MIG100Q6CMB1X MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG100Q6CMB1X (1200V/100A 6in1) High Power Switching Applications Motor Control Applications • Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. • The electrodes are isolated from case. • VCE (sat) = 2.4 V (typ.) • UL recognized File No. E87989 • Weight: 385 g (typ.) Equivalent Circuit 20 19 FO IN VD GND GND VS OUT 18 17 16 15 14 13 12 11 10 9 8 7 6 5 FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND GND GND GND VS OUT W VS OUT V VS OUT VS 4 3 2 1 GND IN FO VD OUT GND U VS OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 1/10 MIG100Q6CMB1X Package Dimensions Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 2/10 MIG100Q6CMB1X Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 3/10 MIG100Q6CMB1X Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Supply voltage Symbol Ratings Unit P-N power terminal VCC 900 V ⎯ VCES 1200 V Collector-emitter voltage Inverter Collector current Tc = 25°C, DC IC 100 A Forward current Tc = 25°C, DC IF 100 A Collector power dissipation Tc = 25°C PC 960 W ⎯ Junction temperature Control Module Tj 150 °C Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND (L) terminal VFO 20 V Fault output current FO sink current IFO 14 mA Operating temperature ⎯ Tc −20~+100 °C Storage temperature range ⎯ Tstg −40~+125 °C VISO 2500 V ⎯ 3 N·m Isolation voltage AC 1 minute Screw torque (terminal/mounting) M5 Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 1200 V VD = 15 V, IC = 100 A, VIN = 15 V → 0 V Min Typ. Max Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C ⎯ 2.4 2.8 Tj = 125°C ⎯ ⎯ 3.2 ⎯ 2.2 2.6 ⎯ 3.0 4.0 IF = 100 A, Tj = 25°C ton tc (on) Switching time trr toff tc (off) VCC = 600 V, IC = 100 A, VD = 15 V, VIN = 15 V ↔ 0 V, Tj = 25°C, Inductive load (Note 1) Unit mA V ⎯ 0.35 ⎯ ⎯ 0.3 ⎯ ⎯ 1.5 2.5 ⎯ 0.3 ⎯ V µs Note 1: Switching time test circuit and timing chart. 2004-10-01 4/10 MIG100Q6CMB1X 2. Control Stage (Tj = 25°C) Characteristic Control circuit current Symbol High side ID (H) Low side ID (L) Test Condition VD = 15 V Min Typ. Max ⎯ 13 17 ⎯ 39 51 Unit mA Input-on signal voltage VIN (on) VD = 15 V 1.4 1.6 1.8 V Input-off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V Protection IFO (on) 10 12 IFO (off) VD = 15 V, Tj < = 125°C ⎯ Normal ⎯ ⎯ 0.1 ⎯ Fault output current Over current protection trip level Short-circuit current protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection OC VD = 15 V, Tj < = 125°C 160 ⎯ SC VD = 15 V, Tj < = 125°C 160 ⎯ ⎯ A ⎯ 5 ⎯ µs 110 118 125 ⎯ 98 ⎯ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit IGBT ⎯ ⎯ 0.130 FWD ⎯ ⎯ 0.190 Compound is applied ⎯ 0.013 ⎯ toff (OC) Trip level OT Reset level OTr Trip level UV Reset level UVr Fault output pulse width mA tFO VD = 15 V Case temperature ⎯ VD = 15 V A °C V 3. Thermal Resistance (Tc = 25°C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 2004-10-01 °C/W °C/W 5/10 MIG100Q6CMB1X Switching Time Test Circuit Intelligent power module TLP559 (IGM) P VD 0.1 µF 15 kΩ OUT IN VS 47 µF 15 V GND GND U (V, W) VCC VD IF = 16 mA 0.1 µF 15 kΩ OUT IN PG VS 47 µF 15 V GND N GND Timing Chart Input Pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% 10% 10% 10% tc (on) tc (off) toff 20% Irr trr ton 2004-10-01 6/10 MIG100Q6CMB1X 4. Recommended conditions for application Characteristic Symbol VCC Supply voltage Test Condition Max Unit ⎯ 600 800 V 15 16.5 V PWM Control ⎯ ⎯ 20 kHz Switching time test circuit (see page.6) (Note 2) 4 ⎯ ⎯ µs Control supply voltage VD-GND Signal terminal Carrier frequency fc tdead Typ. 13.5 P-N Power terminal VD Dead time Min Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG100Q6CMB1X IC – VCE IC – VCE 200 VD = 15 V VD = 17 V VD = 15 V IC (A) 150 VD = 13 V Collector current Collector current IC (A) 200 100 50 VD = 17 V 150 VD = 13 V 100 50 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Tj = 125°C 4 Collector-emitter voltage VCE 0 0 5 1 (V) 2 3 Collector-emitter voltage Switching time – IC 4 VCE (V) Switching time – IC 10 10 ton (µs) toff 1 Switching time Switching time (µs) ton tc (on) tc (off) 0.1 Tj = 25°C toff 1 tc (on) tc (off) 0.1 Tj = 125°C VCC = 600 V VCC = 600 V VD = 15 V VD = 15 V L-LOAD 0.01 0 20 40 60 80 100 L-LOAD 0.01 0 120 20 40 IF – VF 100 120 100 Peak reverse recovery current Irr (A) Reverse recovery time trr (×10 nS) (A) 80 trr, Irr – IF 200 Forward current IF 60 Collector current IC (A) Collector current IC (A) 150 100 50 Common cathode : Tj = 25°C : Tj = 125°C 0 0 5 1 2 Forward voltage 3 VF (V) 4 5 50 30 10 trr Irr 5 3 Common cathode : Tj = 25°C 1 0 : Tj = 125°C 20 40 60 Forward current 80 100 120 IF (A) 2004-10-01 8/10 MIG100Q6CMB1X OC – Tc ID (H) – fc 250 High side control circuit current Over current protection trip level OC (A) ID (H) (mA) 300 200 150 100 50 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 30 25 20 15 10 5 VD = 15 V 0 0 150 5 (°C) 10 Carrier frequency fc 20 25 (kHz) Reverse bias SOA 100 200 80 160 IC (A) OC 120 60 Collector current ID (L) (mA) ID (L) – fc Low side control circuit current 15 40 80 40 20 Tj < = 125°C VD = 15 V 0 0 5 10 15 Carrier frequency fc 20 VD = 15V 25 (kHz) 0 0 200 400 600 800 Collector-emitter voltage 1000 1200 1400 VCE (V) Rth (t) – tw Transient thermal resistance Rth (t)/(°C/W) 10 TC = 25°C 1 Diode stage 0.1 Transistor stage 0.01 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 9/10 MIG100Q6CMB1X 50 50 Eon (mJ) 30 Eoff (mJ) 30 10 Turn off loss Turn off loss – IC 100 Turn on loss Turn on loss – IC 100 10 5 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 3 1 0 20 40 60 80 Collector current IC (A) 100 120 5 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 3 1 0 20 40 60 80 100 120 Collector current IC (A) 2004-10-01 10/10