DT3055 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B D C D D G E S P G R H J K L S N M Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above Maximum Ratings Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 2.35 E 2.22 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage - Continuous VGSS ±20 V Note 1a Continuous Pulsed ID ±4 ±25 A Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Tj, TSTG -65 to +150 °C Symbol Value Unit RQJA 42 °C/W RQJC 12 °C/W Drain Current Maximum Power Dissipation Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Notes: Note 1 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W. DS11604 Rev. C-4 1 of 4 DT3055 Electrical Characteristics 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj =125°C IDSS — — — — 10 100 µA VDS = 48V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V Tj = 100°C VGS(th) 2.0 1.5 2.9 2.3 4.0 3.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — — 0.075 0.13 0.10 0.22 W VGS = 10V, ID = 4.0A ID(ON) 15 — — A VGS = 10V. VDS = 10V gFS — 3.5 — m VDS = 15V, ID = 4.0A Input Capacitance CISS — 350 — pF Output Capacitance COSS — 135 — pF Reverse Transfer Capacitance CRSS — 40 — pF OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS VDS = 30V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 18 25 ns Turn-On Rise Time tr — 25 50 ns Turn-Off Delay Time tD(OFF) — 43 65 ns Turn-Off Fall Time tf — 34 60 ns Total Gate Charge Qg — 10 15 nC Gate-Source Charge Qgs — 2.0 4.0 nC Gate-Drain Charge Qgd — 6.0 10 nC 2.5 A 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS — — Forward Current Source-Drain Diode Forward Voltage Notes: VSD — — VDD = 25V, ID = 1.2A VGS = 10V, RGEN = 50W VDS = 40V. ID = 4.0A. VGS = 10V VGS = 0V, IS = 4.0A (Note 2) 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. DS11604 Rev. C-4 2 of 4 DT3055 VGS = 10V 8.0 ID, DRAIN-SOURCE CURRENT 7.0 12 9 6.0 6 5.5 5.0 3 4.5 0 0 1 2 3 4 2.0 1.8 3.0 VGS = 5.0V 5.5 6.0 2.5 7.0 2.0 1.5 8.0 10 1.0 0.5 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Current 10 VDS = 10V ID = 4A VGS = 10V TJ = -55 C 125 C 8 25 C 1.6 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 1.4 1.2 1.0 0.8 6 4 2 0.6 0.4 -50 -25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance Variation vs Temperature DS11604 Rev. C-4 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, On-Resistance vs Gate Voltage & Temperature 3 of 4 DT3055 40 10 0 ID, DRAIN CURRENT (A) 10 s IT M N) LI O S( RD 10 0m 1s s 10 1 s dc -.1 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.05 0.02 P(pk) 0.01 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design. DS11604 Rev. C-4 4 of 4 DT3055