BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package • Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR360L3) $ 6 4 # 6 4 " ! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS466L6 Marking Pin Configuration Package AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value TR1 4.5 TR2 6 Collector-emitter voltage Unit V VCES TR1 15 TR2 15 Collector-base voltage VCBO TR1 15 TR2 15 Emitter-base voltage VEBO TR1 1.5 TR2 2 Collector current mA IC TR1 50 TR2 35 1 Sep-01-2003 BFS466L6 Maximum Ratings Parameter Symbol Base current IB Value mA TR1 5 TR2 4 Total power dissipation1) mW Ptot TR1, TS ≤ 104°C 200 TR2, TS ≤ 102°C 210 Junction temperature °C Tj TR1 150 TR2 150 Ambient temperature Unit TA TR1 -65 ... 150 TR2 -65 ... 150 Storage temperature T stg TR1 -65 ... 150 TR2 -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS Value Unit K/W TR1 ≤ 230 TR2 ≤ 230 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2 Sep-01-2003 BFS466L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO TR1, IC = 1 mA, IB = 0 4.5 5 - TR2, IC = 1 mA, IB = 0 6 9 - Collector-emitter cutoff current µA ICES TR1, V CE = 15 V, V BE = 0 - - 10 TR2, V CE = 15 V, V BE = 0 - - 10 Collector-base cutoff current nA ICBO TR1, V CB = 5 V, IE = 0 - - 100 TR2, V CB = 5 V, IE = 0 - - 100 Emitter-base cutoff current µA IEBO TR1, V EB = 0,5 V, IC = 0 - - 1 TR2, V EB = 1 V, I C = 0 - - 1 DC current gain hFE - TR1, IC = 20 mA, VCE = 3 V - 130 - TR2, IC = 20 mA, VCE = 3 V 90 130 160 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT GHz TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz 16 22 - TR2, IC = 15 mA, VCE = 3 V, f = 1 GHz 11 14 - Collector-base capacitance pF Ccb TR1, V CB = 3 V, f = 1 MHz, emitter grounded - 0.33 0.5 TR2, V CB = 5 V, f = 1 MHz, emitter grounded - 0.3 0.45 TR1, V CE = 3 V, f = 1 MHz, base grounded - 0.17 - TR1, V CE = 3 V, f = 1 MHz, base grounded - 0.17 - TR1, V EB = 0,5 V, f = 1 MHz, collector grounded - 0.57 - TR2, V EB = 0,5 V, f = 1 MHz, collector grounded - 0.48 - Collector emitter capacitance Unit Cce Emitter-base capacitance Ceb 3 Sep-01-2003 BFS466L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) dB Noise figure F TR1, IC=5mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt - 1.1 - TR1, IC=5mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt - 1.4 - TR2, IC=3mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt - 1 - TR2, IC=3mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt - 1.4 - - 14.5 - - 10 - - 14.5 - - 10 - - 12.5 - - 9 - - 12.5 - - 8.5 - Power gain, maximum available1) G ma TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 3 GHz TR2, IC = 15 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz TR2, IC = 15 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 3 GHz |S 21e|2 Transducer gain TR1, IC = 20 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 1.8GHz TR1, IC = 20 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 3GHz TR2, IC = 15 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 1.8GHz TR2, IC = 15 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output 2) dBm IP 3 TR1, V CE=3V, IC=20mA, ZS=ZL=50Ω, f=1.8GHz - 28 - TR2, V CE=3V, IC=15mA, ZS=ZL=50Ω, f=1.8GHz - 24.5 - TR1, IC=20mA, V CE=3V, ZS=ZL=50Ω, f=1.8GHz - 12 - TR1, IC=15mA, V CE=3V, ZS=ZL=50Ω, f=1.8GHz - 9 - 1dB Compression point, at output P -1dB 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 4 Sep-01-2003