SEME BUL52B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54 FEATURES TO220 Pin 1 – Base SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES Pin 2 – Collector Pin 3 – Emitter • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 800V VCEO Collector – Emitter Voltage (IB = 0) 400V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 8A IC(PK) Peak Collector Current 12A IB Base Current 4A Ptot Total Dissipation at Tcase = 25°C Tstg Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 100W –55 to +150°C Prelim. 3/95 SEME BUL52B LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 400 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 800 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* VCE(sat)* VBE(sat)* DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Typ. Unit V VCB = 800V IB = 0 Max. 10 TC = 125°C 100 VCE = 400V 100 VEB = 9V 10 IC = 0 TC = 125°C IC = 100mA VCE = 5V 20 30 IC = 1A VCE = 5V 15 25 IC = 3A VCE = 1V 10 15 TC = 125°C 5 100 45 µA µA µA — IC = 100mA IB = 20mA 0.05 0.1 IC = 1A IB = 0.2A 0.1 0.2 IC = 2A IB = 0.4A 0.15 0.3 IC = 3A IB = 0.6A 0.3 0.5 IC = 1A IB = 0.2A 0.8 1.0 IC = 2A IB = 0.4A 0.9 1.1 IC = 3A IB = 0.6A 0.95 1.2 V V ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 20V f = 1MHz 40 pF * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95