SUD45P03-15 Siliconix P-Channel 30-V (D-S), 150C MOSFET Product Summary rDS(on) () ID (A)a 0.015 @ VGS = –10 V 13 0.024 @ VGS = –4.5 V 8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 20 TA = 25C Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) TC = 25C Maximum Power Dissipationb V 13 ID TA = 100C Unit 8 IDM 100 IS –13 A 70 PD TA = 25C Operating Junction and Storage Temperature Range W 4a TJ, Tstg C –55 to 150 Thermal Resistance Ratings Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb RthJA 30 Maximum Junction-to-Case RthJC 1.8 Unit C/W Notes a. Calculated Rating for TA = 25C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-51 SUD45P03-15 Siliconix Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = –250 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductance b rDS(on) gfs V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 125C –50 VDS = –5 V, VGS = –10 V –50 VDS = –5 V, VGS = –4.5 V –20 mA A VGS = –10 V, ID = –13 A 0.012 0.015 VGS = –10 V, ID = –13 A, TJ = 125C 0.018 0.026 VGS = –4.5 V, ID = –13 A 0.020 0.024 VDS = –15 V, ID = –13 A nA 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg 50 Gate-Source Chargec 3200 VGS = 0 V, VDS = –25 V, F = 1 MHz VDS = –15 V, VGS = –10 V, ID = –45 A Qgs Qgd 6.2 Turn-On Delay Timec td(on) 13 Rise tr Turn-Off Delay Timec Fall Timec td(off) VDD = –15 V, RL = 0.33 W ID ^ –45 A, VGEN = –10 V, RG = 2.4 W tf 125 nC 14 Gate-Drain Chargec Timec pF 800 20 10 20 50 100 20 40 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current Diode Forward ISM Voltageb Source-Drain Reverse Recovery Time 100 VSD IF = –45 A, VGS = 0 V 1.0 1.5 V trr IF = –45 A, di/dt = 100 A/ms 55 100 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-52 A SUD45P03-15 Siliconix Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 6V 7V VGS = 10, 9, 8 V TC = –55C I D – Drain Current (A) I D – Drain Current (A) Transfer Characteristics 5V 4V 25C 125C 3V 2V VDS – Drain-to-Source Voltage (V) g fs – Transconductance (S) rDS(on) – On-Resistance ( ) 25C 125C VGS = 10 V VGS – Gate-to-Source Voltage (V) C – Capacitance (pF) Coss Gate Charge Crss ID – Drain Current (A) Ciss VGS = 4.5 V Capacitance ID – Drain Current (A) On-Resistance vs. Drain Current TC = –55C VGS – Gate-to-Source Voltage (V) Transconductance VDS – Drain-to-Source Voltage (V) VDS = 15 V ID = 45 A Qg – Total Gate Charge (nC) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-53 SUD45P03-15 Siliconix Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature VGS = 10 V ID = 45 A I S – Source Current (A) rDS(on) – On-Resistance ( W ) (Normalized) Source-Drain Diode Forward Voltage 100 TJ = 150C TJ = 25C 10 1 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 500 100 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1 dc 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1s 0.1 TA – Ambient Temperature (C) 1 100 ms TA = 25C Single Pulse Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-54 30