Order this document by MMBT4403LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –40 — –40 — –5.0 — — –0.1 — –0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) IBEV Collector Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) ICEX Vdc Vdc Vdc µAdc µAdc 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. v v Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MMBT4403LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 30 60 100 100 20 — — — 300 — — — –0.4 –0.75 –0.75 — –0.95 –1.3 200 — — 8.5 — 30 1.5 15 0.1 8.0 60 500 1.0 100 Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc)(3) (IC = –500 mAdc, VCE = –2.0 Vdc)(3) hFE Collector – Emitter Saturation Voltage(3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) fT Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter–Base Capacitance (VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe MHz pF pF kΩ X 10– 4 — mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –30 Vdc, VEB = –2.0 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) td — 15 tr — 20 (VCC = –30 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) ts — 225 tf — 30 v 300 ms, Duty Cycle v 2.0%. ns ns SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V – 30 V 200 Ω < 2 ns +2 V +14 V 0 0 1.0 kΩ – 16 V 10 to 100 µs, DUTY CYCLE = 2% Figure 1. Turn–On Time 2 200 Ω < 20 ns CS* < 10 pF 1.0 kΩ CS* < 10 pF –16 V 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 2. Turn–Off Time Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 TRANSIENT CHARACTERISTICS 25°C 100°C 10 7.0 5.0 30 VCC = 30 V IC/IB = 10 Ceb 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.1 0.2 0.3 20 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 30 10 20 Figure 3. Capacitances 300 500 Figure 4. Charge Data 100 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 300 500 200 t s′, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBT4403LT1 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ 6 4 2 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 IC = 50 µA 100 µA 500 µA 1.0 mA 6 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50 k h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C selected from the MMBT4403LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondingly–numbered curves hfe and other “h” parameters for this series of transistors. To on each graph. obtain these curves, a high–gain and a low–gain unit were 100 k 700 50 k hie , INPUT IMPEDANCE (OHMS) 1000 hfe , CURRENT GAIN 500 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 Figure 10. Current Gain Figure 11. Input Impedance 5.0 7.0 10 500 10 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 4 0.2 IC, COLLECTOR CURRENT (mAdc) 20 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 IC, COLLECTOR CURRENT (mAdc) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 20 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance 5.0 7.0 10 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 qVC for VCE(sat) 0.5 1.0 1.5 qVS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 16. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 2.5 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 17. Temperature Coefficients 5 MMBT4403LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H K J CASE 318–08 SOT–23 (TO–236AB) ISSUE AE Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 7 MMBT4403LT1 Motorola reserves the right to make changes without further notice to any products herein. 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