Transistors 2SB0643, 2SB0644 (2SB643, 2SB644) Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 Symbol Rating Unit VCBO −30 V (0.85) −60 2SB0644 Collector-emitter voltage 2SB0643 (Base open) 2SB0644 VCEO Emitter-base voltage (Collector open) VEBO 0.45±0.05 0.55±0.1 −25 1.25±0.05 Collector-base voltage (Emitter open) 2SB0643 1.0±0.1 Parameter 2.4±0.2 ■ Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) 6.9±0.1 ■ Features V −50 −7 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 2 (2.5) 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max IC = −10 µA, IE = 0 VCEO IC = −2 mA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-Emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 −1 µA 340 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0643 Collector-emitter saturation voltage Transition frequency VCE = −10 V, IC = −10 mA 85 VCE = −10 V, IC = −500 mA 40 VCE(sat) IC = −300 mA, IB = −30 mA *2 VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) V −7 hFE2 hFE1 *1 −25 −50 2SB0644 Forward current transfer ratio V −60 2SB0644 *1 −30 Unit VCBO 2SB0643 VCB = −10 V, IE = 0, f = 1 MHz Cob V 90 − 0.35 − 0.6 200 6 V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00046CED 1 2SB0643, 2SB0644 IC VCE 700 −700 600 −600 −2 mA −1 mA 20 40 60 0 80 100 120 140 160 −4 0 25°C −25°C −10 25°C −1 Ta = −25°C − 0.1 −1 VCB = −10 V Ta = 25°C 200 160 120 80 40 10 Emitter current IE (mA) 100 24 −10 500 400 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 −10 − 0.1 −1 −10 Collector current IC (A) ICEO Ta 104 IE = 0 f = 1 MHz Ta = 25°C 20 −8 VCE = −10 V Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob fT I E −6 hFE IC 75°C − 0.01 − 0.01 −4 600 Collector current IC (A) 240 Transition frequency fT (MHz) −2 0 Base current IB (mA) IC / IB = 10 − 0.1 −1 0 −20 −10 Collector current IC (A) 1 −16 VCE = −10 V 103 16 ICEO (Ta) ICEO (Ta = 25°C) − 0.1 −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 75°C − 0.01 − 0.01 −12 VBE(sat) IC −10 − 0.1 −8 Collector-emitter voltage VCE (V) IC / IB = 10 −1 −200 −100 VCE(sat) IC −100 −300 Forward current transfer ratio hFE 0 Ambient temperature Ta (°C) 2 −400 −100 100 0 −500 −3 mA −200 200 −600 −4 mA −300 300 VCE = −10 V Ta = 25°C −700 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −400 400 0 Ta = 25°C −500 500 IC I B −800 Collector current IC (mA) −800 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 800 12 8 102 10 4 0 −1 −10 −100 Collector-base voltage VCB (V) SJC00046CED 1 0 40 80 120 160 Ambient temperature Ta (°C) 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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