SUD50N02-12P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c APPLICATIONS 0.026 @ VGS = 4.5 V 27c D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-12P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TC= 100_C Pulsed Drain Current ID 28c A IDM 90 IS 4 TC = 25_C PD 33.3 TA = 25_C PD 6a TJ, Tstg - 55 to 175 Continuous Source Current (Diode Conduction)a Maximum Power Dissipation V 40c TC = 25_C Continuous Drain Currenta Unit Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol t v 10 sec Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 20 25 40 50 3.7 4.5 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A. Document Number: 72095 S-31269—Rev. B, 16-Jun-03 www.vishay.com 1 SUD50N02-12P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V gfs 0.012 W 0.0143 VGS = 4.5 V, ID = 15 A Forward Transconductanceb mA A 0.0095 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.021 VDS = 15 V, ID = 20 A 0.026 10 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 180 Gate Resistance RG 3.0 Total Gate Chargec Qg 7.5 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 1000 VGS = 0 V, VDS = 10 V, f = 1 MHz W 12 nC 2.6 VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W td(off) Fall Timec pF p 3.5 VDS = 10 V, VGS = 4.5 V, ID = 50 A tr Turn-Off Delay Timec 370 tf 11 20 10 15 24 35 9 15 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.1 1.5 V trr IF = 50 A, di/dt = 100 A/ms 20 40 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 90 90 6V TC = - 55_C VGS = 10 thru 7 V 75 60 I D - Drain Current (A) I D - Drain Current (A) 75 5V 45 4V 30 15 25_C 60 125_C 45 30 15 3V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Document Number: 72095 S-31269—Rev. B, 16-Jun-03 SUD50N02-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 50 0.040 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 0.035 TC = - 55_C 40 25_C 30 125_C 20 10 0.030 VGS = 4.5 V 0.025 0.020 0.015 VGS = 10 V 0.010 0.005 0 0.000 0 10 20 30 40 0 50 15 30 ID - Drain Current (A) Capacitance 75 90 Gate Charge V GS - Gate-to-Source Voltage (V) 10 1200 C - Capacitance (pF) 60 ID - Drain Current (A) 1500 Ciss 900 600 Coss Crss 300 VDS = 10 V ID = 50 A 8 6 4 2 0 0 0 4 8 12 16 20 0 4 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 12 16 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S - Source Current (A) 1.6 8 Qg - Total Gate Charge (nC) 1.8 r DS(on)- On-Resistance ( W ) (Normalized) 45 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (_C) Document Number: 72095 S-31269—Rev. B, 16-Jun-03 150 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N02-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 20 Limited by rDS(on) 10, 100 ms 100 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 100 ms 1s 10 s 100 s dc 1 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72095 S-31269—Rev. B, 16-Jun-03