Order this document by MMBT2369LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage VCES 40 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 4.5 Vdc IC 200 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 15 — — 40 — — 40 — — 4.5 — — — — — — 0.4 30 — — 0.4 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector – Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) V(BR)CES Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) Vdc Vdc Vdc Vdc µAdc ICBO µAdc ICES MMBT2369A 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 40 — 40 20 30 20 20 — — — — — — — 120 120 — — — — — — — — — — — — — — — 0.25 0.20 0.30 0.25 0.50 0.7 — — — — — — — 0.85 1.02 1.15 1.60 — — 4.0 5.0 — — — 5.0 13 — 8.0 12 — 10 18 Unit ON CHARACTERISTICS DC Current Gain (3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A hFE Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369A MMBT2369A MMBT2369A MMBT2369A — VCE(sat) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Small Signal CurrentGain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) pF hfe — SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn–On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff 3. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. ns ns ns Motorola Small–Signal Transistors, FETs and Diodes Device Data SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 t1 +10.6 V 0 –1.5 V 3V < 1 ns 270 Ω 3.3 k 0 –9.15 V Cs* < 4 pF Figure 1. ton Circuit — 10 mA t1 –2 V 10 V 95 Ω +11.4 V 1k Cs* < 4 pF Figure 3. toff Circuit — 10 mA t1 10 V 0 –8.6 V 0 < 1 ns 3.3 k < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% +10.8 V 270 Ω t1 +10.75 V Cs* < 12 pF 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 µs DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 2. ton Circuit — 100 mA 95 Ω Cs* < 12 pF 1N916 Figure 4. toff Circuit — 100 mA * Total shunt capacitance of test jig and connectors. TO OSCILLOSCOPE INPUT IMPEDANCE = 50 Ω RISE TIME = 1 ns TURN–ON WAVEFORMS Vin 0 ton Vout 90% 0.1 µF 220 Ω 10% Vout 3.3 kΩ Vin 50 Ω PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 Ω PW ≥ 300 ns DUTY CYCLE < 2% 50 Ω 3.3 k 0.0023 µF 0.005 µF 0.0023 µF 0.005 µF 0.1 µF 0.1 µF VBB +– TURN–OFF WAVEFORMS 0 10% Vin 90% Vout +V =3V – CC toff VBB = +12 V Vin = –15 V Figure 5. Turn–On and Turn–Off Time Test Circuit 6 100 TJ = 25°C 5 LIMIT TYPICAL Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 βF = 10 VCC = 10 V VOB = 2 V 50 tr (VCC = 3 V) 20 tf tr VCC = 10 V 10 5 ts td 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 Figure 6. Junction Capacitance Variations Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Typical Switching Times 3 500 200 QT, βF = 40 t1 +5 V 3V 10 pF MAX ∆V 100 0 50 QA, VCC = 3 V 20 VALUES REFER TO IC = 10 mA TEST 270 < 1 ns PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% QA, VCC = 10 V Cs* < 4 pF 4.3 k Figure 9. QT Test Circuit 10 2 1 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 8. Maximum Charge Data C < COPT C t1 +6 V C=0 10 V 980 0 –4 V COPT 500 < 1 ns Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 10. Turn–Off Waveform VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) CHARGE (pC) QT, βF = 10 VCC = 10 V 25°C 100°C Figure 11. Storage Time Equivalent Test Circuit 1.0 TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 10 20 Figure 12. Maximum Collector Saturation Voltage Characteristics 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data hFE , MINIMUM DC CURRENT GAIN 200 TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C –15°C 50 –55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 13. Minimum Current Gain Characteristics 1.0 βF = 10 TJ = 25°C 1.2 0.5 MAX VBE(sat) 1.0 COEFFICIENT (mV/ °C) V(sat) , SATURATION VOLTAGE (VOLTS) 1.4 MIN VBE(sat) 0.8 0.6 0 APPROXIMATE DEVIATION FROM NOMINAL –0.5 θVC θVB –1.0 –55°C to +25°C ±0.15 mV/°C 25°C to 125°C ±0.15 mV/°C ±0.4 mV/°C ±0.3 mV/°C (25°C to 125°C) (–55°C to +25°C) (–55°C to +25°C) (25°C to 125°C) –1.5 θVB for VBE(sat) 0.4 0.2 θVC for VCE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) –2.0 50 100 Figure 14. Saturation Voltage Limits Motorola Small–Signal Transistors, FETs and Diodes Device Data –2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 Figure 15. Typical Temperature Coefficients 5 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H K J CASE 318–08 SOT–23 (TO–236AB) ISSUE AE Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT2369LT1/D