VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) Order Number / Package 60V 5.0Ω 0.75A VN10KN3 TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls Package Option ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 30V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN10K Thermal Characteristics Package ID (continuous)1,2 TO-92 ID (pulsed) 0.31A Power Dissipation @ TC = 25°C 1.0A θjc θja °C/W °C/W 1.0W 125 170 IDR IDRM 0.31A 1.0A Notes: 1. ID (continuous) is limited by max rated Tj. 2. VN0106N3 can be used if an ID (continuous) of 0.5 is needed. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 60 VGS(th) Gate Threshold Voltage 0.8 ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max Unit Conditions V VGS = 0V, ID = 100µA V VGS = VDS , ID = 1mA mV/°C VGS = VDS, ID = 1mA 100 nA VGS = 15V, VDS = 0V 10 µA VGS = 0V, VDS = 45V 500 µA VGS = 0V, VDS = 45V, TA 125°C A VGS = 10V, VDS = 10V Ω VGS = 5V, ID = 0.2A 2.5 -3.8 ID(ON) ON-State Drain Current 0.75 RDS(ON) Static Drain-to-Source ON-State Resistance ∆RDS(th) Change in RDS(th) with Temperature GFS Forward Transconductance CISS Input Capacitance 48 60 COSS Common Source Output Capacitance 16 25 CRSS Reverse Transfer Capacitance 2 5 t(ON) Turn-ON Time 10 t(OFF) Turn-OFF Time 10 VSD Diode Forward Voltage Drop 0.8 V VGS = 0V, ISD = 0.5A trr Reverse Recovery Time 160 ns VGS = 0V, ISD = 0.5A 7.5 Ω VGS = 10V, ID = 500mA %/°C VGS = 10V, ID = 500mA, 100 m Ω 5.0 0.7 VDS = 10V, ID = 500mA pF VDS = 25V, VGS = 0V f = 1 MHz ns VDD = 15V, ID = 0.6A, RGEN = 25Ω Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN10K Typical Performance Curves Output Characteristics Saturation Characteristics 1.0 1.0 7V VGS =10V VGS =10V 9V 0.8 0.8 8V 6V ID (amperes) ID (amperes) 6V 0.6 5V 0.4 0.6 5V 0.4 4V 4V 0.2 0.2 3V 3V 2V 0 0 10 20 30 2V 0 40 0 50 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 250 2 150 100 PD (watts) Ω GFS (m ) 200 VDS = 10V 300µs, 2% Duty Cycle Pulse Test 50 TO-92 1 0 0 0 200 400 600 800 0 1000 25 ID (mA) 75 100 125 150 TC (°C) Switching Waveform Maximum Rated Safe Operating Area 10 Output Voltage (volts) 10 TC = 25°C 1.0 5 0 TO-92 (DC) Input Voltage (volts) ID (amperes) 50 0.1 15 10 5 0 0.01 1 10 100 0 1000 VDS (volts) 10 20 30 t – Time(ns) 3 40 50 VN10K Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Gate-to-Source Voltage 100 VDS = 0.1V RDS(ON) (ohms) BVDSS (normalized) 1.1 1.0 10 0.9 1 -50 0 50 100 1 150 10 Output Conductance vs Drain Current Transfer Characteristics 1.0 1.0 VDS = 10V 300µs, 2% DUTY CYCLE PULSE TEST 0.8 VDS = 25V 80µs, 1% DUTY CYCLE PULSE TEST 0.6 GFS (mhos) ID (amperes) 100 VGS (Volts) Tj (°C) 0.4 REDUCTION DUE TO HEATING 0.1 0.2 0 0.01 0 2 4 6 8 0.01 10 0.1 VGS (volts) Capacitance vs. Drain-to-Source Voltage Transconductance vs Gate-Source Voltage 50 250 VDS = 10V 3000µs, 2% DUTY CYCLE PULSE TEST CISS 200 Ω Gfs (m ) 40 C (picofarads) 1.0 ID (amperes) 30 20 150 100 COSS 10 50 CRSS 0 0 0 10 20 30 40 50 0 VDS (volts) 2 4 6 8 10 VGS (volts) 11/12/01 ©2001 Supertex Inc. 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