MIG50J6CSB1W MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG50J6CSB1W (600V/50A 6in1) High Power Switching Applications Motor Control Applications • Integrates inverter, circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. • The electrodes are isolated from the case • Low thermal resistance • VCE (sat) = 1.8 V (typ.) • UL recognized: File No. E87989 Equivalent Circuit 20 19 FO IN VD GND GND VS OUT 18 17 16 15 14 13 12 11 10 9 8 7 6 5 FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND GND GND GND VS OUT W VS OUT V VS OUT U VS 4 3 2 1 GND IN FO VD OUT GND B VS OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 1/10 MIG50J6CSB1W Package Dimensions Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 2/10 MIG50J6CSB1W Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 3/10 MIG50J6CSB1W Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Supply voltage Symbol Rating Unit P-N Power terminal VCC 450 V ⎯ VCES 600 V Collector-emitter voltage Inverter Collector current Tc = 25°C, DC IC 50 A Forward current Tc = 25°C, DC IF 50 A Collector power dissipation Tc = 25°C, DC PC 340 W ⎯ Junction temperature Control Module Tj 150 °C Control supply voltage VD-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Fault output current FO sink current IFO 14 mA Operating temperature ⎯ Tc −20~ + 100 °C Storage temperature range ⎯ Tstg −40~ + 125 °C V Isolation voltage AC 1 min VISO 2500 Screw torque (Terminal) M4 ⎯ 2 Screw torque (Mounting) M5 ⎯ 3 N･m Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 600 V VD = 15 V IC = 50 A VIN = 15 V → 0 V tc (on) trr toff tc (off) Typ. Max Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C 1.5 1.8 2.2 Tj = 125°C ⎯ 2.0 ⎯ IF = 50 A, Tj = 25°C ton Switching time Min VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) ⎯ 2.0 2.5 ⎯ 1.3 2.2 ⎯ 0.25 ⎯ ⎯ 0.2 ⎯ ⎯ 1.1 2.1 ⎯ 0.2 ⎯ Unit mA V V µs Note 1: Switching time test circuit and timing chart 2004-10-01 4/10 MIG50J6CSB1W 2. Control stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Test Condition VD = 15 V VD = 15 V Min Typ. Max ⎯ 13 17 ⎯ 39 51 1.4 1.6 1.8 2.2 2.5 2.8 ⎯ 10 12 ⎯ ⎯ 0.1 Protection IFO (on) Normal IFO (off) Inverter OC VD = 15 V, Tj < = 125°C 80 Short circuit protection trip Inverter level SC VD = 15 V, Tj < = 125°C 80 Fault output current Over current protection trip level Over cuttent cut-off time toff (OC) Over temperature protection Trip level OT Reset level OTr Control supply under voltage protection Trip level UV Reset level UVr Fault output pulse width tFO VD = 15 V VD = 15 V ⎯ ⎯ Unit mA V mA ⎯ A ⎯ A µs ⎯ 5 ⎯ 110 118 125 ⎯ 98 ⎯ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit IGBT ⎯ ⎯ 0.360 FRD ⎯ ⎯ 0.550 Compound is applied ⎯ 0.017 ⎯ Case temperature ⎯ VD = 15 V °C V 3. Thermal resistance (Tc= 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 2004-10-01 °C/W °C/W 5/10 MIG50J6CSB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) P VD 0.1 µF 15 kΩ OUT IN 15 V VS 10 µF GND GND U (V, W) VCC VD IF = 16mA 0.1 µF 15 kΩ OUT IN PG 15 V VS 10 µF GND N GND Timing Chart Input pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% toff 10% tc (off) 10% ton 20% Irr trr 10% tc (on) 2004-10-01 6/10 MIG50J6CSB1W 4. Recommended conditions for application Characteristics Supply voltage Symbol VCC Test Condition Max Unit ⎯ 300 400 V 15 16.5 V PWM Control ⎯ ⎯ 20 kHz Switching time test circuit (See page.6) (Note 2) 3 ⎯ ⎯ µs VD VD-GND Signal terminal Carrier frequency fc tdead Typ. 13.5 P-N Power terminal Control supply voltage Dead time Min Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG50J6CSB1W IC – VCE IC – VCE 100 100 13 V (A) 80 80 15 V IC 15 V 60 60 Collector current Collector current VD = 17 V 13 V IC (A) VD = 17 V 40 20 40 20 Common emitter Common emitter Tj = 25°C 0 0 1 2 Tj = 125°C 3 Collector-emitter voltage VCE 0 0 4 1 (V) 2 3 Collector-emitter voltage Switching time – IC VCE 4 (V) Switching time – IC 10 10 5 (µs) ton toff 1 Switching time Switching time (µs) 3 0.5 0.3 tc (on) tc (off) 0.1 tc (on) tc (off) 0.1 Tj = 25°C VCC = 300 V VD = 15 V L-Load 0.05 0.03 0.01 0 ton toff 1 10 20 30 40 Collector current IC 50 Tj = 125°C VCC = 300 V VD = 15 V L-Load 0.01 0 60 10 (A) 20 IF – VF 50 60 (A) trr, Irr – IF Peak reverse recovery current Irr (A) Reverse recovery time trr (×10ns) 100 (A) 80 Forward current IF 40 Collector current IC 100 60 40 Common cathode 20 0 0 30 :Tj = 25°C :Tj = 125°C 1 2 Forward voltage 3 VF (V) 4 30 10 trr Irr Common cathode 3 :Tj = 25°C :Tj = 125°C 1 0 10 20 Forward 30 40 current IF 50 60 (A) 2004-10-01 8/10 MIG50J6CSB1W Inverter stage 100 50 VD = 15 V 0 0 25 50 75 Case temperature 100 TC 125 (mA) Over current protection trip level OC (A) 150 ID (H) ID (H) – fc 30 25 High side control circuit current OC – TC 200 20 150 15 10 5 VD = 15 Tj = 25°C 0 0 5 (°C) fc 20 25 (kHz) Reverse bias SOA 100 100 90 OC 80 IC (A) (mA) ID (L) 15 Carrier frequency ID (L) – fc 70 60 80 60 Collector current Low side control circuit current 10 50 40 30 20 40 20 Tj < = 125°C VD = 15 V VD = 15 V Tj = 25°C 10 0 0 5 10 15 Carrier frequency fc 20 25 (kHz) 0 0 400 500 Collector-emitter voltage VCE 100 200 300 600 700 (V) (°C/W) Rth (t) – tw Inverter stage 1 Tc = 25°C Diode 0.5 Transient thermal resistance Rth (t) 0.3 Transistor 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 9/10 MIG50J6CSB1W Turn off loss − IC 5 5 3 3 (mJ) 10 Eoff 1 0.5 0.3 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 0.01 0 Turn off loss Turn on loss Eon (mJ) Turn on loss − IC 10 10 20 30 40 Collector current IC (A) 50 1 0.5 0.3 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 60 0.01 0 10 20 30 40 50 60 Collector current IC (A) 2004-10-01 10/10