SUU50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a, b 0.007 @ VGS = 10 V 25 0.010 @ VGS = 4.5 V 18 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU50N03-07 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ a, b TA = 25_C TA = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25_C Operating Junction and Storage Temperature Range V 25 ID 18 IDM 100 IS 25 TC = 25_C Maximum Power Dissipation Unit A 88 PD W 8.3a, b TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambienta Junction-to-Case Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.4 1.7 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. t v 10 sec. Document Number: 71295 S-01707—Rev. A, 07-Aug-00 www.vishay.com 1 SUU50N03-07 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V V 2.0 50 Forward Transconductanceb rDS(on) gfs 0.007 VGS = 10 V, ID = 20 A, TJ = 125_C 0.011 VGS = 4.5 V, ID = 20 A 0.010 VDS = 15 V, ID = 20 A m mA A VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb nA 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 3720 VGS = 0 V, VDS = 25 V, F = 1 MHz 715 pF 370 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 11 tr 6 15 50 100 11 20 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 60 VDS = 15 V, VGS = 10 V, ID = 50 A VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W tf 120 12 nC 25 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 100 ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71295 S-01707—Rev. A, 07-Aug-00 SUU50N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 250 VGS = 10 thru 6 V 5V 100 I D – Drain Current (A) I D – Drain Current (A) 200 150 4V 100 50 2V 80 60 TC = 125_C 40 25_C 20 3V –55_C 0 0 2 4 6 8 0 0.0 10 VDS – Drain-to-Source Voltage (V) 1.0 Transconductance 2.0 2.5 3.0 3.5 4.0 4.5 On-Resistance vs. Drain Current 0.020 r DS(on)– On-Resistance ( W ) TC = –55_C 100 25_C 80 125_C 60 40 20 0 0.015 0.010 VGS = 4.5 V VGS = 10 V 0.005 0.000 0 10 20 30 40 0 50 20 40 ID – Drain Current (A) 60 80 100 48 60 ID – Drain Current (A) Capacitance Gate Charge 5000 10 V GS – Gate-to-Source Voltage (V) Ciss 4000 C – Capacitance (pF) 1.5 VGS – Gate-to-Source Voltage (V) 120 g fs – Transconductance (S) 0.5 3000 2000 Coss 1000 VDS = 15 V ID = 50 A 8 6 4 2 Crss 0 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71295 S-01707—Rev. A, 07-Aug-00 30 0 12 24 36 Qg – Total Gate Charge (nC) www.vishay.com 3 SUU50N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 TJ = 150_C 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 10 TJ = 25_C 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 30 1000 24 100 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on) 18 12 6 10 ms 100 ms 10 1 ms 10 ms 100 ms 1 1s 0 10 s TA = 25_C Single Pulse 0.1 100 s, dc 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71295 S-01707—Rev. A, 07-Aug-00