RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Features General Description ■ ■ ■ ■ ■ ■ ■ The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50Ω minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. 30 dB small signal gain 30 dBm output power @ 1 dB compression 3% EVM at 22 dBm modulated power out 5.0 V positive collector supply operation Two power saving shutdown options (bias and logic control) Integrated power detector with 20 dB dynamic range RoHS compliant low profile 16 pin 3 x 3 x 0.9 mm leadless package ■ Internally matched to 50Ω and DC blocked RF input/output ■ Optimized for use in 802.11b/g Access Point applications Device Electrical Characteristics1 802.11g OFDM Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Min Typ Max Units 2.5 GHz Frequency 2.4 Collector Supply Voltage 4.5 5.0 5.5 V Mirror Supply Voltage 2.8 3.3 3.6 V Gain 30 dB Total Current @ 22dBm POUT 195 mA EVM @ 22dBm POUT2 3.0 % Detector Output @ 22dBm POUT 960 mV 4 dBm Detector Threshold3 Notes: 1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, TA = 25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. ©2005 Fairchild Semiconductor Corporation RMPA2455 Rev. F 1 www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier September 2005 Parameter Min Typ Max Units Frequency 2.4 2.5 GHz Collector Supply Voltage 4.5 5.0 5.5 V Mirror Supply Voltage 2.8 3.3 3.6 V Gain 30 dB Total Quiescent Current 140 mA Bias Current at pin VM122 17 mA P1dB Compression 30 dBm Standby Current3 0.7 mA Shutdown Current (VM12 = 0V) <1.0 µA Input Return Loss 12 dB Output Return Loss 10 dB Detector Output at P1dB Comp 4 V Detector POUT Threshold7 6 dBm 2nd Harmonic Output at P1dB -40 dBc 3rd Harmonic Output at P1dB -40 dBc 2.4 V Logic Shutdown Control (VL): Device Off, Logic High Input 2.0 Device On, Logic Low Input 0.0 Logic Current 150 0.8 V µA Turn-on Time4 <1 µS Turn-off Time <1 µS -65 dBc Spurious (Stability)5 Absolute Ratings6 Symbol Parameter Ratings Units VC1, VC2 Positive Supply Voltage 6 V IC1, IC2 Supply Current IC1 IC2 120 700 mA mA VM12 Positive Bias Voltage 4.0 V VL Logic Voltage 5 V PIN RF Input Power 10 dBm TCASE Case Operating Temperature -40 to +85 °C TSTG Storage Temperature -55 to +150 °C Notes: 1. VC1,VC2 = 5.0V, VM12 = 3.3V, TC = 25°C, 50Ω system. 2. Mirror bias current is included in the total quiescent current. 3. VL is set to Input Logic Level High for PA Off operation. 4. Measured from Device On signal turn on (Logic Low) to the point where RF POUT stabilizes to 0.5dB. 5. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 6. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values 7. POUT measured at PIN corresponding to power detection threshold. 2 RMPA2455 Rev. F www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Electrical Characteristics1 Single Tone VL VM12 N/C VDET VC2 16 15 14 13 VOLTAGE DETECTOR 1 12 N/C BIAS RF IN 2 11 INPUT MATCH 10 4 5 6 7 8 N/C N/C 9 N/C N/C 3 VC1 RF IN RF OUT N/C Backside Ground 3 RMPA2455 Rev. F RF OUT OUTPUT MATCH INT STG MATCH Pin Description 1 VL (logic) 2 RF IN 3 RF IN 4 N/C 5 VC1 6 N/C 7 N/C 8 N/C 9 N/C 10 RF OUT 11 RF OUT 12 N/C 13 VC2 14 VDET 15 N/C 16 VM12 www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Functional Block Diagram Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Total Current Vs. Modulated Output Power VC1, VC2 = 5.0V, VM12 = 3.3V 6 220 5 200 Total Current (mA) Total Measured EVM (%) Total Measured EVM Vs. Modulated Output Power VC1, VC2 = 5.0V, VM12 = 3.3V 4 2.4 GHz 2.45 GHz 3 2.5 GHz 2 180 160 140 2.4 GHz 2.45 GHz 120 1 Includes 0.8% System Level EVM 0 0 2 4 6 8 10 12 14 16 18 20 22 2.5 GHz 100 0 24 2 4 6 8 10 12 14 16 18 20 22 24 Modulated Output Power Modulated Output Power (dBm) Gain Vs. Modulated Output Power VC1, VC2=5.0V, VM12=3.3V T=25C Detector Voltage Vs. Modulated Output Power VC1, VC2 =5.0V, VM12=3.3V T=25C 31 3000 30 2500 Detector Voltage (mV) 29 Gain (dB) 28 27 26 2.4 GHz 25 2.45 GHz 24 2.5 GHz 2000 2.4 GHz 2.45 GHz 1500 2.5 GHz 1000 500 23 0 22 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Modulated Output Power (dBm) Modulated Output Pow er (dBm ) Total Measured EVM Vs. Modulated Output Power VC1, VC2 = 4.5, 5.0 and 5.5V, VM12 = 3.3V F=2.45 GHz Typical EVM Vs. Modulated Power Out VC1, VC2=5.0V, VM12 =2.8 to 3.3V F=2.45 GHz T=25C 6 5 VM=2.8V 4.5 V Total Measured EVM (%) Total Measured EVM (%) 5 5.0 V 4 5.5 V 3 2 1 4 VM=2.9V VM=3.0V VM=3.1V 3 VM=3.2V VM=3.3V 2 1 Includes 0.8% System Level EVM 0.8% System Level EVM Included 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 24 4 RMPA2455 Rev. F 2 4 6 8 10 12 14 16 18 20 22 24 Modulated Output Power (dBm) Modulated Output Power (dBm) www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Performance Data 802.11g OFDM RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Performance Data 802.11g OFDM Modulation (with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Total Bias Current Vs. Modulated Output Power VC1, VC2=5.0V, VM12 =2.8 to 3.3V F=2.45 GHz T=25C Modulated Gain and Total Quiescient Current Vs. Mirror Voltage (VM) 300 30 160 VM=2.9V 29 140 Gain VM=3.0V VM=3.1V 200 28 Modulated Gain (dB) Total Bias Current (mA) 250 VM=3.2V VM=3.3V 150 100 120 100 27 Current 50 26 80 25 60 24 40 23 0 0 2 4 6 8 20 2.8 10 12 14 16 18 20 22 24 26 28 30 Total Quiescent Current (mA) VM=2.8V 2.9 3 3.1 3.2 3.3 Mirror Voltage (Volts) Modulated Output Power (dBm) Single Tone S-Parameters VC=5.0V VM12=3.3V T=25C Gain Vs. Single Tone Output Power VC1, VC2 = 5.0V, VM12 = 3.3V 40 33 32 S21 30 31 20 29 Sij (dB) Gain (dB) 30 28 27 10 0 S22 26 2.4 GHz 25 2.45 GHz -10 2.5 GHz 24 -20 S11 23 -30 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 2 Single Tone Output Power (dBm) 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency (GHz) 5 RMPA2455 Rev. F 2.1 www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Evaluation Board Schematic Backside Ground Package Outline Dimensions in inches [mm] 2455 YWWX Front Side View See Detail A Detail A Bottom View as Viewed from Bottom Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side. 6 RMPA2455 Rev. F www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Evaluation Board of Materials Evaluation Board Layout C6 C3 R1 L1 C4 C2 L2 C1 C5 C7 Actual Board Size = 2.0" X 1.5" 7 RMPA2455 Rev. F www.fairchildsemi.com 7) Apply input RF power to SMA connector pin RFIN. Currents in pins VC1 and VC2 will vary depending on the input drive level. Recommended turn-on sequence: 8) Vary positive voltage VL on pin VREG from +0.5V to +2.4V to shut down the amplifier or alter the power level. Shut down current flow into the pins: 1) Connect common ground terminal to the Ground (GND) pin on the board. 2) Apply low voltage 0.0 to +1.0 V to pin VL. 3) Apply positive supply voltage VC1 (= 5.0V) to pin VC1 (first stage collector). Pin Current VM12 <0.7 mA 4) Apply positive supply voltage VC2 (= 5.0V) to pin VC2 (second stage collector). VC1 <1 nA VC2 <1 nA 5) Apply positive bias voltage VM12 (= 3.3V) to pin VM12 (bias networks). VL <0.25 mA 6) At this point, you should expect to observe the following positive currents flowing into the pins: Recommended turn-off sequence: Use reverse order described in the turn-on sequence above. Pin Current VM12 15.0 – 20.0 mA VC1 45.0 – 65.0 mA VC2 60.0 – 80.0 mA VL <1 nA Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. 8 RMPA2455 Rev. F www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Evaluation Board Turn-On Sequence1 CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Device Usage: Fairchild recommends the following procedures prior to assembly. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • Assemble the devices within one year of removal from the dry pack. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15°C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. • During the one year period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the one year period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125°C for 24 hours minimum, must be performed. Recommended Solder Reflow Profile Peak tem p 260 +0/-5 °C 10 - 20 sec 260 Temperature (°C) Ramp-Up R ate 3 °C/sec max 217 200 Time above li quidus temp 60 - 150 sec 150 Preheat, 150 to 200 °C 60 - 180 sec 100 Ramp-Up R ate 3 °C/sec max Ramp-Do wn Rate 6 °C/sec max 50 25 Time 25 °C/sec t o peak tem p 6 mi nutes max Time (Sec) 9 RMPA2455 Rev. F www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Applications Information The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 10 RMPA2455 Rev. F www.fairchildsemi.com RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier TRADEMARKS