BSR17A NPN General Purpose Amplifier C E B SOT-23 MARK: U92 Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings Symbol *Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current (DC) 200 mA TJ Junction Temperature -55 ~ +150 °C TSTG Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD R θ JA *Ta = 25°C unless otherwise noted Characteristic Total Device Dissipation Max Units 350 mW mW/℃ Derate above 25℃ 2.8 Thermal Resistance, Junction to Ambient 357 ℃/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. ©2007 Fairchild Semiconductor Corporation Rev. A 1 www.fairchildsemi.com NPN General Purpose Amplifier June 2007 Symbol *Ta = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IB = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IB = 0 6.0 ICBO Collector-Cutoff Current VCB = 30 V, TA = 150°C 5.0 µA ICEX Emitter-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA IBEX IBEX Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA V On Characteristics hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V VCE(sat) Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA VBE(sat) Emitter-Base Breakdown Voltage * 40 70 100 60 30 IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 300 300 0.2 0.3 V V 0.85 0.95 V V Small Signal Characteristics fT Transition Frequency IC = 20 mA, VCE = 20 V, f = 100 MHz MHz Ccb Collector-Base Capacitance VCB = 0.5 V, IE = 0, f = 1.0 MHz 4.0 pF Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 kΩ hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400 hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40 µS IC = 10 mA, IB1 = 1.0 mA,VEB= 0.5 V 35 ns 4.0 pF IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns 50 ns Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 % Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) 2 BSR17A Rev. A www.fairchildsemi.com BSR17A NPN General Purpose Amplifier Electrical Characteristics BSR17A NPN General Purpose Amplifier Typical Performance Characteristics 3 BSR17A Rev. A www.fairchildsemi.com BSR17A NPN General Purpose Amplifier Typical Performance Characteristics (continued) 4 BSR17A Rev. A www.fairchildsemi.com BSR17A NPN General Purpose Amplifier Typical Performance Characteristics (continued) Test Circuits 5 BSR17A Rev. A www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I23 6 BSR17A Rev. A www.fairchildsemi.com BSR17A NPN General Purpose Amplifier tm