SEME-LAB BUL52

SEME
BUL52B
LAB
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
MECHANICAL DATA
Dimensions in mm
10.2
4.5
6.3
1.3
3.6 Dia.
18.0
15.1
Designed for use in
electronic ballast applications
•
•
•
•
•
1 2 3
14.0
1.3
0.85
0.5
2.54 2.54
FEATURES
TO220
Pin 1 – Base
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Pin 2 – Collector
Pin 3 – Emitter
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
800V
VCEO
Collector – Emitter Voltage (IB = 0)
400V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC
Continuous Collector Current
8A
IC(PK)
Peak Collector Current
12A
IB
Base Current
4A
Ptot
Total Dissipation at Tcase = 25°C
Tstg
Operating and Storage Temperature Range
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
100W
–55 to +150°C
Prelim. 3/95
SEME
BUL52B
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage IC = 10mA
400
V(BR)CBO
Collector – Base Breakdown Voltage
IC = 1mA
800
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 1mA
10
ICBO
Collector – Base Cut–Off Current
ICEO
Collector – Emitter Cut–Off Current
IEBO
Emitter Cut–Off Current
hFE*
VCE(sat)*
VBE(sat)*
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Typ.
Unit
V
VCB = 800V
IB = 0
Max.
10
TC = 125°C
100
VCE = 400V
100
VEB = 9V
10
IC = 0
TC = 125°C
IC = 100mA
VCE = 5V
20
30
IC = 1A
VCE = 5V
15
25
IC = 3A
VCE = 1V
10
15
TC = 125°C
5
100
45
µA
µA
µA
—
IC = 100mA
IB = 20mA
0.05
0.1
IC = 1A
IB = 0.2A
0.1
0.2
IC = 2A
IB = 0.4A
0.15
0.3
IC = 3A
IB = 0.6A
0.3
0.5
IC = 1A
IB = 0.2A
0.8
1.0
IC = 2A
IB = 0.4A
0.9
1.1
IC = 3A
IB = 0.6A
0.95
1.2
V
V
ft
DYNAMIC CHARACTERISTICS
Transition Frequency
IC = 0.2A
VCE = 4V
20
MHz
Cob
Output Capacitance
VCB = 20V
f = 1MHz
40
pF
* Pulse test tp = 300µs , δ < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95