DISCRETE SEMICONDUCTORS DATA SHEET M3D452 BGA2031 MMIC variable gain amplifier Preliminary specification Supersedes data of 1999 Feb 26 1999 Jul 23 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 FEATURES PINNING • High gain PIN DESCRIPTION • Excellent adjacent channel power rejection 1 RF in • Small SMD package 2 CTRL • Low dissipation. 3 VS1 4 VS2 + RF out APPLICATIONS 5 GND • General purpose variable gain amplifier for low voltage and medium power VS1 handbook, halfpage • Driver for power amplifiers in systems that require good linearity, such as CDMA, both cellular band (850 MHz) and PCS (1.9 GHz). This is because of the high output power and good linearity. 5 4 RFin VS2+RFout GND DESCRIPTION 1 2 Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 5-pin SOT551A plastic SMD package for low voltage medium power applications. Top view 3 CTRL BIAS CIRCUIT MAM429 Marking code: G1. Fig.1 Simplified outline (SOT551A) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS1, VS2 supply voltages IS supply current into pin 3 + pin 4 CONDITIONS TYP. MAX. UNIT 3.6 4.1 V VCTRL = 0 0 − µA VCTRL = 2.7 V; VS = 3.6 V 51 63 mA VCTRL = 2.4 V; VS = 3 V 30 37 mA PL load power at 1 dB gain compression point; f = 1.9 GHz 13.5 − dBm ACPR adjacent channel power rejection f = 1.9 GHz; PL = 12 dBm 48 − dBc f = 836 MHz; PL = 8 dBm 55 − dBc f = 1.9 GHz; PL = 12 dBm 26 − dB f = 836 MHz; PL = 8 dBm 27 − dB f = 836 MHz; PL = 8 dBm 70 − dB Gp ∆G 1999 Jul 23 power gain gain control range 2 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER VS DC supply voltage ICTRL control current CONDITIONS MIN. MAX. UNIT − 4.2 V VCTRL = 2.7 V; VS1 = 4.2 V; VS2 = 4.2 V − 1.2 mA IS1 current into pin 3 VS1 = 4.2 V − 27 mA IS2 current into pin 4 VS2 = 4.2 V − 50 mA PD drive power − tbf dBm Ptot total power dissipation − 280 mW Tstg storage temperature Ts ≤ 90 °C −65 +150 °C Tj operating junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-s 1999 Jul 23 PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 280 mW; Ts ≤ 90 °C 3 VALUE UNIT 215 K/W Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 CHARACTERISTICS Tj = 25 °C; ZS = ZL = 50 Ω; VS = 3.6 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency range 800 − 2500 MHz VS1, VS2 supply voltages 2.7 3.6 4.1 V IS supply current (in pin 3 + pin 4) VCTRL = 0 − 0 10 µA VCTRL = 2.7 V; VS = 3.6 V 39 51 63 mA VCTRL = 2.4 V; VS = 3 V 23 30 37 mA VCTRL = 2.7 V 0.7 0.92 1.1 mA 1850 − 1950 MHz ICTRL control current f = 1900 MHz f frequency range GP power gain VCTRL = 2.7 V; PL = 12 dBm − 26 − dB ∆G gain control range 0 < VCTRL < 2.7 V − 61 − dB GCS gain control slope middle of ∆G − 38 − dB/V ACPR adjacent channel power ±1.23 MHz offset; BWACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 10 dBm − 48 − dBc ±1.98 MHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 10 dBm − 67 − dBc PL load power at 1 dB gain compression point − 13.5 − dBm PN noise power in CDMA receive band (1895 − 1955 MHz) − tbf − dBm/Hz VSWRIN input VSWR VCTRL = 2.7 V − 1:3.5 − VSWROUT output VSWR VCTRL = 2.7 V − 1:1.6 − 824 − 849 MHz f = 836 MHz f frequency range GP power gain VCTRL = 2.7 V; PL = 8 dBm − 27 − dB ∆G gain control range 0 < VCTRL < 2.7 V − 70 − dB GCS gain control slope middle of ∆G ACPR adjacent channel power ±885 kHz offset; BWACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 8 dBm − 40 − dB/V − 55 − dBc ±1.98 MHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 8 dBm − 69 − dBc PL load power at 1 dB gain compression point − 12 − dBm PN noise power in CDMA receive band (869 to 894 MHz) − tbf − dBm/Hz VSWRIN input VSWR VCTRL = 2.7 V − 1:2 − VSWROUT output VSWR VCTRL = 2.7 V − 1:1.7 − 1999 Jul 23 4 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 MGS530 MGS529 16 60 handbook, halfpage handbook, halfpage PL (dBm) IS(tot) (mA) (3) 12 (2) (1) 40 8 4 836 MHz 20 1900 MHz 0 −4 −30 0 0 1 2 VCTRL (V) 3 −20 VS = 3.6 V. (1) Tamb = −30 °C. (2) Tamb = 25 °C. (3) Tamb = 85 °C. VS = 3.6 V; VC = 2.7 V. Fig.2 Fig.3 Total supply current as a function of control voltage; typical values. MGS531 40 PD (dBm) −10 Load power as a function of the drive power; typical values. MGS532 40 GP (dB) handbook, halfpage handbook, halfpage GP (dB) 20 20 (1) (1) 0 (2) (2) (3) (3) 0 −20 −20 −40 −40 −60 0 1 2 VCTRL (V) 3 0 1 VS = 3.6 V; f = 1.9 GHz. (1) Tamb = −30 °C. (2) Tamb = 25 °C. (3) Tamb = 85 °C. VS = 3.6 V; f = 836 MHz. (1) Tamb = −30 °C. (2) Tamb = 25 °C. (3) Tamb = 85 °C. Fig.4 Fig.5 Power gain as a function of control voltage; typical values. 1999 Jul 23 5 2 VCRTL (V) 3 Power gain as a function of control voltage; typical values. Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 MGS533 MGS534 0 0 handbook, halfpage handbook, halfpage ACPR (dBc) ACPR (dBc) −20 −20 offset = 1.23 MHz offset = 0.885 MHz −40 −40 −60 −60 offset = 1.98 MHz offset = 1.98 MHz −80 −16 −12 −8 −4 0 4 −80 −20 8 12 PL (dBm) −16 −12 −8 −4 VS = 3.6 V; f = 1.9 GHz; PD = −13.5 dBm. VS = 3.6 V; f = 836 MHz; PD = −19 dBm. Fig.6 Fig.7 Adjacent channel power rejection as a function of the load power; typical values. 1999 Jul 23 6 0 4 8 PL (dBm) Adjacent channel power rejection as a function of the load power; typical values. Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 ELECTRICAL BLOCK DIAGRAM handbook, full pagewidth R2 VS2 VS1 C2 C3 VS1 VS2-RFout IN RF input L1 RF output L2 DC-block Bias-T GND GND R1 Vctrl CTRL BIAS CIRCUIT C1 MGS535 Fig.8 Test diagram. List of components (see Fig.8) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip capacitor 10 nF 0603 tbf C2 multilayer ceramic chip capacitor 22 nF 0603 tbf C3 multilayer ceramic chip capacitor 1.5 nF 0603 L1, L2 stripline; note 1 50 Ω R1 SMD resistor 22 Ω; 0.16 W 0603 tbf R2 SMD resistor 2.4 Ω; 0.16 W 0603 tbf tbf tbf Note 1. The striplines are on a gold plated double copper-clad printed-circuit board (εr = 6.15), board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm. 1999 Jul 23 7 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT551A Package under development Philips Semiconductors reserves the right to make changes without notice. D E B X A y HE v M A e2 b1 5 4 Q pin 1 index A A1 1 2 3 bp e c Lp w M B e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 e2 HE Lp Q v w y mm 1.1 0.9 0.1 0.3 0.2 0.8 1.0 0.25 0.10 2.2 1.8 1.35 1.15 0.65 1.3 0.975 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 1999-05-07 SOT551A 1999 Jul 23 EUROPEAN PROJECTION 8 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jul 23 9 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 NOTES 1999 Jul 23 10 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 NOTES 1999 Jul 23 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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