INFINEON BSS98

BSS 98
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...1.6 V
Pin 1
Pin 2
S
Pin 3
G
Type
VDS
ID
RDS(on)
Package
Marking
BSS 98
50 V
0.3 A
3.5 Ω
TO-92
SS98
Type
BSS 98
BSS 98
BSS 98
Ordering Code
Q62702-S053
Q62702-S517
Q62702-S635
D
Tape and Reel Information
E6288
E6296
E6325
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
V
Drain-gate voltage
Values
50
V
DGR
RGS = 20 kΩ
50
Gate source voltage
VGS
± 14
Gate-source peak voltage,aperiodic
Vgs
± 20
Continuous drain current
ID
TA = 25 °C
A
0.3
IDpuls
DC drain current, pulsed
TA = 25 °C
1.2
Ptot
Power dissipation
TA = 25 °C
Semiconductor Group
Unit
W
0.63
1
12/05/1997
BSS 98
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 200
DIN humidity category, DIN 40 040
K/W
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V
50
-
-
0.8
1.2
1.6
VDS = 50 V, VGS = 0 V, Tj = 25 °C
-
0.05
0.5
VDS = 50 V, VGS = 0 V, Tj = 125 °C
-
-
5
VDS = 30 V, VGS = 0 V, Tj = 25 °C
-
-
100
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
10
100
Ω
RDS(on)
-
1.8
3.5
VGS = 4.5 V, ID = 0.3 A
-
2.8
6
2
nA
nA
VGS = 10 V, ID = 0.3 A
Semiconductor Group
µA
12/05/1997
BSS 98
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 0.3 A
Input capacitance
0.12
pF
-
40
55
-
15
25
-
5
8
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
0.23
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 Ω
Rise time
-
5
8
-
6
9
-
12
16
-
15
20
tr
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RG = 50 Ω
Semiconductor Group
3
12/05/1997
BSS 98
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TA = 25 °C
Inverse diode direct current,pulsed
-
0.3
-
-
1.2
VSD
VGS = 0 V, IF = 0.6 A
Semiconductor Group
-
ISM
TA = 25 °C
Inverse diode forward voltage
A
V
-
4
1
1.4
12/05/1997
BSS 98
Power dissipation
Ptot = ƒ(TA)
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
0.32
0.70
W
A
0.60
Ptot
ID
0.55
0.24
0.50
0.45
0.20
0.40
0.16
0.35
0.30
0.12
0.25
0.20
0.08
0.15
0.10
0.05
0.00
0
0.04
20
40
60
80
100
120
°C
160
0.00
0
20
40
60
80
100
120
TA
°C
160
TA
Safe operating area ID=f(VDS)
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
parameter : D = 0.01, TC=25°C
60
V
58
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
12/05/1997
BSS 98
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.70
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
11
Ptot = 1W
A
lk i h
j
0.60
ID
a b
Ω
g
VGS [V]
a
2.0
0.55
f
0.50
0.45
0.40
e
0.35
0.30
b
2.5
c
3.0
d
3.5
e
4.0
f
4.5
g
5.0
h
6.0
d i
7.0
0.25
j
8.0
0.20
k
9.0
l
10.0
c
RDS (on)
c
d
e
f
9
8
7
6
5
4
0.15
3
g
2
h
i
kl j
0.10
VGS [V] =
b
0.05
a
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1
V
0
0.00
5.0
a
2.0
b
2.5
c
3.0
0.10
d
3.5
e
f
4.0 4.5
0.20
g
5.0
0.30
h
i
6.0 7.0
0.40
VDS
k
l
9.0 10.0
A
0.60
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0.65
ID
j
8.0
0.30
A
S
0.55
0.26
gfs
0.50
0.24
0.22
0.45
0.20
0.40
0.18
0.35
0.16
0.30
0.14
0.25
0.12
0.10
0.20
0.08
0.15
0.06
0.10
0.04
0.05
0.00
0
1
2
3
Semiconductor Group
4
5
6
7
8
V
VGS
10
6
0.02
0.00
0.00
0.10
0.20
0.30
0.40
A
ID
0.55
12/05/1997
BSS 98
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.3 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
9
2.6
Ω
V
2.2
RDS (on)
VGS(th)
7
2.0
1.8
6
98%
1.6
5
1.4
98%
typ
1.2
4
1.0
3
2%
0.8
typ
0.6
2
0.4
1
0.2
0
-60
-20
20
60
100
°C
0.0
-60
160
-20
20
60
100
°C
Tj
160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3
10 1
pF
A
IF
C
10 2
10 0
Ciss
Coss
10 1
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Crss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
5
10
Semiconductor Group
15
20
25
30
V
VDS
40
10 -2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
12/05/1997