VISHAY SUD45P03-10

SUD45P03-10
Vishay Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.010 @ VGS = –10 V
–15
0.018 @ VGS = –4.5 V
–12
VDS (V)
–30
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD45P03-10
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–30
Gate-Source Voltage
VGS
"20
TA = 100_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
ID
–8
IDM
–100
IS
–15
TA = 25_C
Operating Junction and Storage Temperature Range
A
70
TC = 25_C
Maximum Power Dissipationb
V
–15
TA = 25_C
Continuous Drain Currentb
Unit
PD
TJ, Tstg
W
4b
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb
RthJA
30
Maximum Junction-to-Case
RthJC
1.8
Unit
_
_C/W
Notes
a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical
Characteristics).
b. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70766
S-02596—Rev. D, 21-Nov-00
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SUD45P03-10
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = –250 mA
–30
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = –30 V, VGS = 0 V
–1
VDS = –30 V, VGS = 0 V, TJ = 125_C
–50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
rDS(on)
gfs
V
VDS = –5 V, VGS = –10 V
–50
VDS = –5 V, VGS = –4.5 V
–20
m
mA
A
VGS = –10 V, ID = –15 A
0.010
VGS = –10 V, ID = –15 A, TJ = 125_C
0.015
VGS = –4.5 V, ID = –15 A
0.018
VDS = –15 V, ID = –15 A
nA
20
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
6000
VGS = 0 V, VDS = –25 V, f = 1 MHz
pF
1100
700
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
15
25
tr
375
550
100
200
140
250
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
90
VDS = –15 V, VGS = –10 V, ID = –45 A
150
20
nC
16
VDD = –15 V, RL = 0.33 W
ID ^ –45 A, VGEN = –10 V, RG = 2.4 W
tf
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
100
A
Diode Forward Voltagea
VSD
IF = –45 A, VGS = 0 V
1.0
1.5
V
trr
IF = –45 A, di/dt = 100 A/ms
55
100
ns
Source-Drain Reverse Recovery Time
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 70766
S-02596—Rev. D, 21-Nov-00
SUD45P03-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
100
VGS = 10, 9, 8, 7 V
200
80
I D – Drain Current (A)
I D – Drain Current (A)
6V
150
5V
100
4V
50
60
40
TC = 125_C
20
25_C
3V
–55_C
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
0.05
TC = –55_C
r DS(on)– On-Resistance ( W )
g fs – Transconductance (S)
0.04
25_C
60
125_C
40
20
0
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0.00
0
10
20
30
40
50
0
20
40
ID – Drain Current (A)
60
80
100
ID – Drain Current (A)
Capacitance
Gate Charge
8000
20
V GS – Gate-to-Source Voltage (V)
Ciss
C – Capacitance (pF)
6000
4000
Cos
2000
s
VDS = 15 V
ID = 45 A
16
12
8
4
Crs
s
0
0
0
5
10
15
20
25
VDS – Drain-to-Source Voltage (V)
Document Number: 70766
S-02596—Rev. D, 21-Nov-00
30
0
30
60
90
120
Qg – Total Gate Charge (nC)
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SUD45P03-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
1.6
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
VGS = 10 V
ID = 45 A
1.2
0.8
TJ = 150_C
TJ = 25_C
10
0.4
0.0
–50
1
–25
0
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
TJ – Junction Temperature (_C)
THERMAL RATINGS
Safe Operating Area
20
500
16
100
I D – Drain Current (A)
I D – Drain Current (A)
Maximum Drain Current vs.
Ambiemt Temperature
12
8
10, 100 ms
Limited
by rDS(on)
1 ms
10
10 ms
100 ms
1s
1
TA = 25_C
Single Pulse
4
dc
0
0.1
0
25
50
75
100
125
150
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TA – Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
100
500
Square Wave Pulse Duration (sec)
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Document Number: 70766
S-02596—Rev. D, 21-Nov-00