized: File No.E87989 • Weight: 385 g (typ.) Equivalent Circuit 20 19 FO IN VD GND GND VS OUT 18 17 VD (U) 8. 15. 15 14 13 12 11 10 9 8 7 6 5 FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND GND GND GND VS OUT W 1. 16 VS OUT V VS OUT VS 4 3 2 1 GND IN FO VD OUT GND U VS OUT N 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) P FO (V) 7. IN (V) 13. VD (L) 14. FO (L) 20. GND (L) 2004-10-01 1/10 MIG200J6CMB1W Package Dimensions Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 2/10 MIG200J6CMB1W Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 3/10 MIG200J6CMB1W Maximum Ratings (Tj = 25°C) Stage Characteristics Condition Supply voltage Symbol Rating Unit P-N Power terminal VCC 450 V ⎯ VCES 600 V Collector-emitter voltage Inverter Collector current Tc = 25°C, DC IC 200 A Forward current Tc = 25°C, DC IF 200 A Collector power dissipation Tc = 25°C, DC PC 1000 W ⎯ Junction temperature Control Module Tj 150 °C Control supply voltage VD-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Fault output current FO sink current IFO 10 mA Operating temperature ⎯ Tc −20~+100 °C Storage temperature Range ⎯ Tstg −40~+125 °C VISO 2500 V ⎯ 3 N•m Isolation voltage AC 1 min Screw torque M5 Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICES VCE (sat) VF Test Condition VCE = 600 V VD = 15 V, IC = 200 A, VIN = 15 V → 0 V Min Typ. Max Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C 1.7 2.0 2.4 Tj = 125°C ⎯ 2.2 ⎯ ⎯ 2.2 2.6 ⎯ 2.0 2.9 IF = 200 A, Tj = 25°C ton tc (on) Switching time trr toff tc (off) VCC = 300 V, IC = 200 A VD = 15 V, VIN = 3 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) ⎯ 0.4 ⎯ ⎯ 0.2 ⎯ ⎯ 1.3 2.3 ⎯ 0.2 ⎯ Unit mA V V µs Note 1: Switching time test circuit & timing chart 2004-10-01 4/10 MIG200J6CMB1W 2. Control stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Test Condition VD = 15 V VD = 15 V Min Typ. Max ⎯ 13 17 ⎯ 39 51 1.4 1.6 1.8 2.2 2.5 2.8 ⎯ 10 12 ⎯ ⎯ 0.1 Unit mA V Protection IFO (on) Normal IFO (off) Inverter OC VD = 15 V, Tj < = 125°C 320 ⎯ ⎯ A Short circuit protection trip Inverter level SC VD = 15 V, Tj < = 125°C 320 ⎯ ⎯ A µs Fault output current Over current protection trip level Over current cut-off time toff (OC) Over temperature protection Trip level OT Reset level OTr Control supply under voltage protection Trip level UV Reset level UVr Fault output pulse width tFO VD = 15 V VD = 15 V mA ⎯ 5 ⎯ 110 118 125 ⎯ 98 ⎯ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit IGBT ⎯ ⎯ 0.125 FRD ⎯ ⎯ 0.195 Compound is applied ⎯ 0.013 ⎯ Case temperature ⎯ VD = 15 V °C V 3. Thermal resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 2004-10-01 °C/W °C/W 5/10 MIG200J6CMB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) P VD 0.1 µF 15 kΩ OUT IN VS 47 µF 15 V GND GND U (V, W) VCC VD IF = 16mA 0.1 µF 15 kΩ OUT IN PG VS 47 µF 15 V GND N GND Timing Chart Input pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% toff 10% tc (off) 10% ton 20% Irr trr 10% tc (on) 2004-10-01 6/10 MIG200J6CMB1W 4. Recommended conditions for application Characteristics Symbol Supply voltage VCC Test Condition Unit 300 400 V 15 16.5 V PWM Control ⎯ ⎯ 20 kHz Switching time test circuit (See page.6) 4 ⎯ ⎯ µs VD-GND Signal terminal Carrier frequency fc tdead Max ⎯ VD (Note 2) Typ. 13.5 P-N Power terminal Control supply voltage Dead time Min Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG200J6CMB1W IC – VCE IC – VCE 400 400 VD = 17 V IC (A) 13 V 15 V Collector current Collector current IC (A) VD = 17 V 300 200 100 15 V 300 13 V 200 100 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Collector-emitter voltage VCE Tj = 125°C 0 0 4 (V) 1 Switching time – IC (µs) Switching time (µs) Switching time ton ton toff tc (off) 0.1 Tj = 25°C toff 1 tc (on) tc (off) 0.1 Tj = 125°C VCC = 300 V VCC = 300 V VD = 15 V VD = 15 V L-LOAD L-LOAD 50 100 150 200 0.01 0 250 50 Collector current IC (A) IF – VF 200 250 trr, Irr – IF Peak reverse recovery current Irr (A) Reverse recovery time trr (×10 ns) (A) 150 100 350 Forward current IF 100 Collector current IC (A) 400 200 150 100 Common cathode : Tj = 25°C 50 : Tj = 125°C 0 0 (V) Switching time – IC tc (on) 250 VCE 4 10 1 300 3 Collector-emitter voltage 10 0.01 0 2 1 2 Forward voltage 3 VF (V) 4 Irr 10 trr Common cathode : Tj = 25°C : Tj = 125°C 1 0 50 100 Forward current 150 200 250 IF (A) 2004-10-01 8/10 MIG200J6CMB1W (mA) 500 ID (H) ID (H) – fc 400 High side control circuit current Over current protection trip level OC (A) OC – Tc 600 300 200 100 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 150 50 40 30 20 10 VD = 15 V Tj = 25°C 0 0 5 (°C) 10 Carrier frequency 80 fc 20 25 (kHz) Reverse bias SOA 400 OC IC (A) ID (L) Low side control circuit current 320 240 Collector current (mA) ID (L) – fc 120 100 15 60 40 160 80 20 VD = 15 V Tj < = 125°C VD = 15 V Tj = 25°C 0 0 5 10 15 Carrier frequency fc 20 25 (kHz) 0 0 100 200 300 400 Collector-emitter voltage 500 VCE 600 700 (V) Rth (t) – tw Inverter stage Transient thermal resistance Rth (t) (°C/W) 1 Diode 0.1 Transistor 0.01 Tc = 25°C 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 9/10 MIG200J6CMB1W Turn on loss − IC Turn off loss − IC (mJ) 100 10 10 Eoff 1 Turn off loss Turn on loss Eon (mJ) 100 VCC = 300 V VD = 15 V 0.1 1 VCC = 300 V VD = 15 V 0.1 L-LOAD L-LOAD : Tj = 25°C : Tj = 25°C : Tj = 125°C 0.01 0 50 100 150 Collector current IC (A) 200 : Tj = 125°C 250 0.01 0 50 100 150 200 250 Collector current IC (A) 2004-10-01 10/10