BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp (MHz) (W) (W) D IMD3 IMDshldr PAR (dBc) (dB) 32 - - - 31[1] 8.2 [2] (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.1 858 150 70 - 21 21 46 33 RF performance in a common source 470 MHz to 860 MHz broadband test circuit DVB-T (8k OFDM) 858 70 - 20 32 - 32 [1] 8.0 [2] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF884P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 3 5 [1] source 3 5 4 4 2 sym117 BLF884PS (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 5 [1] 3 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF884P - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A BLF884PS - earless flanged LDMOST ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF884P_BLF884PS Product data sheet Symbol Parameter VDS VGS Conditions Min Max Unit drain-source voltage - 104 V gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] Conditions Typ thermal resistance from junction to case Tcase = 80 C; PL(AV) = 70 W [1] Unit 0.22 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage Min Typ Max Unit VGS = 0 V; ID = 1.2 mA [1] 104 - - V [1] 1.4 1.9 2.4 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 120 mA IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 19 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA - 240 - m - 105 - pF RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 4.25 A [1] Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz [2] Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 34 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 0.7 - pF [1] ID is the drain current. [2] Capacitance values without internal matching. Table 7. RF characteristics RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 2-Tone, class-AB VDS BLF884P_BLF884PS Product data sheet drain-source voltage [1] - 50 - - 0.65 - V IDq quiescent drain current PL(AV) average output power f1 = 860 MHz; f2 = 860.1 MHz 150 - - W Gp power gain f1 = 860 MHz; f2 = 860.1 MHz 20 21 - dB D drain efficiency f1 = 860 MHz; f2 = 860.1 MHz 42 46 - % IMD3 third-order intermodulation distortion f1 = 860 MHz; f2 = 860.1 MHz - 32 28 All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 A dBc © NXP B.V. 2011. All rights reserved. 3 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor Table 7. RF characteristics …continued RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit DVB-T (8k OFDM), class-AB VDS drain-source voltage IDq quiescent drain current PL(AV) average output power Gp power gain D drain efficiency f = 858 MHz IMDshldr intermodulation distortion shoulder f = 858 MHz [2] f = 858 MHz [3] PAR - 50 - V - 0.65 - A f = 858 MHz 70 - - W f = 858 MHz 20 21 - dB 30 33 - % - 31 27 dBc - 8.2 dB [1] peak-to-average ratio - [1] Idq for total device [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 001aao028 200 Coss (pF) 150 100 50 0 0 20 40 VDS (V) 60 VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF884P and BLF884PS are capable of withstanding a load mismatch corresponding to VSWR of 40 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 7. Application information 7.1 Broadband RF figures 7.1.1 DVB-T 001aao029 24 Gp (dB) Gp -10 IMDshldr (dBc) 50 ηD (%) PAR (dB) -20 20 001aao030 9.5 40 8.5 PAR IMDshldr 16 -30 30 7.5 ηD -40 12 8 400 500 600 700 5.5 400 -50 800 900 f (MHz) DVB-T power gain and intermodulation distortion shoulder as function of frequency; typical values BLF884P_BLF884PS Product data sheet 500 600 700 10 800 900 f (MHz) PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a common source broadband test circuit as described in Section 8. Fig 2. 20 6.5 Fig 3. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 7.2 Impedance information drain 1 gate 1 Zi ZL gate 2 drain 2 001aan207 Fig 4. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 70 W (DVB-T). f BLF884P_BLF884PS Product data sheet Zi ZL MHz 300 0.984 j3.485 8.315 + j1.246 325 1.009 j2.805 8.236 + j1.328 350 1.038 j2.185 8.153 + j1.406 375 1.071 j1.614 8.066 + j1.479 400 1.107 j1.080 7.975 + j1.547 425 1.147 j0.574 7.880 + j1.610 450 1.193 j0.092 7.782 + j1.667 475 1.243 + j0.373 7.682 + j1.720 500 1.300 + j0.826 7.579 + j1.767 525 1.364 + j1.270 7.474 + j1.809 550 1.436 + j1.708 7.367 + j1.846 575 1.517 + j2.144 7.258 + j1.877 600 1.609 + j2.581 7.149 + j1.903 625 1.714 + j3.022 7.038 + j1.925 650 1.834 + j3.469 6.927 + j1.941 675 1.971 + j3.925 6.815 + j1.952 700 2.129 + j4.394 6.703 + j1.958 725 2.313 + j4.879 6.591 + j1.960 750 2.528 + j5.382 6.480 + j1.956 775 2.781 + j5.907 6.368 + j1.949 800 3.081 + j6.458 6.258 + j1.937 825 3.441 + j7.038 6.148 + j1.921 850 3.875 + j7.648 6.040 + j1.901 875 4.404 + j8.291 5.932 + j1.877 900 5.057 + j8.964 5.825 + j1.849 925 5.870 + j9.659 5.720 + j1.818 950 6.892 + j10.358 5.616 + j1.783 975 8.186 + j11.019 5.514 + j1.745 1000 9.829 + j11.566 5.413 + j1.704 All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 5 and Figure 6. Component Description Value B1, B2 semi rigid coax 25 ; 49.5 mm Remarks UT-090C-25 (EZ 90-25) C1, C2 multilayer ceramic chip capacitor 5.1 pF [1] C3 multilayer ceramic chip capacitor 6.8 pF [1] C4 multilayer ceramic chip capacitor 8.2 pF [1] C10, C13, C14 multilayer ceramic chip capacitor 100 pF [2] C11, C12 multilayer ceramic chip capacitor 10 pF [1] C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V C17, C18, C23, C24 multilayer ceramic chip capacitor 100 pF C19, C20 multilayer ceramic chip capacitor 10 F, 50 V C21, C22 electrolytic capacitor 470 F; 63 V C30 multilayer ceramic chip capacitor 13 pF [3] C31 multilayer ceramic chip capacitor 2.2 pF [3] C33, C34, C35 multilayer ceramic chip capacitor 100 pF [3] C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V L1 microstrip - [4] (W L) 15 mm 13 mm - [4] (W L) 5 mm 26 mm - [4] (W L) 2 mm 49.5 mm (W L) 1.7 mm 3.5 mm L2 microstrip L3, L32 microstrip Kemet C1210X475K5RAC-TU or capacitor of same quality. [1] TDK C570X7R1H106KT000N or capacitor of same quality. TDK C4532X7R1E475MT020U or capacitor of same quality. L4 microstrip - [4] L5 microstrip - [4] (W L) 2 mm 9.5 mm - [4] (W L) 5 mm 13 mm - [4] (W L) 2 mm 11 mm [4] (W L) 2 mm 3 mm L30 microstrip L31 microstrip L33 microstrip - R1, R2 wire resistor 10 R3, R4 SMD resistor 5.6 R5, R6 wire resistor 100 R7, R8 potentiometer 10 k [1] American technical ceramics type 800B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. 0805 [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF884P_BLF884PS Product data sheet +VG1 R7 C19 +VD1 L5 R3 C21 C11 C34 L32 50 Ω C33 R1 C17 R5 C36 L30 C13 L1 C15 L3 L31 L2 L33 L4 B2 C10 50 Ω B1 C31 C30 C1 C2 C3 C35 C4 C12 C37 C14 C16 C22 R6 C18 R2 C24 +VD2 001aao032 C20 R8 +VG2 See Table 9 for a list of components. Fig 5. Class-AB common source broadband amplifier UHF power LDMOS transistor 8 of 15 © NXP B.V. 2011. All rights reserved. BLF884P; BLF884PS Rev. 2 — 16 December 2011 All information provided in this document is subject to legal disclaimers. R4 C23 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 48 mm 45.7 mm +VG1 +VD1 R1 C17 R5 C21 + C23 R7 C36 C19 C21 R3 C11 C34 50 Ω C1 C33 C35 C31 C10 C4 C30 50 Ω C14 C2 C3 C12 C16 R4 4 mm C37 C15 C13 C20 R6 R8 C24 R2 C18 C22 +VG2 + 6.3 mm +VD2 26 mm 30.5 mm aaa-001709 See Table 9 for a list of components. Fig 6. Component layout for class-AB common source amplifier BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 2 1 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 0 5 Dimensions Unit(1) mm 10 mm scale A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.10 19.61 19.66 E e E1 F H H1 p Q(2) 9.53 9.53 1.14 19.94 12.83 3.38 1.70 9.27 9.27 0.89 18.92 12.57 3.12 1.45 q U1 U2 27.94 8.89 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.133 0.067 inches nom 0.35 min 0.136 0.145 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.123 0.057 References IEC JEDEC JEITA 0.25 0.51 1.345 0.39 0.01 0.02 1.1 1.335 0.38 sot1121a_po European projection Issue date 09-10-12 10-02-02 SOT1121A Fig 7. w2 33.91 9.65 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version w1 34.16 9.91 Package outline SOT1121A BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor Earless flanged LDMOST ceramic package; 4 leads SOT1121B D A F 5 D1 D U1 w2 H1 H c D 2 1 U2 E1 E 4 3 b Q w3 e 0 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.08 19.61 19.66 E e E1 F H H1 Q U1 U2 w2 w3 9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 8.89 0.51 0.25 9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 inches nom 0.35 0.02 0.01 min 0.136 0.145 0.003 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA Issue date 09-10-12 09-12-14 SOT1121B Fig 8. sot1121b_po European projection Package outline SOT1121B BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAR Peak-to-Average power Ratio RF Radio Frequency SMD Surface Mounted Device UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF884P_BLF884PS v.2 20111216 Product data sheet - BLF884P_BLF884PS v.1 Modifications: BLF884P_BLF884PS v.1 BLF884P_BLF884PS Product data sheet • • • Table Table 1. on page 1: Has been updated Table Table 7. on page 3: Has been updated Removed section “Reliability” 20111013 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 - © NXP B.V. 2011. All rights reserved. 12 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 13.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 13.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF884P_BLF884PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 NXP Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.2 8 9 10 11 12 13 13.1 13.2 13.3 13.4 13.5 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Broadband RF figures . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Impedance information . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 December 2011 Document identifier: BLF884P_BLF884PS