LINER LTC3776EGN

LTC3776
Dual 2-Phase, No RSENSETM,
Synchronous Controller for
DDR/QDR Memory Termination
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FEATURES
DESCRIPTIO
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The LTC®3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory
termination applications. The second controller regulates
its output voltage to 1/2 VREF while providing symmetrical
source and sink output current capability.
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No Current Sense Resistors Required
Out-of-Phase Controllers Reduce Required
Input Capacitance
VOUT2 Tracks 1/2 VREF
Symmetrical Source/Sink Output Current
Capability (VOUT2)
Spread Spectrum Operation (When Enabled)
Wide VIN Range: 2.75V to 9.8V
Constant Frequency Current Mode Operation
0.6V ±1.5% Voltage Reference (VOUT1)
Low Dropout Operation: 100% Duty Cycle
True PLL for Frequency Locking or Adjustment
Internal Soft-Start Circuitry
Power Good Output Voltage Monitor
Output Overvoltage Protection
Micropower Shutdown: IQ = 9µA
Tiny Low Profile (4mm × 4mm) QFN and Narrow
SSOP Packages
The No RSENSE constant frequency current mode architecture eliminates the need for sense resistors and improves
efficiency. Power loss and noise due to the ESR of the
input capacitance are minimized by operating the two
controllers out of phase.
The switching frequency can be programmed up to 750kHz,
allowing the use of small surface mount inductors and capacitors. For noise sensitive applications, the LTC3776
switching frequency can be externally synchronized from
250kHz to 850kHz, or can be enabled for spread spectrum
operation. Forced continuous operation reduces noise and
RF interference. Soft-start for VOUT1 is provided internally
and can be extended using an external capacitor.
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APPLICATIO S
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DDR, DDR II and QDR Memory
SSTL, HSTL Termination Supplies
Servers, RAID Systems
Distributed DC Power Systems
, LTC and LT are registered trademarks of Linear Technology Corporation. Burst Mode
is a registered trademark of Linear Technology Corporation. No RSENSE is a trademark of
Linear Technology Corporation. All other trademarks are the property of their respective
owners. Protected by U.S. Patents including 5481178, 5929620, 6144194, 6580258,
6304066, 6611131, 6498466, patent pending on Spread Spectrum.
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■
The LTC3776 is available in the tiny thermally enhanced
(4mm × 4mm) QFN package or 24-lead SSOP narrow
package.
TYPICAL APPLICATIO
High Efficiency, 2-Phase, DDR Memory (VDDQ and VTT) Supplies
Efficiency vs Load Current
VIN
3.3V
10µF
×2
VIN
SENSE1+ SENSE2+
TG2
SW1
SW2
90
80
70
EFFICIENCY (%)
1.5µH
TG1
100
1.5µH
LTC3776
BG1
BG2
PGND
(VDDQ)VOUT1
2.5V
4A
PGND
VFB1
47µF
59k
ITH2
SGND
15k
VOUT2 (VTT)
1.25V
±4A
VFB2
ITH1
470pF
50
40
30
VREF
187k
60
2200pF
47µF
6.2k
FIGURE 14 CIRCUIT
CHANNEL 2 (VIN = 3.3V)
CHANNEL 1 (VIN = 5V)
CHANNEL 1 (VIN = 3.3V)
CHANNEL 2 (VIN = 5V)
20
10
0
10
100
1000
LOAD CURRENT (mA)
10000
3776 TA01b
3776 TA01a
3776f
1
LTC3776
W W
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AXI U
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ABSOLUTE
RATI GS
(Note 1)
Input Supply Voltage (VIN) ........................ – 0.3V to 10V
PLLLPF, RUN/SS, SYNC/SSEN,
VREF, SENSE1+, SENSE2+, VFB2
IPRG1, IPRG2 Voltages ................. – 0.3V to (VIN + 0.3V)
VFB1, ITH1, ITH2 Voltages ........................... – 0.3V to 2.4V
SW1, SW2 Voltages .............. –2V to VIN + 1V (10V Max)
PGOOD ..................................................... – 0.3V to 10V
TG1, TG2, BG1, BG2 Peak Output Current (<10µs) ..... 1A
Operating Temperature Range (Note 2) ... –40°C to 85°C
Storage Temperature Range .................. –65°C to 125°C
Junction Temperature (Note 3) ............................ 125°C
Lead Temperature (Soldering, 10 sec)
(LTC3776EGN) ..................................................... 300°C
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PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
BG1
PGND
SENSE1+
SW1
IPRG1
VFB1
TOP VIEW
LTC3776EUF
24 23 22 21 20 19
ITH1 1
18 SYNC/SSEN
IPRG2 2
TOP VIEW
SW1
1
24 SENSE1+
IPRG1
2
23 PGND
VFB1
3
22 BG1
ITH1
4
21 SYNC/SSEN
IPRG2
5
20 TG1
PLLLPF
6
19 PGND
SGND
7
18 TG2
VIN
8
17 RUN/SS
VREF
9
16 BG2
17 TG1
PLLLPF 3
16 PGND
25
SGND 4
15 TG2
VIN 5
14 RUN/SS
VREF 6
13 BG2
PGND
SENSE2
+
SW2
9 10 11 12
PGOOD
8
ITH2
VFB2
7
UF PART MARKING
3776
VFB2 10
15 PGND
ITH2 11
14 SENSE2+
PGOOD 12
UF PACKAGE
24-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 25) IS PGND
MUST BE SOLDERED TO PCB
ORDER PART
NUMBER
LTC3776EGN
13 SW2
GN PACKAGE
24-LEAD PLASTIC SSOP
TJMAX = 125°C, θJA = 130°C/ W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications that apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. VIN = 4.2V unless otherwise specified.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
575
9
3
850
20
10
µA
µA
µA
1.95
2.15
2.25
2.45
2.55
2.75
V
V
0.45
0.65
0.85
V
Main Control Loops
Input DC Supply Current
Normal Operation
Shutdown
UVLO
(Note 4)
ITH1 = ITH2 = 1.3V
RUN/SS = 0V
VIN < UVLO Threshold –200mV
Undervoltage Lockout Threshold
VIN Falling
VIN Rising
●
●
Shutdown Threshold at RUN/SS
Start-Up Current Source
RUN/SS = 0V
Regulated Feedback Voltage (VFB1)
0°C to 85°C (Note 5)
–40°C to 85°C
Regulated Feedback Voltage (VFB2)
VREF = 2.5V
Output Voltage Line Regulation (VFB1)
Output Voltage Line Regulation (VFB2)
2.75V < VIN < 9.8V (Note 5)
0.4
0.7
1
µA
●
0.591
0.588
0.6
0.6
0.609
0.612
V
V
●
1.232
1.250
1.268
0.05
0.02
0.2
0.1
V
mV/V
mV/V
3776f
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LTC3776
ELECTRICAL CHARACTERISTICS
The ● denotes specifications that apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. VIN = 4.2V unless otherwise specified.
PARAMETER
CONDITIONS
MIN
Output Voltage Load Regulation
ITH = 0.9V (Note 5)
ITH = 1.7V
VFB1 Input Current
(Note 5)
Overvoltage Protect Threshold
Measured at VFB with Respect to
Regulated Feedback Voltage
10
Overvoltage Protect Hysteresis
TYP
MAX
UNITS
0.12
–0.12
0.5
–0.5
%
%
10
50
nA
13.3
16
%
3
%
Top Gate (TG) Drive 1, 2 Rise Time
CL = 3000pF
40
ns
Top Gate (TG) Drive 1, 2 Fall Time
CL = 3000pF
40
ns
Bottom Gate (BG) Drive 1, 2 Rise Time
CL = 3000pF
50
ns
Bottom Gate (BG) Drive 1, 2 Fall Time
CL = 3000pF
Maximum Current Sense Voltage (Channel 1)
(SENSE1+ – SW1)(∆VSENSE(MAX)) (SOURCE)
IPRG1 = Floating (Note 6)
IPRG1 = 0V
IPRG1 = VIN
IPRG2 = Floating (Note 6)
IPRG2 = 0V
IPRG2 = VIN
●
●
●
●
●
●
110
70
185
127
85
215
125
85
204
147
100
245
140
100
223
167
105
275
mV
mV
mV
mV
mV
mV
Minimum Current Sense Voltage (Channel 2 Only) IPRG2 = Floating (Note 6)
(SENSE2+ – SW2)(∆VSENSE(MAX)) (SINK)
IPRG2 = 0V
IPRG2 = VIN
●
●
●
–130
–90
–208
–112
–75
–188
–94
–60
–168
mV
mV
mV
0.667
0.833
1
ms
460
260
650
550
300
750
610
340
825
kHz
kHz
kHz
Maximum Current Sense Voltage (Channel 2)
(SENSE2+ – SW2)(∆VSENSE(MAX)) (SOURCE)
Soft-Start Time
40
Time for VFB1 to Ramp from 0.05V to 0.55V
ns
Oscillator and Phase-Locked Loop
Oscillator Frequency
Spread Spectrum Frequency Range
Phase-Locked Loop Lock Range
Phase Detector Output Current
Sinking
Sourcing
Spread Spectrum Disabled (SYNC/SSEN = GND)
PLLLPF = Floating
PLLLPF = 0V
PLLLPF = VIN
●
●
●
SYNC/SSEN = VIN
Minimum Switching Frequency
Maximum Switching Frequency
SYNC/SSEN Clocked
Minimum Synchronizable Frequency
Maximum Synchronizable Frequency
450
580
●
●
850
200
1150
kHz
kHz
250
kHz
kHz
fOSC > fSYNC/FCB
fOSC < fSYNC/FCB
–4
4
µA
µA
PGOOD Voltage Low
IPGOOD Sinking 1mA
125
mV
PGOOD Trip Level
VFB with Respect to Set Output Voltage
VFB < Regulated Feedback Voltage, Ramping Positive
VFB < Regulated Feedback Voltage, Ramping Negative
VFB > Regulated Feedback Voltage, Ramping Negative
VFB > Regulated Feedback Voltage, Ramping Positive
PGOOD Output
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LTC3776E is guaranteed to meet specified performance from
0°C to 70°C. Specifications over the –40°C to 85°C operating range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
TJ = TA + (PD • θJA°C/W)
–13
–16
7
10
–10.0
–13.3
10.0
13.3
–7
–10
13
16
%
%
%
%
Note 4: Dynamic supply current is higher due to gate charge being
delivered at the switching frequency.
Note 5: The LTC3776 is tested in a feedback loop that servos ITH to a
specified voltage and measures the resultant VFB voltage.
Note 6: Peak current sense voltage is reduced dependent on duty cycle to
a percentage of value as shown in Figure 2.
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LTC3776
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TYPICAL PERFOR A CE CHARACTERISTICS
TA = 25°C unless otherwise noted.
Step from Sinking to Sourcing
Load Current (CH2)
Efficiency vs Load Current
100
90
VOUT2
100mV/DIV
AC-COUPLED
80
EFFICIENCY (%)
70
60
50
LOAD CURRENT
500mA/DIV
40
30
FIGURE 14 CIRCUIT
CHANNEL 2 (VIN = 3.3V)
CHANNEL 1 (VIN = 5V)
CHANNEL 1 (VIN = 3.3V)
CHANNEL 2 (VIN = 5V)
20
10
0
10
100
1000
LOAD CURRENT (mA)
20µs/DIV
VIN = 3.3V
FIGURE 14 CIRCUIT
3776 G02
10000
3776 G01
Tracking Start-Up with Internal
Soft-Start (CSS = 0µF)
Load Step (Load Connected
Between VOUT1 and VOUT2)
VOUT1
100mV/DIV
AC-COUPLED
VOUT1 =
2.5V
500mV/DIV
VOUT2
100mV/DIV
AC-COUPLED
VOUT2 =
1.25V
LOAD CURRENT
1A/DIV
3776 G03
20µs/DIV
VIN = 3.3V
FIGURE 14 CIRCUIT
VOUT1 SOURCING
VOUT2 SINKING
500µs/DIV
VIN = 3.3V
FIGURE 14 CIRCUIT
Tracking Start-Up with External
Soft-Start (CSS = 0.15µF)
Oscillator Frequency
vs Input Voltage
Maximum Current Sense Voltage
vs ITH1 Pin Voltage (CH1)
4ms/DIV
VIN = 3.3V
FIGURE 14 CIRCUIT
3776 G05
100
4
80
3
CURRENT LIMIT (%)
500mV/DIV
VOUT2 =
1.25V
NORMALIZED FREQUENCY SHIFT (%)
5
VOUT1 =
2.5V
3776 G04
2
1
0
–1
–2
–3
60
40
20
0
–4
–5
2
3
4
8
6
5
7
INPUT VOLTAGE (V)
9
–20
10
3736 G06
0.5
1
1.5
ITH VOLTAGE (V)
2
3776 G07
3776f
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LTC3776
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TYPICAL PERFOR A CE CHARACTERISTICS
Regulated Feedback Voltage
(CH2) vs Temperature
Maximum Current Sense Voltage
vs ITH2 Pin Voltage (CH2)
1.2625
80
1.2600
Regulated Feedback Voltage
(CH1) vs Temperature
0.612
VREF = 2.500V
FEEDBACK VOLTAGE (VFB1) (V)
FEEDBACK VOLTAGE (VFB2) (V)
100
1.2575
60
CURRENT LIMIT (%)
TA = 25°C unless otherwise noted.
1.2550
40
1.2525
20
1.2500
0
1.2475
–20
1.2450
–40
1.2425
–60
–100
0
2.0
1.5
1.0
ITH2 VOLTAGE (V)
1.2375
–60 –40 –20 0 20 40 60
TEMPERATURE (°C)
80
0.596
0.592
100
1.0
RUN/SS PULL-UP CURRENT (µA)
0.7
0.6
0.5
0.4
0.3
0.2
0.9
0.8
0.7
0.6
0.5
0.1
80
0.4
–60 –40 –20 0
20 40 60
TEMPERATURE (°C)
100
80
100
Maximum Current Sense
Threshold (CH2) vs Temperature
2.45
6
4
2
0
–2
–4
–6
80 100
3776 G14
–10
–60 –40 –20 0 20 40 60
TEMPERATURE (°C)
80
100
VIN RISING
2.40
2.35
2.30
VIN FALLING
2.25
2.20
2.15
–8
125
20 40 60
–60 –40 –20 0
TEMPERATURE (°C)
115
–60 –40 –20 0
20 40 60
TEMPERATURE (°C)
2.50
INPUT (VIN) VOLTAGE (V)
NROMALIZED FREQUENCY (%)
130
120
Undervoltage Lockout Threshold
vs Temperature
8
135
125
3736 G13
10
140
IPRG1 = FLOAT
130
Oscillator Frequency
vs Temperature
IPRG2 = FLOAT
145
135
3736 G12
3736 G11
100
Maximum Current Sense Threshold
(CH1) vs Temperature
1.0
0.8
80
3776 G10
RUN/SS Pull-Up Current
vs Temperature
0.9
0
–60 –40 –20 0 20 40 60
TEMPERATURE (°C)
0.588
–60 –40 –20 0
20 40 60
TEMPERATURE (°C)
MAXIMUM CURRENT SENSE THRESHOLD (mV)
Shutdown (RUN) Threshold
vs Temperature
RUN/SS VOLTAGE (V)
0.600
3776 G09
3776 G08
MAXIMUM CURRENT SENSE THRESHOLD (mV)
0.604
1.2400
–80
150
0.608
80
100
3736 G15
2.10
20 40 60
–60 –40 –20 0
TEMPERATURE (°C)
80
100
3736 G16
3776f
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LTC3776
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TYPICAL PERFOR A CE CHARACTERISTICS
Shutdown Quiescent Current
vs Input Voltage
SHUTDOWN CURRENT (µA)
RUN/SS Start-Up Current
vs Input Voltage
0.9
RUN/SS = 0V
RUN/SS PIN PULL-UP CURRENT (µA)
20
18
16
14
12
10
8
6
4
2
0
2
3
4
8
6
5
7
INPUT VOLTAGE (V)
9
10
3736 G17
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U
U
PI FU CTIO S
TA = 25°C unless otherwise noted.
RUN/SS = 0V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
3
4
6
7
5
8
INPUT VOLTAGE (V)
9
10
3736 G18
(UF/GN Package)
ITH1/ITH2 (Pins 1, 8/ Pins 4, 11): Current Threshold and
Error Amplifier Compensation Point. Nominal operating
range on these pins is from 0.7V to 2V. The voltage on
these pins determines the threshold of the main current
comparator.
PLLLPF (Pin 3/Pin 6): Frequency Set/PLL Lowpass Filter.
When synchronizing to an external clock, this pin serves
as the lowpass filter point for the phase-locked loop. Normally a series RC is connected between this pin and ground.
When SYNC/SSEN is tied to GND, this pin serves as the frequency select input. Tying this pin to GND selects 300kHz
operation; tying this pin to VIN selects 750kHz operation.
Floating this pin selects 550kHz operation. When SYNC/
SSEN is tied to VIN to enable spread spectrum operation,
a capacitor (1nF to 4.7nF) should be connected from this
pin to SGND to filter and smooth the changes in frequency
of the LTC3776’s internal oscillator.
SGND (Pin 4/Pin 7): Small-Signal Ground. This pin serves
as the ground connection for most internal circuits.
VIN (Pin 5/Pin 8): Chip Signal Power Supply. This pin
powers the entire chip except for the gate drivers. Externally
filtering this pin with a lowpass RC network (e.g.,
R = 10Ω, C = 1µF) is suggested to minimize noise pickup,
especially in high load current applications.
VREF (Pin 6/Pin 9): Reference voltage input for channel 2.
The positive input of the error amplifier for channel 2 senses
one half of the voltage on this pin through an internal
resistor divider.
PGOOD (Pin 9/Pin 12): Power Good Output Voltage Monitor Open-Drain Logic Output. This pin is pulled to ground
when the voltage on either feedback pin (VFB1, VFB2) is not
within ±13.3% of its nominal set point.
PGND (Pins 12, 16, 20, 25/ Pins 15, 19, 23): Power
Ground. These pins serve as the ground connection for the
gate drivers and the negative input to the reverse current
comparators. The Exposed Pad (UF package) must be
soldered to PCB ground.
RUN/SS (Pin 14/Pin 17): Run Control Input and Optional
External Soft-Start Input. Forcing this pin below 0.65V shuts
down the chip (both channels). Driving this pin to VIN or
releasing this pin enables the chip, using the chip’s internal soft-start. An external soft-start can be programmed by
connecting a capacitor between this pin and ground.
TG1/TG2 (Pins 17, 15/Pins 20, 18): Top (PMOS) Gate Drive
Output. These pins drive the gates of the external P-channel
MOSFETs. These pins have an output swing from PGND to
SENSE+.
SYNC/SSEN (Pin 18/Pin 21): Synchronization Input and
Spread Spectrum Modulation Enable Input. To synchronize
the LTC3776’s switching frequency to an external clock
3776f
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LTC3776
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PI FU CTIO S
(UF/GN Package)
using the phase-locked loop, apply a CMOS compatible
clock with a frequency between 250kHz and 850kHz to this
pin. Tie this pin to GND to enable constant frequency
operation (300kHz, 550kHz or 750kHz as determined by the
state of the PLLLPF pin). Tie this pin to VIN to enable spread
spectrum operation. In spread spectrum mode, the
LTC3776’s frequency is randomly varied between 450kHz
and 580kHz.
BG1/BG2 (Pins 19, 13/Pins 22, 16): Bottom (NMOS) Gate
Drive Output. These pins drive the gates of the external Nchannel MOSFETs. These pins have an output swing from
PGND to SENSE+.
SENSE1+/SENSE2+ (Pins 21, 11/Pins 24, 14): Positive
Input to Differential Current Comparator. Also powers the
gate drivers. Normally connected to the source of the external P-channel MOSFET.
SW1/SW2 (Pins 22, 10/Pins 1, 13): Switch Node Connection to Inductor. Also the negative input to differential peak
current comparator and an input to the reverse current
comparator. Normally connected to the drain of the external P-channel MOSFETs, the drain of the external N-channel
MOSFET and the inductor.
IPRG1/IPRG2 (Pins 23, 2/Pins 2, 5): Three-State Pins to
Select Maximum Peak Sense Voltage Threshold. These pins
select the maximum allowed voltage drop between the
SENSE+ and SW pins (i.e., the maximum allowed drop
across the external P-channel MOSFET) for each channel.
Tie to VIN, GND or float to select one of three discrete
levels.
VFB1/VFB2 (Pins 24, 7/Pins 3, 10): Feedback Pins. Receives
the remotely sensed feedback voltage for its controller.
Exposed Pad (Pin 25/NA): The Exposed Pad (UF Package)
must be soldered to the PCB ground.
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FU CTIO AL DIAGRA (Common Circuitry)
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RVIN
VIN
UNDERVOLTAGE
LOCKOUT
CVIN
VOLTAGE
REFERENCE
VIN
(TO CONTROLLER 1, 2)
0.6V
VREF
0.7µA
SHDN
RUN/SS
EXTSS
tSEC = 1ms
+
INTSS
–
SYNC/SSEN
PLLLPF
SYNC DETECT/
SPREAD
SPECTRUM
ENABLE
VOLTAGE
CONTROLLED
OSCILLATOR
PHASE
DETECTOR
CLK1
CLK2
SLOPE1
SLOPE
COMP
VFB1
SLOPE2
–
UV1
0.54V
+
PGOOD
OV1
SHDN
IPRG1
IPRG2
VOLTAGE
MAXIMUM
CONTROLLED
SENSE VOLTAGE
OSCILLATOR
SELECT
IPROG1
IPROG2
0.9 • VREF/2
+
VFB2
–
UV2
OV2
3776 FD
3776f
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LTC3776
W
FU CTIO AL DIAGRA
U
(Controller 1)
U
VIN
SENSE1+
CIN
RS1
CLK1
S
TG1
MP1
Q
R
SWITCHING
LOGIC
AND
BLANKING
CIRCUIT
OV1
SC1
PGND
SW1
ANTISHOOT
THROUGH
L1
VOUT1
SENSE1+
COUT1
BG1
MN1
PGND
SLOPE1
SW1
–
ICMP
SENSE1+
+
IPROG1
SHDN
–
+
VFB1
R1B
EAMP
+
R1A
–
0.6V
ITH1
EXTSS
INTSS
RITH1
+
OV1
VFB1
SC1
OVP
–
0.68V
+
0.12V
–
VFB1
CITH1
SCP
3776f
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LTC3776
W
FU CTIO AL DIAGRA
U
(Controller 2)
U
SENSE2+
RS2
CLK2
TG2
MP2
Q
S
VIN
R
SWITCHING
LOGIC
AND
BLANKING
CIRCUIT
OV2
SC2
PGND
SW2
ANTISHOOT
THROUGH
L2
SENSE2+
VOUT2
COUT2
BG2
MN2
PGND
SLOPE2
SW2
–
ICMP
SENSE2+
SHDN
+
VFB2
–
+
40k
EAMP
+
VREF
40k
–
120k
40k
ITH2
RITH2
+
OV2
VFB2
SC2
OVP
–
VREF/8
–
VFB2/2
CITH2
SCP
1.1 • VREF/2
SHORT1
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OPERATIO
+
3776 CONT2
(Refer to Functional Diagram)
Main Control Loop
The LTC3776 uses a constant frequency, current mode
architecture with the two controllers operating 180 degrees out of phase. During normal operation, the top
external P-channel power MOSFET is turned on when the
clock for that channel sets the RS latch, and turned off
when the current comparator (ICMP) resets the latch. The
peak inductor current at which ICMP resets the RS latch is
determined by the voltage on the ITH pin, which is driven
by the output of the error amplifier (EAMP). The VFB pin
receives the output voltage feedback signal from an external resistor divider. This feedback signal is compared to a
reference (either the internal 0.6V reference for controller
1 or the divided down VREF pin for CH2) by the EAMP.
3776f
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LTC3776
U
OPERATIO
(Refer to Functional Diagram)
When the load current increases, it causes a slight
decrease in VFB relative to the reference, which in turn
causes the ITH voltage to increase until the average inductor current matches the new load current. While the top
P-channel MOSFET is off, the bottom N-channel MOSFET
is turned on until the beginning of the next cycle.
Shutdown, Soft-Start and Tracking Start-Up
(RUN/SS and TRACK Pins)
The LTC3776 is shut down by pulling the RUN/SS pin low.
In shutdown, all controller functions are disabled and the
chip draws only 9µA. The TG outputs are held high (off)
and the BG outputs low (off) in shutdown. Releasing
RUN/SS allows an internal 0.7µA current source to charge
up the RUN/SS pin. When the RUN/SS pin reaches 0.65V,
the LTC3776’s two controllers are enabled.
The start-up of VOUT1 is controlled by the LTC3776’s
internal soft-start. During soft-start, the error amplifier
EAMP compares the feedback signal VFB1 to the internal
soft-start ramp (instead of the 0.6V reference), which rises
linearly from 0V to 0.6V in about 1ms. This allows the
output voltage to rise smoothly from 0V to its final value,
while maintaining control of the inductor current.
The 1ms soft-start time can be increased by connecting
the optional external soft-start capacitor CSS between the
RUN/SS and SGND pins. As the RUN/SS pin continues to
rise linearly from approximately 0.65V to 1.25V (being
charged by the internal 0.7µA current source), the EAMP
regulates the VFB1 proportionally linearly from 0V to 0.6V.
The start-up of VOUT2 is controlled by the voltage on the
VREF pin. Typically, VOUT1 is connected to the VREF pin to
allow the start-up of VOUT2 to “track” that of 1/2 VOUT1.
Note that if either VOUT1 or VOUT2 is less than 90% (lower
PGOOD threshold) of its regulation point (in either a
startup or short-circuit condition), then channel one’s
inductor current is not allowed to reverse (i.e., discontinuous operation is forced). This is to prevent a minimum ontime condition during startup.
Short-Circuit Protection
When an output is shorted to ground, the switching
frequency of that controller is reduced to 1/5 of the normal
operating frequency.
The short-circuit threshold on VFB2 is based on the smaller
of 0.12V and a fraction of the voltage on the VREF pin. This
also allows VOUT2 to start up and track VOUT1 more easily.
Note that if VOUT1 is truly short-circuited (VOUT1 = VFB1 =
0V), then the LTC3776 will try to regulate VOUT2 to 0V if
VOUT1 is connected to the VREF pin.
Output Overvoltage Protection
As further protection, the overvoltage comparator (OV)
guards against transient overshoots, as well as other more
serious conditions that may overvoltage the output. When
the feedback voltage on the VFB pin has risen 13.33%
above its resolution point, the external P-channel MOSFET
is turned off and the N-channel MOSFET is turned on until
the overvoltage is cleared.
Frequency Selection and Phase-Locked Loop
(PLLLPF and SYNC/SSEN Pins)
The selection of switching frequency is a tradeoff between
efficiency and component size. Low frequency operation
increases efficiency by reducing MOSFET switching losses,
but requires larger inductance and/or capacitance to maintain low output ripple voltage.
The switching frequency of the LTC3776’s controllers can
be selected using the PLLLPF pin.
If the SYNC/SSEN pin is tied to ground, the PLLLPF pin can be
floated, tied to VIN, or tied to SGND to select 550kHz, 750kHz,
or 300kHz constant frequency operation, respectively.
A phase-locked loop (PLL) is available on the LTC3776 to
synchronize the internal oscillator to an external clock
source that connected to the SYNC/SSEN pin. In this case,
a series RC should be connected between the PLLLPF pin
and SGND to serve as the PLL’s loop filter. The LTC3776
3776f
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LTC3776
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OPERATIO
(Refer to Functional Diagram)
phase detector adjusts the voltage on the PLLLPF pin to
align the turn-on of controller 1’s external P-channel
MOSFET to the rising edge of the synchronizing signal.
Thus, the turn-on of controller 2’s external P-channel
MOSFET is 180 degrees out of phase with the rising edge
of the external clock source.
The typical capture range of the LTC3776’s phase-locked
loop is from approximately 200kHz to 1MHz, with a
guarantee over all process variations and temperature to
be between 250kHz and 850kHz. In other words, the
LTC3776’s PLL is guaranteed to lock to an external clock
source whose frequency is between 250kHz and 850kHz.
Alternatively, the SYNC/SSEN pin may be tied to VIN to
–10
Spread Spectrum Operation
Switching regulators can be particularly troublesome in
applications where electromagnetic interference (EMI) is
a concern. Switching regulators operate on a cycle-bycycle basis to transfer power to an output. In most cases,
the frequency of operation is either fixed or is a constant
based on the output load. This method of conversion
creates large components of noise at the frequency of
operation (fundamental) and multiples of the operating
frequency (harmonics). Figures 1a and 1b depict the
–10
RBW = 3kHz
–20
–20
–30
–30
–40
–40
AMPLITUDE (dBm)
AMPLITUDE (dBm)
enable spread spectrum operation (see Spread Spectrum
Operation section).
–50
–60
–70
–80
–50
–60
–70
–80
–90
–90
–100
–100
–110
0
6
12
18
FREQUENCY (MHz)
24
30
–10
–20
–30
–40
–40
AMPLITUDE (dBm)
–30
–50
–60
–70
–80
24
30
37361 F01c
Figure 1c. Output Noise Spectrum of the LTC3776 Spread
Spectrum Buck Switching Converter. Note the Reduction in
Fundamental and Harmonic Peak Spectral Amplitude
Compared to Figure 1a.
RBW = 30Hz
–70
–90
12
18
FREQUENCY (MHz)
610
37361 F01b
–80
–100
6
570
–60
–90
–110
490
530
FREQUENCY (kHz)
–50
–100
0
450
Figure 1b. Zoom-In of Fundamental Frequency of Conventional
Buck Switching Converter
RBW = 1kHz
–20
AMPLITUDE (dBm)
–110
410
37361 F01a
Figure 1a. Output Noise Spectrum of Conventional Buck
Switching Converter (LTC3776 with Spread Spectrum
Disabled) Showing Fundamental and Harmonic Frequencies
–10
RBW = 30Hz
–110
410
450
490
530
FREQUENCY (kHz)
570
610
37361 F01d
Figure 1d. Zoom-In of Fundamental Frequency of the
LTC3776 Spread Spectrum Switching Converter. Note the
>20dB Reduction in Peak Amplitude and Spreading of the
Frequency Spectrum (Between Approximately 450kHz and
580kHz) Compared to Figure 1b.
3776f
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LTC3776
(Refer to Functional Diagram)
output noise spectrum of a conventional buck switching
converter (1/2 of LTC3776 with spread spectrum operation disabled) with VIN = 5V, VOUT = 2.5V and IOUT = 2A.
Unlike conventional buck converters, the LTC3776’s internal oscillator can be selected to produce a clock pulse
whose frequency is randomly varied between 450kHz and
580kHz by tying the SYNC/SSEN pin to VIN. This has the
benefit of spreading the switching noise over a range of
frequencies, thus significantly reducing the peak noise.
Figures 1c and 1d show the output noise spectrum of the
LTC3776 (with spread spectrum operation enabled) with
VIN = 5V, VOUT = 2.5V and IOUT = 1A. Note the significant
reduction in peak output noise (>20dBm).
Dropout Operation
When the input supply voltage (VIN) decreases towards the
output voltage, the rate of change of the inductor current
while the external P-channel MOSFET is on (ON cycle)
decreases. This reduction means that the P-channel MOSFET will remain on for more than one oscillator cycle if the
inductor current has not ramped up to the threshold set by
the EAMP on the ITH pin. Further reduction in the input
supply voltage will eventually cause the P-channel MOSFET to be turned on 100%; i.e., DC. The output voltage will
then be determined by the input voltage minus the voltage
drop across the P-channel MOSFET and the inductor.
Undervoltage Lockout
To prevent operation of the external MOSFETs below safe
input voltage levels, an undervoltage lockout is incorporated
in the LTC3776. When the input supply voltage (VIN) drops
below 2.3V, the external P- and N-channel MOSFETs and
all internal circuitry are turned off except for the undervoltage block, which draws only a few microamperes.
Peak Current Sense Voltage Selection and Slope
Compensation (IPRG1 and IPRG2 Pins)
When controller 1 is operating below 20% duty cycle, the
peak current sense voltage (between the SENSE1+ and
SW1 pins) allowed across the external P-channel MOSFET
is determined by:
∆VSENSE(MAX)1 =
A1(VITH1 – 0.7V )
10
where A1 is a constant determined by the state of the IPRG
pins. Floating the IPRG1 pin selects A1 = 1; tying IPRG to
VIN selects A1 = 5/3; tying IPRG1 to SGND selects A1 =
2/3. The maximum value of VITH1 is typically about 1.98V,
so the maximum sense voltage allowed across the external P-channel MOSFET is 125mV, 85mV or 204mV for the
three respective states of the IPRG1 pin.
When controller 2 is operating below 20% duty cycle, the
peak current sense voltage (between the SENSE2+ and
SW2 pins) allowed across the external P-channel MOSFET
is determined by:
A2(VITH2 – 1.3V )
, VITH2 ≥ 1.3V
4.6
A2(VITH2 – 1.3V )
∆VSENSE(MAX) =
, VITH2 < 1.3V
5.4
where A is a constant determined by the state of the IPRG
pins. Floating the IPRG2 pin selects A2 = 1; tying IPRG2
to VIN selects A = 5/3; tying IPRG2 to SGND selects A2 =
2/3. The maximum value of VITH2 is typically about 1.98V,
so the maximum sense voltage allowed across the external P-channel MOSFET is 147mV, 100mV or 245mV for
the three respective states of the IPRG2 pin. The minimum
value of VITH2 is typically about 0.7V, so the minimum
(most negative) peak sense voltage is –112mV, –75mV or
–188mV, respectively.
∆VSENSE(MAX) =
However, once the controller’s duty cycle exceeds 20%,
slope compensation begins and effectively reduces the
peak sense voltage by a scale factor given by the curve in
Figure 2.
110
100
90
80
SF = I/IMAX (%)
U
OPERATIO
70
60
50
40
30
20
10
0
0
10 20 30 40 50 60 70 80 90 100
DUTY CYCLE (%)
3776 F02
Figure 2. Maximum Peak Current vs Duty Cycle
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(Refer to Functional Diagram)
The peak inductor current is determined by the peak sense
voltage and the on-resistance of the external P-channel
MOSFET:
IPK =
∆VSENSE(MAX)
RDS(ON)
Power Good (PGOOD) Pin
A window comparator monitors both feedback voltages
and the open-drain PGOOD output pin is pulled low when
either or both feedback voltages are not within ±10% of
their reference voltages. PGOOD is low when the LTC3776
is shut down or in undervoltage lockout.
2-Phase Operation
Why the need for 2-phase operation? Until recently, constant frequency dual switching regulators operated both
controllers in phase (i.e., single phase operation). This
means that both topside MOSFETs (P-channel) are turned
on at the same time, causing current pulses of up to twice
the amplitude of those from a single regulator to be drawn
from the input capacitor. These large amplitude pulses
increase the total RMS current flowing in the input capacitor, requiring the use of larger and more expensive input
capacitors, and increase both EMI and power losses in the
input capacitor and input power supply.
With 2-phase operation, the two controllers of the LTC3776
are operated 180 degrees out of phase. This effectively
interleaves the current pulses coming from the topside
MOSFET switches, greatly reducing the time where they
overlap and add together. The result is a significant
reduction in the total RMS current, which in turn allows the
use of smaller, less expensive input capacitors, reduces
shielding requirements for EMI and improves real world
operating efficiency.
Figure 3 shows qualitatively example waveforms for a
single phase dual controller versus a 2-phase LTC3776
system. In this case, 2.5V and 1.8V outputs, each drawing
a load current of 2A, are derived from a 7V (e.g., a 2-cell
Li-Ion battery) input supply. In this example, 2-phase
operation would reduce the RMS input capacitor current
from 1.79ARMS to 0.91ARMS. While this is an impressive
reduction by itself, remember that power losses are
proportional to IRMS2, meaning that actual power wasted
is reduced by a factor of 3.86.
The reduced input ripple current also means that less
power is lost in the input power path, which could include
batteries, switches, trace/connector resistances, and protection circuitry. Improvements in both conducted and
radiated EMI also directly accrue as a result of the reduced
RMS input current and voltage. Significant cost and board
footprint savings are also realized by being able to use
smaller, less expensive, lower RMS current-rated input
capacitors.
Single Phase
Dual Controller
2-Phase
Dual Controller
SW1 (V)
SW2 (V)
IL1
IL2
IIN
3776 F03
Figure 3. Example Waveforms for a Single Phase
Dual Controller vs the 2-Phase LTC3776
Of course, the improvement afforded by 2-phase operation is a function of the relative duty cycles of the two
controllers, which in turn are dependent upon the input
supply voltage. Figure 4 depicts how the RMS input
current varies for single phase and 2-phase dual controllers with 2.5V and 1.8V outputs over a wide input voltage
range.
It can be readily seen that the advantages of 2-phase
operation are not limited to a narrow operating range, but
in fact extend over a wide region. A good rule of thumb for
most applications is that 2-phase operation will reduce the
input capacitor requirement to that for just one channel
operating at maximum current and 50% duty cycle.
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inductor current is limited by the current threshold, set by
the voltage on the ITH pin of the current comparator. The
voltage on the ITH pin is internally clamped, which limits
the maximum current sense threshold ∆VSENSE(MAX).
2.0
INPUT CAPACITOR RMS CURRENT
1.8
SINGLE PHASE
DUAL CONTROLLER
1.6
1.4
2-PHASE
DUAL CONTROLLER
1.2
1.0
The output current that the LTC3776 can provide is given
by:
0.8
0.6
0.4
IOUT(MAX) =
VOUT1 = 2.5V/2A
VOUT2 = 1.8V/2A
0.2
0
2
3
4
8
6
5
7
INPUT VOLTAGE (V)
9
10
3776 F04
Figure 4. RMS Input Current Comparison
The typical LTC3776 application circuit is shown in
Figure 11. External component selection for each of the
LTC3776’s controllers is driven by the load requirement
and begins with the selection of the inductor (L) and the
power MOSFETs (MP and MN).
Power MOSFET Selection
Each of the LTC3776’s two controllers requires two external power MOSFETs: a P-channel MOSFET for the topside
(main) switch and an N-channel MOSFET for the bottom
(synchronous) switch. Important parameters for the power
MOSFETs are the breakdown voltage VBR(DSS) , threshold
voltage VGS(TH), on-resistance RDS(ON) , reverse transfer
capacitance CRSS, turn-off delay tD(OFF) and the total gate
charge QG.
The gate drive voltage is the input supply voltage. Since the
LTC3776 is designed for operation down to low input
voltages, a sublogic level MOSFET (RDS(ON) guaranteed at
VGS = 2.5V) is required for applications that work close to
this voltage. When these MOSFETs are used, make sure
that the input supply to the LTC3776 is less than the absolute maximum MOSFET VGS rating, which is typically 8V.
The P-channel MOSFET’s on-resistance is chosen based
on the required load current. The maximum average
output load current IOUT(MAX) is equal to the peak inductor
current minus half the peak-to-peak ripple current IRIPPLE.
The LTC3776’s current comparator monitors the drain-tosource voltage VDS of the P-channel MOSFET, which is
sensed between the SENSE+ and SW pins. The peak
∆VSENSE(MAX) IRIPPLE
–
RDS(ON)
2
A reasonable starting point is setting ripple current IRIPPLE
to be 40% of IOUT(MAX). Rearranging the above equation
yields:
RDS(ON)(MAX) =
5 ∆VSENSE(MAX)
•
6
IOUT(MAX)
for Duty Cycle < 20%.
However, for operation above 20% duty cycle, slope
compensation has to be taken into consideration to select
the appropriate value of RDS(ON) to provide the required
amount of load current:
RDS(ON)(MAX) =
∆VSENSE(MAX)
5
• SF •
6
IOUT(MAX)
where SF is a scale factor whose value is obtained from the
curve in Figure 2.
These must be further derated to take into account the
significant variation in on-resistance with temperature.
The following equation is a good guide for determining the
required RDS(ON)MAX at 25°C (manufacturer’s specification), allowing some margin for variations in the LTC3776
and external component values:
RDS(ON)(MAX) =
∆VSENSE(MAX)
5
• 0.9 • SF •
6
IOUT(MAX) • ρT
The ρT is a normalizing term accounting for the temperature variation in on-resistance, which is typically about
0.4%/°C, as shown in Figure 5. Junction to case temperature TJC is about 10°C in most applications. For a maximum ambient temperature of 70°C, using ρ80°C ~ 1.3 in
the above equation is a reasonable choice.
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Reasonable starting criteria for selecting the P-channel
MOSFET are that it must typically have a gate charge (QG)
less than 25nC to 30nC (at 4.5VGS) and a turn-off delay
(tD(OFF)) of less than approximately 140ns. However, due
to differences in test and specification methods of various
MOSFET manufacturers, and in the variations in QG and
tD(OFF) with gate drive (VIN) voltage, the P-channel MOSFET
ultimately should be evaluated in the actual LTC3776
application circuit to ensure proper operation.
ρT NORMALIZED ON RESISTANCE
2.0
1.5
1.0
0.5
0
– 50
50
100
0
JUNCTION TEMPERATURE (°C)
150
3776 F07
Figure 5. RDS(ON) vs Temperature
The power dissipated in the top and bottom MOSFETs
strongly depends on their respective duty cycles and load
current. When the LTC3776 is operating in continuous
mode, the duty cycles for the MOSFETs are:
VOUT
VIN
V –V
Bottom N-Channel Duty Cycle = IN OUT
VIN
Top P-Channel Duty Cycle =
The MOSFET power dissipations at maximum output
current are:
PTOP
PBOT
V
= OUT • IOUT (MAX)2 • ρT • RDS(ON) + 2 • VIN2
VIN
• IOUT (MAX) • C RSS • fOSC
V –V
= IN OUT • IOUT (MAX)2 • ρT • RDS(ON)
VIN
Both MOSFETs have I2R losses and the PTOP equation
includes an additional term for transition losses, which are
largest at high input voltages. The bottom MOSFET losses
are greatest at high input voltage or during a short circuit
when the bottom duty cycle is nearly 100%.
The LTC3776 utilizes a nonoverlapping, antishoot-through
gate drive control scheme to ensure that the P- and
N-channel MOSFETs are not turned on at the same time.
To function properly, the control scheme requires that the
MOSFETs used are intended for DC/DC switching applications. Many power MOSFETs, particularly P-channel
MOSFETs, are intended to be used as static switches and
therefore are slow to turn on or off.
Shoot-through between the P-channel and N-channel
MOSFETs can most easily be spotted by monitoring the
input supply current. As the input supply voltage increases, if the input supply current increases dramatically,
then the likely cause is shoot-through. Note that some
MOSFETs that do not work well at high input voltages (e.g.,
VIN > 5V) may work fine at lower voltages (e.g., 3.3V).
Table 1 shows a selection of P-channel MOSFETs from
different manufacturers that are known to work well in
LTC3776 applications.
Selecting the N-channel MOSFET is typically easier, since
for a given RDS(ON), the gate charge and turn-on and turnoff delays are much smaller than for a P-channel MOSFET.
Table 1. Selected P-Channel MOSFETs Suitable for LTC3776
Applications
PART
NUMBER
MANUFACTURER
TYPE
PACKAGE
Si7540DP
Siliconix
Complementary
P/N
PowerPak
SO-8
Si9801DY
Siliconix
Complementary
P/N
SO-8
FDW2520C
Fairchild
Complementary
P/N
TSSOP-8
FDW2521C
Fairchild
Complementary
P/N
TSSOP-8
Si3447BDV
Siliconix
Single P
TSOP-6
Si9803DY
Siliconix
Single P
SO-8
FDC602P
Fairchild
Single P
TSOP-6
FDC606P
Fairchild
Single P
TSOP-6
FDC638P
Fairchild
Single P
TSOP-6
FDW2502P
Fairchild
Dual P
TSSOP-8
FDS6875
Fairchild
Dual P
SO-8
HAT1054R
Hitachi
Dual P
SO-8
On Semi
Dual P
SO-8
NTMD6P02R2-D
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Operating Frequency and Synchronization
The choice of operating frequency, fOSC, is a trade-off
between efficiency and component size. Low frequency
operation improves efficiency by reducing MOSFET switching losses, both gate charge loss and transition loss.
However, lower frequency operation requires more inductance for a given amount of ripple current.
The internal oscillator for each of the LTC3776’s controllers runs at a nominal 550kHz frequency when the PLLLPF
pin is left floating and the SYNC/SSEN pin is tied to GND.
Pulling the PLLLPF to VIN selects 750kHz operation;
pulling the PLLLPF to GND selects 300kHz operation.
Alternatively, the LTC3776 will phase-lock to a clock signal
applied to the SYNC/SSEN pin with a frequency between
250kHz and 850kHz (see Phase-Locked Loop and Frequency Synchronization).
When spread spectrum operation is enabled (SYNC/
SSEN = VIN), the frequency of the LTC3776 is randomly
varied over the range of frequencies between 450kHz and
580kHz. In this case, a capacitor (1nF to 4.7nF) should be
connected between the FREQ pin and SGND to smooth
out the changes in frequency. This not only provides a
smoother frequency spectrum but also ensures that the
switching regulator remains stable by preventing abrupt
changes in frequency. A value of 2200pF is suitable in
most applications.
Inductor Value Calculation
Given the desired input and output voltages, the inductor
value and operating frequency fOSC directly determine the
inductor’s peak-to-peak ripple current:
IRIPPLE =
VOUT ⎛ VIN – VOUT ⎞
⎜
⎟
VIN ⎝ fOSC • L ⎠
Lower ripple current reduces core losses in the inductor,
ESR losses in the output capacitors, and output voltage
ripple. Thus, highest efficiency operation is obtained at
low frequency with a small ripple current. Achieving this,
however, requires a large inductor.
A reasonable starting point is to choose a ripple current
that is about 40% of IOUT(MAX). Note that the largest ripple
current occurs at the highest input voltage. To guarantee
that ripple current does not exceed a specified maximum,
the inductor should be chosen according to:
L≥
VIN – VOUT VOUT
•
fOSC • IRIPPLE VIN
Inductor Core Selection
Once the inductance value is determined, the type of
inductor must be selected. Actual core loss is independent
of core size for a fixed inductor value, but it is very
dependent on inductance selected. As inductance increases, core losses go down. Unfortunately, increased
inductance requires more turns of wire and therefore
copper losses will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can
concentrate on copper loss and preventing saturation.
Ferrite core material saturates “hard,” which means that
inductance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in
inductor ripple current and consequent output voltage
ripple. Do not allow the core to saturate!
Different core materials and shapes will change the size/
current and price/current relationship of an inductor.
Toroid or shielded pot cores in ferrite or permalloy
materials are small and don’t radiate much energy, but
generally cost more than powdered iron core inductors
with similar characteristics. The choice of which style
inductor to use mainly depends on the price vs size
requirements and any radiated field/EMI requirements.
New designs for surface mount inductors are available
from Coiltronics, Coilcraft, Toko and Sumida.
Schottky Diode Selection (Optional)
The Schottky diodes D1 and D2 in Figure 16 conduct
current during the dead time between the conduction of
the power MOSFETs . This prevents the body diode of the
bottom N-channel MOSFET from turning on and storing
charge during the dead time, which could cost as much as
1% in efficiency. A 1A Schottky diode is generally a good
Kool Mµ is a registered trademark of Magnetics, Inc.
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size for most LTC3776 applications, since it conducts a
relatively small average current. Larger diodes result in
additional transition losses due to their larger junction
capacitance. This diode may be omitted if the efficiency
loss can be tolerated.
CIN and COUT Selection
The selection of CIN is simplified by the 2-phase architecture and its impact on the worst-case RMS current drawn
through the input network (battery/fuse/capacitor). It can
be shown that the worst-case capacitor RMS current
occurs when only one controller is operating. The controller with the highest (VOUT)(IOUT) product needs to be used
in the formula below to determine the maximum RMS
capacitor current requirement. Increasing the output current drawn from the other controller will actually decrease
the input RMS ripple current from its maximum value. The
out-of-phase technique typically reduces the input
capacitor’s RMS ripple current by a factor of 30% to 70%
when compared to a single phase power supply solution.
In continuous mode, the source current of the P-channel
MOSFET is a square wave of duty cycle (VOUT)/(VIN). To
prevent large voltage transients, a low ESR capacitor sized
for the maximum RMS current of one channel must be
used. The maximum RMS capacitor current is given by:
CIN Required IRMS ≈
1/ 2
IMAX
VOUT )( VIN – VOUT )
(
VIN
[
]
This formula has a maximum at VIN = 2VOUT, where IRMS
= IOUT/2. This simple worst-case condition is commonly
used for design because even significant deviations do not
offer much relief. Note that capacitor manufacturers’
ripple current ratings are often based on only 2000 hours
of life. This makes it advisable to further derate the
capacitor, or to choose a capacitor rated at a higher
temperature than required. Several capacitors may be
paralleled to meet size or height requirements in the
design. Due to the high operating frequency of the LTC3776,
ceramic capacitors can also be used for CIN. Always
consult the manufacturer if there is any question.
The benefit of the LTC3776 2-phase operation can be calculated by using the equation above for the higher power
controller and then calculating the loss that would have
resulted if both controller channels switched on at the
same time. The total RMS power lost is lower when both
controllers are operating due to the reduced overlap of
current pulses required through the input capacitor’s ESR.
This is why the input capacitor’s requirement calculated
above for the worst-case controller is adequate for the
dual controller design. Also, the input protection fuse resistance, battery resistance, and PC board trace resistance
losses are also reduced due to the reduced peak currents
in a 2-phase system. The overall benefit of a multiphase
design will only be fully realized when the source impedance of the power supply/battery is included in the efficiency testing. The sources of the P-channel MOSFETs
should be placed within 1cm of each other and share a
common CIN(s). Separating the sources and CIN may produce undesirable voltage and current resonances at VIN.
A small (0.1µF to 1µF) bypass capacitor between the chip
VIN pin and ground, placed close to the LTC3776, is also
suggested. A 10Ω resistor placed between CIN (C1) and
the VIN pin provides further isolation between the two
channels.
The selection of COUT is driven by the effective series
resistance (ESR). Typically, once the ESR requirement is
satisfied, the capacitance is adequate for filtering. The
output ripple (∆VOUT) is approximated by:
⎛
1 ⎞
∆VOUT ≈ IRIPPLE⎜ ESR +
⎟
⎝
8fC OUT ⎠
where f is the operating frequency, COUT is the output
capacitance and IRIPPLE is the ripple current in the inductor. The output ripple is highest at maximum input voltage
since IRIPPLE increases with input voltage.
Setting Output Voltage
The LTC3776’s channel 1 output voltage is set by an
external feedback resistor divider carefully placed across
the output, as shown in Figure 6. The regulated output
voltage is determined by:
⎛ R ⎞
VOUT 1 = 0.6V • ⎜ 1 + B ⎟
⎝ RA ⎠
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17
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Channel 2’s output voltage is set to 1/2 VREF by connecting
the VFB2 pin to VOUT2. To improve the frequency response,
a feed-forward capacitor, CFF, may be used. Great care
should be taken to route the VFB line away from noise
sources, such as the inductor or the SW line.
VOUT1
CFF
VOUT2
RB
LTC3776
VFB1
During soft-start, the start-up of VOUT1 is controlled by
slowly ramping the positive reference to the error amplifier
from 0V to 0.6V, allowing VOUT1 to rise smoothly from 0V
to its final value. The default internal soft-start time is 1ms.
This can be increased by placing a capacitor between the
RUN/SS pin and SGND. In this case, the soft-start time will
be approximately:
tSS1 = CSS •
VFB2
600mV
0.7µA
RA
VREF Pin
3776 F06
The regulation of VOUT2 is controlled by the voltage on the
VREF pin. Normally this pin is used in DDR memory
termination applications so that VOUT2 tracks 1/2 VOUT1 as
shown in Figure 8.
Figure 6. Setting Output Voltage
Run/Soft Start Function
The RUN/SS pin is a dual purpose pin that provides the
optional external soft-start function and a means to shut
down the LTC3776.
Pulling the RUN/SS pin below 0.65V puts the LTC3776 into
a low quiescent current shutdown mode (IQ = 9µA). If
RUN/SS has been pulled all the way to ground, there will
be a delay before the LTC3776 comes out of shutdown and
is given by:
tDELAY = 0.65V •
C SS
= 0.93 s/µF • C SS
0.7µA
RUN/SS
RUN/SS
D1
CSS
CSS
3776 F07
Figure 7. RUN/SS Pin Interfacing
R1B
VOUT2
LTC3776
VFB1
VFB2
R1A
VREF
3776 F08
Figure 8. Using the VREF Pin (VOUT2
is Regulated to 1/2 VREF = 1/2VOUT1)
Phase-Locked Loop and Frequency Synchronization
This pin can be driven directly from logic as shown in
Figure 7. Diode D1 in Figure 7 reduces the start delay but
allows CSS to ramp up slowly providing the soft-start
function. This diode (and capacitor) can be deleted if the
external soft-start is not needed.
3.3V OR 5V
VOUT1
The LTC3776 has a phase-locked loop (PLL) comprised
of an internal voltage-controlled oscillator (VCO) and a
phase detector. This allows the turn-on of the external
P-channel MOSFET of controller 1 to be locked to the
rising edge of an external clock signal applied to the
SYNC/SSEN pin. The turn-on of controller 2’s external
P-channel MOSFET is thus 180 degrees out of phase with
the external clock. The phase detector is an edge sensitive
digital type that provides zero degrees phase shift
between the external and internal oscillators. This type of
phase detector does not exhibit false lock to harmonics of
the external clock.
The output of the phase detector is a pair of complementary current sources that charge or discharge the external
filter network connected to the PLLLPF pin. The relationship between the voltage on the PLLLPF pin and operating
3776f
18
LTC3776
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APPLICATIO S I FOR ATIO
frequency, when there is a clock signal applied to SYNC/
SSEN, is shown in Figure 9 and specified in the Electrical
Characteristics table. Note that the LTC3776 can only be
synchronized to an external clock whose frequency is
within range of the LTC3776’s internal VCO, which is
nominally 200kHz to 1MHz. This is guaranteed, over
temperature and process variations, to be between 250kHz
and 850kHz. A simplified block diagram is shown in
Figure 10.
1400
The loop filter components, CLP and RLP, smooth out the
current pulses from the phase detector and provide a
stable input to the voltage-controlled oscillator. The filter
components CLP and RLP determine how fast the loop
acquires lock. Typically RLP = 10k and CLP is 2200pF to
0.01µF.
Typically, the external clock (on SYNC/SSEN pin) input high
threshold is 1.6V, while the input low threshold is 1.2V.
1200
1000
FREQUENCY (kHz)
oscillators are identical. At the stable operating point, the
phase detector output is high impedance and the filter
capacitor CLP holds the voltage.
Table 2 summarizes the different states in which the
PLLLPF pin can be used.
800
600
Table 2
400
PLLLPF PIN
200
0
0
0.5
1
1.5
2
PLLLPF PIN VOLTAGE (V)
2.4
3776 F09
SYNC/SSEN PIN
FREQUENCY
0V
GND
300kHz
Floating
GND
550kHz
VIN
GND
750kHz
Clock Signal
Phase-Locked to External Clock
VIN
Spread Spectrum Operation
450kHz to 550kHz
RC Loop Filter
Figure 9. Relationship Between Oscillator Frequency and Voltage
at the PLLLPF Pin When Synchronizing to an External Clock
Capacitor to
GND
2.4V
RLP
Low Supply Operation
CLP
SYNC/
SSEN
EXTERNAL
OSCILLATOR
PLLLPF
DIGITAL
PHASE/
FREQUENCY
DETECTOR
OSCILLATOR
Although the LTC3776 can function down to below 2.4V,
the maximum allowable output current is reduced as VIN
decreases below 3V. Figure 11 shows the amount of
change as the supply is reduced down to 2.4V. Also shown
is the effect on VREF.
3776 F10
Figure 10. Phase-Locked Loop Block Diagram
If the external clock frequency is greater than the internal
oscillator’s frequency, fOSC, then current is sourced continuously from the phase detector output, pulling up the
PLLLPF pin. When the external clock frequency is less
than fOSC, current is sunk continuously, pulling down the
PLLLPF pin. If the external and internal frequencies are the
same but exhibit a phase difference, the current sources
turn on for an amount of time corresponding to the phase
difference. The voltage on the PLLLPF pin is adjusted until
the phase and frequency of the internal and external
NORMALIZED VOLTAGE OR CURRENT (%)
105
100
95
VREF
MAXIMUM
SENSE VOLTAGE
90
85
80
75
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
INPUT VOLTAGE (V)
3776 F11
Figure 11. Line Regulation of VREF and
Maximum Sense Voltage for Low Input Supply
3776f
19
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Minimum On-Time Considerations
Minimum on-time, tON(MIN), is the smallest amount of time
in which the LTC3776 is capable of turning the top P-channel
MOSFET on and then off. It is determined by internal
timing delays and the gate charge required to turn on the
top MOSFET. Low duty cycle and high frequency applications may approach the minimum on-time limit and care
should be taken to ensure that:
tON(MIN) <
VOUT
fOSC • VIN
If the duty cycle falls below what can be accommodated
by the minimum on-time, the LTC3776 will regulate by
overvoltage protection. The minimum on-time for the
LTC3776 is typically about 200ns. However, as the peak
sense voltage (IL(PEAK) • RDS(ON)) decreases, the minimum on-time gradually increases up to about 250ns.
Efficiency Considerations
The efficiency of a switching regulator is equal to the
output power divided by the input power times 100%. It is
often useful to analyze individual losses to determine what
is limiting efficiency and which change would produce the
most improvement. Efficiency can be expressed as:
Efficiency = 100% – (L1 + L2 + L3 + …)
where L1, L2, etc. are the individual losses as a percentage
of input power.
Although all dissipative elements in the circuit produce
losses, five main sources usually account for most of the
losses in LTC3776 circuits: 1) LTC3776 DC bias current,
2) MOSFET gate charge current, 3) I2R losses, and
4) transition losses.
1) The VIN (pin) current is the DC supply current, given in
the electrical characteristics, excluding MOSFET driver
currents. VIN current results in a small loss that increases with VIN.
2) MOSFET gate charge current results from switching the
gate capacitance of the power MOSFETs. Each time a
MOSFET gate is switched from low to high to low again,
a packet of charge dQ moves from SENSE+ to ground.
The resulting dQ/dt is a current out of SENSE+, which is
typically much larger than the DC supply current. In
continuous mode, IGATECHG = f • QP.
3) I2R losses are calculated from the DC resistances of the
MOSFETs and inductor. In continuous mode, the average output current flows through L but is “chopped”
between the top P-channel MOSFET and the bottom
N-channel MOSFET. The MOSFET RDS(ON)s multiplied
by duty cycle can be summed with the resistance of L
to obtain I2R losses.
4) Transition losses apply to the top external P-channel
MOSFET and increase with higher operating frequencies and input voltages. Transition losses can be estimated from:
Transition Loss = 2 (VIN)2IO(MAX)CRSS(f)
Other losses, including CIN and COUT ESR dissipative
losses and inductor core losses, generally account for less
than 2% total additional loss.
Checking Transient Response
The regulator loop response can be checked by looking at
the load transient response. Switching regulators take
several cycles to respond to a step in load current. When
a load step occurs, VOUT immediately shifts by an amount
equal to (∆ILOAD)(ESR), where ESR is the effective series
resistance of COUT. ∆ILOAD also begins to charge or discharge COUT, which generates a feedback error signal. The
regulator loop then returns VOUT to its steady-state value.
During this recovery time, VOUT can be monitored for overshoot or ringing. OPTI-LOOP compensation allows the
transient response to be optimized over a wide range of
output capacitance and ESR values.
The ITH series RC-CC filter (see Functional Diagram) sets
the dominant pole-zero loop compensation. The ITH external components shown in the Typical Application on the
front page of this data sheet will provide an adequate
starting point for most applications. The values can be
modified slightly (from 0.2 to 5 times their suggested
values) to optimize transient response once the final PC
layout is done and the particular output capacitor type and
value have been determined. The output capacitors need
to be decided upon because the various types and values
3776f
20
LTC3776
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APPLICATIO S I FOR ATIO
PC Board Layout Checklist
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of the
LTC3776. These items are illustrated in the layout diagram
of Figure 12. Figure 13 depicts the current waveforms
present in the various branches of the 2-phase dual
regulator.
1) The power loop (input capacitor, MOSFETs, inductor,
output capacitor) of each channel should be as small as
possible and isolated as much as possible from the power
loop of the other channel. Ideally, the drains of the P- and
N-channel FETs should be connected close to one another
with an input capacitor placed across the FET sources
(from the P-channel source to the N-channel source) right
at the FETs. It is better to have two separate, smaller valued
input capacitors (e.g., two 10µF—one for each channel)
than it is to have a single larger valued capacitor (e.g.,
22µF) that the channels share with a common connection.
2) The signal and power grounds should be kept separate.
The signal ground consists of the feedback resistor
dividers, ITH compensation networks and the SGND pin.
The PGND pins on the LTC3776 IC should be shorted
together and connected to the common power ground
connection (away from the switching currents).
3) Put the feedback resistors close to the VFB pins. The
trace connecting the top feedback resistor (RB) to the
output capacitor should be a Kelvin trace. The ITH compensation components should also be very close to the
LTC3776.
4) The current sense traces (SENSE+ and SW) should be
Kelvin connections right at the P-channel MOSFET source
and drain.
5) Keep the switch nodes (SW1, SW2) and the gate driver
nodes (TG1, TG2, BG1, BG2) away from the small-signal
components, especially the opposite channels feedback
resistors, ITH compensation components and the current
sense pins (SENSE+ and SW).
COUT1
2
3
4
5
6
7
8
9
10
11
12
SENSE1+
SW1
PGND
IPRG1
VFB1
BG1
ITH1
SYNC/SSEN
IPRG2
PLLLPF
SGND
VIN
TG1
PGND
TG2
RUN/SS
VREF
BG2
VFB2
PGND
ITH2
SENSE2+
PGOOD
SW2
VOUT1
L1
LTC3776EGN
1
24
23
22
MN1
CVIN1
21
MP1
20
CVIN
19
VIN
18
CVIN2
17
16
MN2
MP2
15
14
13
L2
+
A second, more severe transient is caused by switching in
loads with large (>1µF) supply bypass capacitors. The
discharged bypass capacitors are effectively put in parallel
with COUT, causing a rapid drop in VOUT. No regulator can
deliver enough current to prevent this problem if the load
switch resistance is low and it is driven quickly. The only
solution is to limit the rise time of the switch drive so that
the load rise time is limited to approximately (25)(CLOAD).
Thus a 10µF capacitor would require a 250µs rise time,
limiting the charging current to about 200mA.
The power grounds consist of the (–) terminal of the input
and output capacitors and the source of the N-channel
MOSFET. Each channel should have its own power ground
for its power loop (as described in (1) above). The power
grounds for the two channels should connect together at
a common point. It is most important to keep the ground
paths with high switching currents away from each other.
+
determine the loop feedback factor gain and phase. An
output current pulse of 20% to 100% of full load current
having a rise time of 1µs to 10µs will produce output
voltage and ITH pin waveforms that will give a sense of the
overall loop stability. The gain of the loop will be increased
by increasing RC, and the bandwidth of the loop will be
increased by decreasing CC. The output voltage settling
behavior is related to the stability of the closed-loop
system and will demonstrate the actual overall supply
performance. For a detailed explanation of optimizing the
compensation components, including a review of control
loop theory, refer to Application Note 76.
COUT2
VOUT2
3776 F12
BOLD LINES INDICATE HIGH CURRENT PATHS
Figure 12. LTC3776 Layout Diagram
3776f
21
LTC3776
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APPLICATIO S I FOR ATIO
MP1
L1
VOUT1
COUT1
MN1
+
RL1
VIN
RIN
CIN
+
MP2
BOLD LINES INDICATE
HIGH, SWITCHING
CURRENT LINES.
KEEP LINES TO A
MINIMUM LENGTH
L2
MN2
VOUT2
COUT2
+
RL2
3776 F13
Figure 13. Branch Current Waveforms
3776f
22
LTC3776
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TYPICAL APPLICATIO S
RFB1A
59k
RFB1B
187k
CITH1A
100pF
VIN
5V
CIN
10µF
×2
22
23
24
1
2
3
4
SW1
SENSE1
PGND
IPRG1
BG1
VFB1
ITH1 SYNC/SSEN
TG1
IPRG2
PGND
PLLLPF
SGND
TG2
LTC3776EUF
5
VIN
RUN/SS
RITH1
CITH1 22k
1000pF
RVIN 10Ω
CITH2
CVIN 2.2nF
1µF
RITH2
6.2k
CSS
10nF CITH2B
330pF
+ 21
L1
1.5µH
MP1
20
19
18
17
16
15
MN1
Si7540DP
VDDQ
2.5V
5A
COUT1
100µF
14
13
BG2
9
12
PGND
PGOOD
7
11
SENSE2+
VFB2
8
ITH2
10
6
SW2
VREF
PGND
COUT2
100µF
MN2
Si7540DP
MP2
L2
1.5µH
VTT
1.25V
±5A
25
3776 F14
Figure 14. 2-Phase, 550kHz, DDR Memory Supplies
3776f
23
LTC3776
U
TYPICAL APPLICATIO S
RFB1A
59k
RFB1B
187k
CITH1A
100pF
VIN
3.3V
22
23
24
1
2
3
4
SW1
PGND
IPRG1
BG1
VFB1
ITH1 SYNC/SSEN
TG1
IPRG2
PGND
PLLLPF
SGND
TG2
LTC3776EUF
5
VIN
RUN/SS
RITH1
CITH1 22k
1000pF
RVIN 10Ω
CIN
22µF
CITH2
CVIN 2.2nF
1µF
RITH2
6.2k
CSS
10nF CITH2A
330pF
21
SENSE1+
L1
2.2µH
MP1
FDC638P
20
19
18
17
16
15
MN1
FDC637N
VDDQ
2.5V
2A
COUT1
47µF
14
13
BG2
9
12
PGND
PGOOD
7
11
SENSE2+
VFB2
8
ITH2
10
6
VREF
SW2
PGND
COUT2
47µF
MN2
FDC637N
MP2
FDC638P
L2
2.2µH
VTT
1.25V
±2A
25
3776 F15
L1, L2: VISHAY IHLP-2525CZ-01
Figure 15. 2-Phase, 750kHz, DDR Memory Supplies with Ceramic Output Capacitors
3776f
24
LTC3776
U
TYPICAL APPLICATIO S
CFF1
100pF
CITH1
220pF
CLP
10nF
VIN
3.3V
RFB1B
187k
RITH1
15k
RLP
15k
RVIN 10Ω
CIN
22µF
CITH2
CVIN 220pF
1µF
RITH2
15k
CLK IN
1
2
3
4
5
6
7
+ 24
SW1
SENSE1
IPRG1
PGND
BG1
VFB1
ITH1 SYNC/SSEN
TG1
IPRG2
PGND
PLLLPF
TG2
SGND
LTC3776EGN
5
VIN
RUN/SS
MP1
23
22
21
20
19
18
SW1
L1
1.5µH
MN1
Si7540DP
D1
MN2
Si7540DP
D2
VDDQ
2.5V
4A
+
COUT1
150µF
17
16
BG2
12
15
PGND
PGOOD
10
14
SENSE2+
VFB2
11
ITH2
13
9
VREF
SW2
MP2
SW2
+
RFB1A
59k
L2
1.5µH
COUT2
150µF V
TT
1.25V
±4A
3736 F16
COUT1, COUT2: SANYO 4TPB150MC
D1, D2: OPTIONAL SCHOTTKY DIODES
L1, L2: VISHAY IHLP-2525CZ-01
Figure 16. 2-Phase, Synchronizable, DDR Memory Supplies
3776f
25
LTC3776
U
PACKAGE DESCRIPTIO
UF Package
24-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1697)
0.70 ±0.05
4.50 ± 0.05
2.45 ± 0.05
3.10 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.25 ±0.05
0.50 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
4.00 ± 0.10
(4 SIDES)
BOTTOM VIEW—EXPOSED PAD
R = 0.115
TYP
0.75 ± 0.05
PIN 1 NOTCH
R = 0.20 TYP OR
0.35 × 45° CHAMFER
23 24
PIN 1
TOP MARK
(NOTE 6)
0.40 ± 0.10
1
2
2.45 ± 0.10
(4-SIDES)
(UF24) QFN 0105
0.200 REF
0.00 – 0.05
0.25 ± 0.05
0.50 BSC
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGD-X)—TO BE APPROVED
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE, IF PRESENT
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
3776f
26
LTC3776
U
PACKAGE DESCRIPTIO
GN Package
24-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.337 – .344*
(8.560 – 8.738)
24 23 22 21 20 19 18 17 16 15 1413
.033
(0.838)
REF
.045 ±.005
.229 – .244
(5.817 – 6.198)
.254 MIN
.150 – .157**
(3.810 – 3.988)
.150 – .165
1
.0165 ± .0015
2 3
4
5 6
7
8
9 10 11 12
.0250 BSC
RECOMMENDED SOLDER PAD LAYOUT
.015 ± .004
× 45°
(0.38 ± 0.10)
.0075 – .0098
(0.19 – 0.25)
.0532 – .0688
(1.35 – 1.75)
.004 – .0098
(0.102 – 0.249)
0° – 8° TYP
.016 – .050
(0.406 – 1.270)
NOTE:
1. CONTROLLING DIMENSION: INCHES
INCHES
2. DIMENSIONS ARE IN
(MILLIMETERS)
.008 – .012
(0.203 – 0.305)
TYP
.0250
(0.635)
BSC
GN24 (SSOP) 0204
3. DRAWING NOT TO SCALE
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
3776f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
27
LTC3776
U
TYPICAL APPLICATIO
2-Phase, Spread Spectrum, DDR Memory Supplies with Ceramic Output Capacitors
RFB1A
59k
RFB1B
187k
CITH1A
100pF
CITH1
1000pF
RITH1
22k
2200pF
VIN
3.3V
RVIN 10Ω
CIN
22µF
CITH2
CVIN 2.2nF
1µF
RITH2
6.2k
22
23
24
1
2
3
4
21
SENSE1+
SW1
PGND
IPRG1
BG1
VFB1
ITH1 SYNC/SSEN
TG1
IPRG2
PGND
PLLLPF
SGND
TG2
LTC3776EUF
5
VIN
RUN/SS
20
19
18
17
16
15
MN1
FDC637N
VDDQ
2.5V
2A
COUT1
47µF
14
13
BG2
9
12
PGND
PGOOD
7
11
SENSE2+
VFB2
8
ITH2
10
6
VREF
SW2
PGND
CSS
10nF CITH2A
330pF
L1
2.2µH
MP1
FDC638P
COUT2
47µF
MN2
FDC637N
MP2
FDC638P
L2
2.2µH
VTT
1.25V
±2A
25
3776 TA02
L1, L2: VISHAY IHLP-2525CZ-01
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ISD = <1µA, MS Package
LTC3412
2.5A (IOUT), 4MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, VIN: 2.5V to 5.5V, VOUT = 0.8V, IQ = 60µA,
ISD = <1µA, TSSOP-16E Package
LTC3413
3A Monolithic DDR Memory Termination Regulator
±3A Output Current, 2.25V ≤ VIN ≤ 5.5V
LTC3701
2-Phase, Low Input Voltage Dual Step-Down DC/DC Controller 2.5V ≤ VIN ≤ 9.8V, 550kHz, PGOOD, PLL, 16-Lead SSOP
LTC3708
Fast 2-Phase, No RSENSE Buck Controller with
Constant On-Time Dual Controller, VIN Up to 36V, Very Low
Output Tracking
Duty Cycle Operation, 5mm × 5mm QFN Package
LTC3717
High Power DDR Memory Termination Regulator
4V ≤ VIN ≤ 36V, VOUT Tracks VIN or VREF, IOUT from 1A to 20A
LTC3728/LTC3728L Dual, 550kHz, 2-Phase Synchronous Step-Down
Constant Frequency, VIN to 36V, 5V and 3.3V LDOs,
Switching Regulator
5mm × 5mm QFN or 28-Lead SSOP
LTC3736
Dual, 2-Phase, No RSENSE, Synchronous Controller
VIN: 2.75 to 9.8V, IOUT up to 5A, 4mm x 4mm QFN Package
with Output Tracking
LTC3736-1
Dual, 2-Phase, No RSENSE, Synchronous Controller
VIN: 2.75 to 9.8V, Spread Spectrum Operation, Output Voltage
with Spread Spectrum
Tracking, 4mm x 4mm QFN Package
LTC3737
Dual, 2-Phase, No RSENSE, Controller
VIN: 2.75 to 9.8V, IOUT up to 5A, 4mm x 4mm QFN Package
with Output Tracking
LTC3831
High Power DDR Memory Termination Regulator
VOUT Tracks 1/2 VIN or VREF, 3V ≤ VIN ≤ 8V, IOUT from 1A to 20A
No RSENSE is a trademark of Linear Technology Corporation.
3776f
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Linear Technology Corporation
LT/TP 0205 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
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www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2005