BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS ••N-Channel ••Enhancement mode ••Logic Level • Avalanche rated • 55 V RDS(on) 650 mΩ ID 0.54 A PG-SOT 23 1) Drain pin 3 Type Package Tape and Reel Marking BSS670S2L PG-SOT 23 L6327: 3000 pcs/reel BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 0.54 TA=70°C 0.43 ID puls 2.2 Avalanche energy, single pulse ID = 0.54 A, RG = 25 Ω 1) EAS 8.1 Gate source voltage VGS ± 20 V Power dissipation Ptot 0.36 W Pulsed drain current TA=25°C mJ TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 -55... +150 °C 55/150/56 1) Valid from devices with date code 0604 onwards Rev. 2.3 Page 1 2006-12-01 BSS670S2L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 290 @ min. footprint - - 350 @ 6 cm2 cooling area 2) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=1mA Gate threshold voltage, V GS = VDS ID=2.7µA Zero gate voltage drain current µA IDSS VDS=55V, V GS=0, T j=25°C - 0.01 0.1 VDS=55V, V GS=0, T j=150°C - 1 10 IGSS - 1 100 nA RDS(on) - 430 825 mΩ RDS(on) - 346 650 Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=4.5V, ID=270mA Drain-source on-state resistance VGS=10V, ID=270mA 2) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.3 Page 2 2006-12-01 BSS670S2L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 0.6 1.2 - S pF Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , gfs ID=0.54A Input capacitance Ciss VGS=0, VDS =25V, - 56 75 Output capacitance Coss f=1MHz - 13 18 Reverse transfer capacitance Crss - 7 10 Turn-on delay time t d(on) VDD=30V, VGS=4.5V, - 9 14 Rise time tr ID=0.54A, - 25 37 - 21 31 - 24 32 - 0.19 0.25 - 0.57 0.86 - 1.7 2.26 Turn-off delay time t d(off) Fall time tf RG =130Ω ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD=40V, ID=0.54A VDD=40V, ID=0.54A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=40V, ID=0.54A - 3.1 - V IS TA=25°C - - 0.38 A - - 2.2 Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF =0.54A - 0.8 1.1 V Reverse recovery time trr VR =30V, IF =lS , - 51 64 ns Reverse recovery charge Qrr diF /dt=100A/µs - 22 28 nC Rev. 2.3 Page 3 2006-12-01 BSS670S2L 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS≥ 10 V BSS670S2L 0.6 W A 0.32 0.5 0.28 0.45 BSS670S2L 0.4 0.24 ID P tot 0.38 0.35 0.2 0.3 0.16 0.25 0.12 0.2 0.15 0.08 0.1 0.04 0.05 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 160 TA TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp) parameter : D = 0 , T A = 25 °C parameter : D = tp/T 10 1 °C BSS670S2L 10 3 BSS670S2L K/W A /ID = 100 µs n) (o DS 1 ms ID R 10 2 ZthJS 10 0 V tp = 23.0µs DS 10 ms 10 -1 10 1 10 0 D = 0.50 0.20 10 -1 0.05 10 -2 single pulse DC 10 -3 -1 10 10 0 10 1 V 0.02 10 -2 10 10 -3 -7 10 2 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s tp VDS Rev. 2.3 0.10 Page 4 2006-12-01 10 0 BSS670S2L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C parameter: t p = 80 µs RDS(on) = f (ID) parameter: VGS 3 A 1500 4.5V 10V 6V 5V mΩ R DS(on) 1200 ID 2 4V 3.5V 4V 4.5V 5V 6V 10V 1100 1000 900 800 1.5 700 600 1 500 3.5V 400 300 0.5 200 3V 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 V 5 VDS 0.2 0.4 0.6 gfs = f(ID); Tj=25°C parameter: t p = 80 µs parameter: gfs 2.2 2.2 A S 1.8 1.8 1.6 1.6 gfs ID 8 Typ. forward transconductance ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max 1.4 1.4 1.2 1.2 1 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 Rev. 2.3 0.5 1 1.5 2 2.5 3 3.5 4 1.2 A ID 7 Typ. transfer characteristics 0 0 0.8 0 0 V 5 VGS Page 5 0.4 0.8 1.2 1.6 2.2 A ID 2006-12-01 BSS670S2L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 270 mA, VGS = 10 V parameter: VGS = VDS 1900 BSS670S2L 2.5 mΩ V V GS(th) RDS(on) 1600 1400 1200 10 µA 1.5 2 µA 1000 800 98% 1 600 400 0.5 typ 200 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 1 pF BSS670S2L A 10 2 10 0 C IF Ciss Coss Crss 10 1 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 10 -2 0 30 V VDS Rev. 2.3 0.4 0.8 1.2 1.6 2 2.4 V VSD Page 6 2006-12-01 3 BSS670S2L 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (Q Gate) V(BR)DSS = f (Tj) parameter: I D = 0.54 A pulsed parameter: I D=10 mA 16 BSS670S2L 66 V V(BR)DSS V VGS 12 10 0,2 VDS max 62 60 0,8 VDS max 8 58 6 56 4 54 2 52 0 0 0.4 0.8 1.2 1.6 2 nC 2.6 QGate Rev. 2.3 BSS670S2L Page 7 50 -60 -20 20 60 100 °C 180 Tj 2006-12-01 BSS670S2L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 8 2006-12-01