BUP 311D Infineon IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB ON REQUEST C67078-A4102 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 20 TC = 100 °C 12 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 40 IF Diode forward current TC = 100 °C tbd Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C tbd Ptot Power dissipation TC = 25 °C W 125 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group Unit 1 °C May-06-1999 BUP 311D Infineon Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Values Unit °C - Thermal Resistance Thermal resistance, junction - case RthJC ≤1 Diode thermal resistance, chip case RthJCD ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.3 mA, Tj = 25 °C V 4.5 5.5 6.5 VGE = 15 V, IC = 8 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 8 A, Tj = 125 °C - 3.1 3.7 VGE = 15 V, IC = 16 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 16 A, Tj = 125 °C - 4.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current - - 0.4 IGES VGE = 25 V, VCE = 0 V Semiconductor Group mA nA - 2 - 120 May-06-1999 BUP 311D Infineon AC Characteristics Transconductance gfs VCE = 20 V, IC = 8 A Input capacitance 4 pF - 600 tbd - 60 tbd - 38 tbd Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Ω Rise time - 55 tbd - 50 tbd - 380 tbd - 80 tbd tr VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Ω Semiconductor Group 3 May-06-1999 BUP 311D Infineon Free-Wheel Diode Diode forward voltage VF V IF = 8 A, VGE = 0 V, Tj = 25 °C - tbd tbd IF = 8 A, VGE = 0 V, Tj = 125 °C - tbd - Reverse recovery time trr ns IF = 8 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/µs, Tj = 25 °C Reverse recovery charge - tbd tbd Qrr µC IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/µs Tj = 25 °C - tbd tbd Tj = 125 °C - tbd tbd Semiconductor Group 4 May-06-1999 BUP 311D Infineon Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 130 22 W A 110 Ptot IC 100 18 16 90 80 14 70 12 60 10 50 8 40 6 30 4 20 2 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp ) parameter: D = tp / T IGBT 10 1 10 2 t = 15.0µs p K/W A IC ZthJC 10 0 10 1 100 µs 10 -1 D = 0.50 0.20 10 0 0.10 1 ms 0.05 10 -2 0.02 0.01 single pulse 10 ms 10 -1 0 10 10 1 10 2 DC 3 10 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 May-06-1999 BUP 311D Infineon Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 20 20 A IC 16 14 A 17V 15V 13V 11V 9V 7V IC 16 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 25 A 22 IC 20 18 16 14 12 10 8 6 4 2 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 6 May-06-1999 BUP 311D Infineon Typ. switching time Typ. switching time t = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, IC =8 A par.:VCE=600V, VGE = ±15V, RG =153Ω 10 3 10 3 t tdoff t tdoff ns tr 10 2 ns tf tdon tr 10 2 tf tdon 10 1 0 4 8 12 16 20 24 A IC 10 1 0 30 50 100 150 200 250 300 350 400 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.:VCE=600V, VGE = ±15V, RG =153Ω par.:VCE=600V, VGE = ±15V, IC =8 A E 10 10 mWs mWs 8 Ω 500 RG E 8 7 7 6 6 5 5 Eon 4 4 3 3 Eon 2 2 Eoff 1 0 0 1 4 8 12 16 20 24 A 0 0 30 IC Semiconductor Group Eon 50 100 150 200 250 300 350 400 Ω 500 RG 7 May-06-1999 BUP 311D Infineon Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A C = f (VCE) 10 4 20 V pF VGE 16 C 14 10 3 12 Ciss 10 8 10 2 6 C oss 4 C rss 2 0 0 -4 -8 -12 -16 -20 10 1 0 -28 5 10 15 20 25 30 V 40 VCE Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 ICsc/IC(90°C) ICpuls/I C 6 1.5 4 1.0 2 0.5 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 8 0.0 0 200 400 600 800 1000 1200 V 1600 VCE May-06-1999 BUP 311D Infineon Typ. forward characteristics Transient thermal impedance Zth JC = ƒ(tp ) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 30 A 26 IF K/W 24 ZthJC 22 10 0 20 18 Tj=125°C 16 Tj=25°C D = 0.50 14 0.20 12 10 10 -1 0.10 0.05 8 0.02 6 single pulse 0.01 4 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 9 May-06-1999