Si7880DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 29 0.00425 @ VGS = 4.5 V 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters - Low-Side MOSFET in Synchronous Buck in Desktops D Secondary Synchronous Rectifier PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) Avalanche Current L = 0.1 mH Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 18 25 14 IDM 60 IAS 50 IS TA = 25_C V 29 ID PD A 4.5 1.6 5.4 1.9 3.4 1.2 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71875 S-03768—Rev. B, 21-Apr-03 www.vishay.com 1 Si7880DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 30 A VGS = 10 V, ID = 29 A 0.0025 0.0030 VGS = 4.5 V, ID = 25 A 0.0035 0.00425 gfs VDS = 6 V, ID = 29 A 90 VSD IS = 4.5 A, VGS = 0 V 0.68 1.1 40.5 60 W S V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 29 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 10.5 Gate Resistance Rg 1.2 td(on) 30 tr 15 25 110 200 35 60 55 80 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 18 IF = 2.9 A, di/dt = 100 A/ms W 50 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 3V 20 10 40 30 TC = 125_C 20 25_C 10 -55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Document Number: 71875 S-03768—Rev. B, 21-Apr-03 Si7880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 8000 VGS = 4.5 V 0.004 0.003 Ciss 6400 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.005 VGS = 10 V 0.002 0.001 4800 3200 Coss 1600 0.000 Crss 0 0 10 20 30 40 50 60 0 4 ID - Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 29 A 8 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 10 6 4 2 VGS = 10 V ID = 29 A 1.6 1.4 1.2 1.0 0.8 0 0 18 36 54 72 0.6 -50 90 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.010 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 0.008 0.006 ID = 29 A 0.004 0.002 0.000 1 0.00 25 TJ - Junction Temperature (_C) 60 I S - Source Current (A) 8 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71875 S-03768—Rev. B, 21-Apr-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 0.2 -0.0 Power (W) V GS(th) Variance (V) 160 ID = 250 mA -0.2 -0.4 120 80 -0.6 40 -0.8 -1.0 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area 100 1 ms Limited by rDS(on) I D - Drain Current (A) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71875 S-03768—Rev. B, 21-Apr-03 Si7880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 - 4 Document Number: 71875 S-03768—Rev. B, 21-Apr-03 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5