DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Preliminary specification 2000 Feb 17 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING • High gain PIN DESCRIPTION • Excellent adjacent channel power rejection 1 RF in • Small SMD package 2 CTRL • Low dissipation. 3 VS1 4 VS2 + RF out APPLICATIONS 5 GND • General purpose variable gain amplifier for low voltage and medium power 6 GND • Driver for power amplifiers in systems that require good linearity, such as CDMA, both cellular band (850 MHz) and PCS (1.9 GHz). This is because of the high output power and good linearity. 6 5 handbook, halfpage 4 5 VS1 4 RFin VS2+RFout GND 1 DESCRIPTION 1 Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 6-pin SOT363 plastic SMD package for low voltage medium power applications. 2 Top view 2 3 CTRL BIAS CIRCUIT 3Top view MAM429 MSA370 Marking code: A3 − Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS1, VS2 supply voltages IS supply current into pin 3 + pin 4 CONDITIONS TYP. MAX. UNIT 3 3.3 V VCTRL = 0 0 10 µA VCTRL = 2.7 V; VS = 3 V 51 63 mA VCTRL = 2.4 V; VS = 3 V 30 37 mA PL load power at 1 dB gain compression point; f = 1.9 GHz 13 − dBm ACPR adjacent channel power rejection f = 1.9 GHz; PL = 10 dBm 49 − dBc f = 836 MHz; PL = 8 dBm 48 − dBc Gp power gain f = 1.9 GHz; PL = 12 dBm 23 − dB f = 836 MHz; PL = 8 dBm 24 − dB f = 836 MHz; PL = 8 dBm 62 − dB ∆G gain control range CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Feb 17 2 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS DC supply voltage − 3.3 V VCTRL control voltage − < VS V ICTRL control current − 1.2 mA IS1 current into pin 3 − 27 mA IS2 current into pin 4 − 50 mA PD drive power − tbf dBm Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Ts ≤ 80 °C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS thermal resistance from junction to solder point Rth j-s 300 Ptot (mW) 200 100 0 0 50 100 150 200 Ts (°C) Fig.2 Power derating. 2000 Feb 17 3 VALUE UNIT 350 K/W Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 CHARACTERISTICS Tj = 25 °C; ZS = ZL = 50 Ω; VS = 3 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency range 800 − 2500 MHz VS1, VS2 supply voltages 2.7 3 3.3 V IS supply current (in pin 3 + pin 4) VCTRL = 0; PD = 0 mW − 0 10 µA ICTRL control current VCTRL = 2.7 V; VS = 3 V; PD = 0 mW 37 51 63 mA VCTRL = 2.4 V; VS = 3 V; PD = 0 mW 23 30 37 mA VCTRL = 2.7 V 0.7 0.92 1.1 mA 1850 − 1950 MHz VCTRL = 2.7 V; PL = 12 dBm − 23 − dB f = 1900 MHz f frequency range GP power gain ∆G gain control range 0 < VCTRL < 2.7 V − 56 − dB GCS gain control slope note 1 − 21 − dB/V ACPR adjacent channel power ±1.23 MHz offset; BW ACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 10 dBm − 49 − dBc ±1.98 MHz offset; BW ACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 10 dBm − 74 − dBc PL load power at 1 dB gain compression point − 13 − dBm PN noise power in CDMA receive band (1895 − 1955 MHz) − tbf − dBm/Hz VSWRIN input VSWR VCTRL = 2.7 V − 1:3.5 − VSWROUT output VSWR VCTRL = 2.7 V − 1:1.3 − 824 − 849 MHz f = 836 MHz f frequency range GP power gain VCTRL = 2.7 V; PL = 8 dBm − 24 − dB ∆G gain control range 0 < VCTRL < 2.7 V − 62 − dB GCS gain control slope note 1 − 22 − dB/V ACPR adjacent channel power ±885 kHz offset; BW ACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 8 dBm − 49 − dBc ±1.98 MHz offset; BW ACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 8 dBm − 74 − dBc PL load power at 1 dB gain compression point − 11 − dBm PN noise power in CDMA receive band ( 869 to 894 MHz) − tbf − dBm/Hz VSWRIN input VSWR VCTRL = 2.7 V − 1:2 − VSWROUT output VSWR VCTRL = 2.7 V − 1:1.4 − Notes 1. GCS = (G @ Vctrl = 2.5 V − G @ Vctrl = 1.5 V) / (Vctrl = 2.5 V − Vctrl = 1.5V) 2000 Feb 17 4 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 16 PL (dBm) 12 60 IS (mA) 8 40 4 836MHz 0 20 1900MHz -4 -8 0 0 1 2 -30 3 -20 -10 PD (dBm) VCTRL (V) VS = 3 V. Fig.2 VS = 3 V; VCTRL = 2.7 V. Total supply current as a function of control voltage; typical values. Fig.3 40 GP (dB) Load power as a function of the drive power; typical values. 40 GP (dB) 20 20 0 0 -20 -20 -40 -40 -60 0 1 2 3 VCTRL (V) 0 1 3 VCTRL (V) VS = 3 V; PD = −14 dBm; f = 1.9 GHz. VS = 3 V; PD = −14 dBm; f = 836 MHz. Fig.4 Fig.5 Power gain as a function of control voltage; typical values. 2000 Feb 17 2 5 Power gain as a function of control voltage; typical values. Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 0 ACPR (dBc) 0 ACPR (dBc) -20 -20 Offset = 1.23MHz Offset = 0.885MHz -40 -40 Offset = 1.98MHz Offset = 1.98MHz -60 -60 -80 -80 -16 -12 -8 -4 0 4 8 12 PL (dBm) -20 -16 -12 -8 -4 VS = 3 V; f = 1.9 GHz; PD = −12.8 dBm. VS = 3.6 V; f = 836 MHz; PD = −16 dBm. Fig.6 Fig.7 Adjacent channel power rejection as a function of the load power; typical values. 160 GCS (dB/V) 120 80 40 836MHz 1900MHz 0 -40 0 1 2 3 Vctrl (V) VS = 3 V; PD = −14 dBm. Fig.8 Gain control slope as a function of the control voltage; typical values. 2000 Feb 17 6 0 4 8 PL (dBm) Adjacent channel power rejection as a function of the load power; typical values. Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 ELECTRICAL BLOCK DIAGRAM handbook, full pagewidth R2 VS2 VS1 C2 C3 VS1 VS2-RFout IN RF input L1 RF output L2 DC-block Bias-T GND GND R1 Vctrl CTRL BIAS CIRCUIT C1 MGS535 Fig.9 Test diagram. List of components (see Fig.3) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip capacitor 10 nF 0603 tbf C2 multilayer ceramic chip capacitor 22 nF 0603 tbf C3 multilayer ceramic chip capacitor 1.5 nF 0603 tbf L1, L2 stripline; note 1 50 Ω R1 SMD resistor 22 Ω; 0.16 W 0603 tbf R2 SMD resistor 2.4 Ω; 0.16 W 0603 tbf tbf Note 1. The striplines are on a gold plated double copper-clad printed-circuit board (εr = 6.15), board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm. 2000 Feb 17 7 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2000 Feb 17 REFERENCES IEC JEDEC EIAJ SC-88 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031/1 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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