BFS386L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6 Low voltage/ low current operation 1 For low noise amplifiers For oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: TR1: 1.0dB at 1.8 GHz P-TSLP-6-1 TR2: 1.1 dB at 1.8 GHz 6 T R 1 5 4 T R 2 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFS386L6 FD Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value TR1 6 TR2 6 Collector-emitter voltage Unit V VCES TR1 15 TR2 15 Collector-base voltage VCBO TR1 15 TR2 15 Emitter-base voltage VEBO TR1 2 TR2 2 Collector current mA IC TR1 35 TR2 80 1 Feb-28-2002 BFS386L6 Maximum Ratings Parameter Symbol Base current IB Value mA TR1 5 TR2 14 Total power dissipation1) mW Ptot TS = tbd °C, TR1 tbd TS = tbd °C, TR2 tbd Junction temperature °C Tj TR1 150 TR2 150 Ambient temperature Unit TA TR1 -65 ... 150 TR2 -65 ... 150 Storage temperature Tstg TR1 -65 ... 150 TR2 -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit K/W TR1 tbd TR2 tbd 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2 Feb-28-2002 BFS386L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 1 mA, IB = 0 , TR1 6 9 - IC = 1 mA, IB = 0 , TR2 6 9 - Collector -base cutoff current nA ICBO VCB = 5 V, IE = 0 , TR1 - - 100 VCB = 5 , IE = 0 , TR1 - - 100 Emitter-base cutoff current µA IEBO VEB = 1 V, IC = 0 , TR1 - - 1 VEB = 1 V, IC = 0 , TR2 - - 1 DC current gain- hFE - IC = 15 mA, VCE = 3 V, TR1 60 100 200 IC = 40 mA, VCE = 3 V, TR2 60 100 200 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency Unit GHz fT IC = 15 mA, VCE = 3 V, f = 1 GHz, TR1 - 14 - - 14 - IC = 40 mA, VCE = 3 V, f = 1 GHz, TR2 Collector-base capacitance pF Ccb VCB = 5 V, f = 1 MHz, emitter grounded, TR1 - 0.3 - VCB = 5 V, f = 1 MHz, emitter grounded, TR2 - 0.5 - VCE = 5 V, f = 1 MHz, base grounded, TR1 - 0.15 - VCE = 5 V, f = 1 MHz, base grounded, TR2 - 0.2 - VEB = 0.5 V, f = 1 MHz, collector grounded, TR1 - 0.45 - VEB = 0.5 V, f = 1 MHz, collector grounded, TR2 - 1 - Collector emitter capacitance Cce Emitter-base capacitance Ceb 3 Feb-28-2002 BFS386L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics (verified by random sampling) Noise figure dB F IC = 3 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz, TR1 - 1 - IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz, TR2 - 1.1 - IC = 15 mA, VCE = 3 V, f = 1.8 GHz, TR1 - 15.5 - IC = 15 mA, VCE = 3 V, f = 3 GHz, TR1 - 11 - IC = 40 mA, VCE = 3 V, f = 1.8 GHz, TR2 - 13.5 - IC = 40 mA, VCE = 3 V, f = 3 GHz, TR2 - 9 - VCE = 3 V, IC = 15 mA, f = 1.8 GHz, TR1 - 13 - VCE = 3 V, IC = 15 mA, f = 3 GHz, TR1 - 9 - VCE = 3 V, IC = 40 mA, f = 1.8 GHz, TR2 - 11 - VCE = 3 V, IC = 40 mA, f = 3 GHz, TR2 - 6.5 - Power gain, maximum available1) Gma |S21|2 Insertion power gain Third order intercept point at output2) dBm OIP3 VCE = 3 V, IC = 15 mA, f = 1.8 GHz, TR1 - tbd - VCE = 3 V, IC = 40 mA, f = 1.8 GHz, TR2 - tbd - IC = 15 mA, VCE = 3 V, f = 1.8 GHz, TR1 - tbd - IC = 40 mA, VCE = 3 V, f = 1.8 GHz, TR2 - tbd - 1dB Compression point3) P-1dB 1G 1/2 ma = |S21 / S12| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3DC current at no input power 4 Feb-28-2002