DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 PMLL4150; PMLL4151; PMLL4153 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 50 V • Repetitive peak reverse voltage: max. 75 V k handbook, 4 columns • Repetitive peak forward current: max. 600 mA and 450 mA respectively. a MAM061 APPLICATIONS • High-speed switching • The PMLL4150 is primarily intended for general purpose use in computer and industrial applications. Cathode indicated by black band. Fig.1 Simplified outline (SOD80C) and symbol. • The PMLL4151 and PMLL4153 are intended for military and industrial applications. 1996 Sep 18 2 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER MIN. MAX. PMLL4151 − 75 V PMLL4153 − 75 V − 50 V PMLL4150 − 300 mA PMLL4151 − 200 mA PMLL4153 − 200 mA PMLL4150 − 600 mA PMLL4151 − 450 mA PMLL4153 − 450 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A continuous reverse voltage IF continuous forward current IFSM UNIT repetitive peak reverse voltage VR IFRM CONDITIONS see Fig.2; note 1 repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 500 Tstg storage temperature Tamb = 25 °C; note 1 −65 +200 °C Tj junction temperature − 200 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 3 mW Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage PMLL4150 IR IR CONDITIONS UNIT IF = 1 mA 540 620 mV IF = 10 mA 660 740 mV IF = 50 mA 760 860 mV IF = 100 mA 820 920 mV IF = 200 mA 870 1000 mV PMLL4151 IF = 50 mA − 1000 mV PMLL4153 IF = 0.1 mA 490 550 mV IF = 0.25 mA 530 590 mV IF = 1 mA 590 670 mV IF = 2 mA 620 700 mV IF = 10 mA 700 810 mV IF = 50 mA 740 880 mV reverse current VR = 50 V; see Fig.5 PMLL4150 − 0.1 PMLL4151 − 0.05 µA PMLL4153 − 0.05 µA reverse current µA VR = 50 V; Tj = 150 °C; see Fig.5 PMLL4150 − 100 µA PMLL4151 − 50 µA − 50 µA diode capacitance f = 1 MHz; VR = 0; see Fig.6 PMLL4150 − 2.5 pF PMLL4151 − 2 pF 2 pF PMLL4153 1996 Sep 18 MAX. see Fig.3 PMLL4153 Cd MIN. 4 Philips Semiconductors Product specification High-speed diodes SYMBOL trr PARAMETER reverse recovery time PMLL4150 trr PMLL4150; PMLL4151; PMLL4153 reverse recovery time PMLL4151 CONDITIONS MIN. MAX. − 6 ns when switched from IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 Ω; measured at IR = 0.1 × IF; see Fig.7 − 4 ns when switched from IF = 200 mA to 400 mA to IR = 200 mA to 400 mA; RL = 100 Ω; measured at IR = 0.1 × IF; see Fig.7 − 6 ns − 4 ns − 2 ns − 4 ns when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 2 ns when switched to IF = 200 mA; tr = 0.4 ns; measured at VF = 1 V; see Fig.8 − 10 ns when switched from IF = 10 mA to IR = 1 mA; RL = 100 Ω; measured at IR = 0.1 mA; see Fig.7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 trr reverse recovery time PMLL4153 tfr forward recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 5 VALUE UNIT 300 K/W 350 K/W Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 GRAPHICAL DATA MBG456 400 handbook, halfpage MBG464 600 IF (mA) handbook, halfpage IF (mA) 300 (1) 400 200 (1) (2) (3) (2) 200 100 0 0 100 Tamb (oC) 200 0 0 Device mounted on an FR4 printed-circuit board. (1) PMLL4150. (2) PMLL4151; PMLL4153. Fig.0 1 VF (V) 2 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 6 104 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 MGD004 MGD006 103 handbook, halfpage 1.2 handbook, halfpage IR (µA) 10 Cd (pF) 2 1.0 (1) (2) (3) 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 18 7 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) The value of IR is dependent on product type. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 1.0 90% R = 50 Ω S D.U.T. VF (V) OSCILLOSCOPE Vfr R i = 50 Ω 10% MBH181 t tr tp input signal Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor δ = 0.01. Fig.8 Forward recovery time test circuit and waveforms. 1996 Sep 18 8 tfr output signal t Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 3.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 18 9