VISHAY SUU50N03-09P

SUU50N03-09P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)b
0.0095 @ VGS = 10 V
63b
0.014 @ VGS = 4.5 V
52b
VDS (V)
30
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
TO-251
D
G
and DRAIN-TAB
G D S
Top View
S
Order Number: SUU50N03-09P
SUU50N03-09P—E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
TC = 100_C
Pulsed Drain Current
Continuous Source Current (Diode
Conduction)a
Avalanche Current
L = 0.1
0 1 mH
Single Pulse Avalanche Energy
ID
44.5b
IDM
50
IS
10
IAS
35
EAS
TA = 25_C
Operating Junction and Storage Temperature Range
A
61
TC = 25_C
Maximum Power Dissipation
V
63b
TC = 25_C
Continuous Drain Currenta
Unit
mJ
65.2
PD
W
7.5a
TJ, Tstg
_C
--55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Symbol
t ≤ 10 sec
Steady State
Maximum Junction-to-Case
RthJA
RthJC
Typical
Maximum
16
20
40
50
1.8
2.3
Unit
_C/W
C/
Notes
a. Surface Mounted on FR4 Board, t ≤ 10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
Document Number: 72420
S-41696—Rev. B, 20-Sep-04
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SUU50N03-09P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = 20 V
100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
0.0095
gfs
Ω
0.015
VGS = 4.5 V, ID = 20 A
Forward Transconductanceb
mA
A
0.0076
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
50
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
0.0115
VDS = 15 V, ID = 20 A
0.014
20
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
180
Gate Resistance
Rg
1.5
Total Gate Chargec
Qg
15
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
2200
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ω
23
nC
C
5.0
VDD = 15 V, RL = 0.3 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω
td(off)
Fall Timec
pF
p
7.5
VDS = 15
5 V,, VGS = 4.5
5 V,, ID = 50 A
tr
Turn-Off Delay Timec
410
tf
9
15
80
120
22
35
8
12
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
35
70
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
120
120
VGS = 10 thru 6 V
5V
90
I D -- Drain Current (A)
I D -- Drain Current (A)
90
4V
60
30
60
TC = 125_C
30
3V
25_C
--55_C
2V
0
0
0
2
4
6
8
VDS -- Drain-to-Source Voltage (V)
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2
10
0
1
2
3
4
5
6
VGS -- Gate-to-Source Voltage (V)
Document Number: 72420
S-41696—Rev. B, 20-Sep-04
SUU50N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
0.05
r DS(on)-- On-Resistance ( Ω )
g fs -- Transconductance (S)
100
80
TC = --55_C
25_C
60
125_C
40
20
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0
0.00
0
10
20
30
40
50
0
20
40
ID -- Drain Current (A)
60
80
100
24
30
ID -- Drain Current (A)
Capacitance
Gate Charge
3000
10
V GS -- Gate-to-Source Voltage (V)
Ciss
C -- Capacitance (pF)
2500
2000
1500
1000
Coss
Crss
500
VDS = 15 V
ID = 30 A
8
6
4
2
0
0
0
5
10
15
20
25
30
0
6
VDS -- Drain-to-Source Voltage (V)
12
18
Qg -- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
VGS = 10 V
ID = 30 A
I S -- Source Current (A)
rDS(on) -- On-Resiistance
(Normalized)
1.6
1.2
0.8
TJ = 150_C
TJ = 25_C
10
0.4
0.0
--50
1
--25
0
25
50
75
100
125
TJ -- Junction Temperature (_C)
Document Number: 72420
S-41696—Rev. B, 20-Sep-04
150
175
0
0.3
0.6
0.9
1.2
1.5
VSD -- Source-to-Drain Voltage (V)
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SUU50N03-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
25
Limited
by rDS(on)
10, 100 ms
100
I D -- Drain Current (A)
I D -- Drain Current (A)
20
15
10
5
10
1 ms
10 ms
100 ms
1
1s
10 s
TA = 25_C
Single Pulse
0.1
0
100 s
dc
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS -- Drain-to-Source Voltage (V)
TA -- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
10
100
Square Wave Pulse Duration (sec)
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Document Number: 72420
S-41696—Rev. B, 20-Sep-04
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Vishay
Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
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Document Number: 91000
Revision: 08-Apr-05
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