TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS(ON) (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❑ Low on resistance ❑ Independent, electrically isolated N- and P-channels ❑ Low input capacitance ❑ Fast switching speeds ❑ Free from secondary breakdowns ❑ Low input and output leakage Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Application ❑ Medical Ultrasound Transmitters ❑ High voltage pulsers ❑ Amplifiers ❑ Buffers ❑ Piezoelectric transducer drivers ❑ General purpose line drivers Package Option ❑ Logic level interfaces S1 Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ±20V Soldering Temperature* 8 D1 N-Channel Absolute Maximum Ratings* Operating and Storage Temperature 1 G1 2 7 D1 S2 3 6 D2 5 D2 P-Channel -55°C to +150°C G2 300°C 4 *Distance of 1.6mm from case for 10 seconds. SO-8 Package (top view) 04/23/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TC2320 N-Channel Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ BVDSS Drain-to-Source Breakdown Voltage 200 VGS(th) Gate Threshold Voltage 0.6 ∆V GS(th) Max Unit Conditions V ID = 100µA, VGS = 0V 2.0 V VGS = VDS, ID = 1mA Change in VGS(th) with Temperature -4.5 mV/°C ID = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current 1.0 µA VGS = 0V, VDS = 100V 10.0 µA VGS = 0V, VDS = Max Rating 1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 0.6 A 1.2 VGS = 10V, VDS = 25V Static Drain-to-Source ON-State Resistance 8.0 Ω VGS = 4.5V, ID = 150mA 7.0 Ω VGS = 10V, ID = 1.0A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 60 CRSS Reverse Transfer Capacitance 23 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 150 m Ω RDS(ON) VGS = 4.5V, VDS = 25V VGS = 4.5V, ID = 150mA VDS = 25V, ID = 200mA 110 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V ID = 150mA RGEN = 25Ω V ISD = 200mA, VGS = 0V ns ISD = 200mA, VGS = 0V 300 Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TC2320 P-Channel Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage -200 VGS(th) Gate Threshold Voltage -1.0 ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Typ -0.25 -0.7 -0.75 -2.1 Static Drain-to-Source ON-State Resistance Max Conditions V VGS = 0V, ID = -2mA -2.4 V VGS = VDS, ID= -1mA 4.5 mV/°C VGS = VDS, ID= -1mA -100 nA VGS = ± 20V, VDS = 0V -10 µA VGS = 0V, VDS = Max Rating -1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C A 10 15 8.0 12 ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 GFS Forward Transconductance CISS Input Capacitance 75 125 COSS Common Source Output Capacitance 20 85 CRSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 15 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 100 Unit 250 Ω VGS = -10V, VDS = -25V VGS = -4.5V, ID = -100mA VGS = -10V, ID = -200mA %/°C VGS = -10V, ID = -200mA VDS = -25V, ID = -200mA m pF VGS = 0V, VDS = -25V f = 1 MHz ns -1.8 300 VGS = -4.5V, VDS = -25V Ω Symbol V VGS = 0V, ISD = -0.5A ns VGS = 0V, ISD = -0.5A Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 03/23/02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 3 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com