FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors • High Collector-Base Breakdown Voltage : BVCBO = -550V • High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) • Industrial Use TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 550 Units V VCEO Collector-Emitter Voltage - 550 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -2 A ICP Collector Current (Pulse) -4 A PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C C B R1 R2 R 1 ≅ 600Ω R 2 ≅ 150Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = - 100uA, IE = 0 Min. - 550 BVCEO Collector-Emitter Breakdown Voltage IC = - 500uA, IB = 0 - 550 BVEBO Emitter-Base Breakdown Voltage IE = - 200mA, IC = 0 -6 ICBO Collector Cut-off Current VCE = - 550V, IE = 0 IEBO Emitter Cut-off Current VEB = - 6V, IC = 0 hFE DC Current Gain VCE = - 4V, IC = - 1A VCE(sat) Collector-Emitter Saturation Voltage IC = - 1A, IB = - 20mA -1.0 - 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = - 1A, IB = - 20mA -1.5 - 2.0 V ©2002 Fairchild Semiconductor Corporation 400 Typ. Max. Units V V V -100 µA -10 -20 mA 550 700 Rev. A, June 2002 FJPF9020 Typical Characteristics -3.0 1000 VCE = - 4V IB = - 40mA o 125 C -2.0 HFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT -2.5 IB = - 15mA -1.5 IB = - 3mA -1.0 IB = - 1.5mA o 75 C o 25 C o - 25 C 100 -0.5 -0.0 10 -0 -1 -2 -3 -4 - 0.03 -5 -0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE -1 -4 IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic Figure 2. DC current Gain -3 -4 VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC / IB = 50 -3 -2 IC = - 2A -1 IC = - 1A -0 -1E-3 -0.01 -0.1 -2 o 125 C o 75 C -1 o o 25 C - 25 C -0 - 0.2 - 0.4 IB [A], BASE CURRENT -1 -4 IC [A], COLLECTOR CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage 1000 -2.0 f = 1MHz Cob [pF], OUTPUT CAPACITANCE IC [A], COLLECTOR CURRENT VCE = - 4V -1.5 -1.0 -0.5 o 125 C o 25 C o 75 C o 100 - 25 C -0.0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 VBE [V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation -3.0 -0 -5 -10 -15 -20 -25 VCB [V], COLLECTOR-BASE VOLTAGE Figure 6. Output Capacitance Rev. A, June 2002 FJPF9020 Typical Characteristics (Continued) 20 IC [A], COLLECTOR CURRENT IC (Pulse) 100ms IC (DC) -1 10ms -0.1 -0.01 Single Pulse o Ta=25 C -1E-3 -1 -10 -100 -1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation PC [W], COLLECTOR POWER DISSIPATION -10 15 10 5 0 0 25 50 75 100 125 150 175 o TC [ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, June 2002 FJPF9020 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H7