DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD32 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD32 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD 120 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability handbook, k halfpage a • Available in ammo-pack. MGL571 Fig.1 Simplified outline (SOD120) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS MAX. UNIT repetitive peak reverse voltage − BYD32D VR MIN. 200 V BYD32G − 400 V BYD32J − 600 V continuous reverse voltage BYD32D − 200 V BYD32G − 400 V BYD32J − 600 V IF(AV) average forward current Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period; see Fig.2 − 0.76 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax − 15 A Tstg storage temperature Tj junction temperature see Fig.3 −65 +175 °C −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IF = 1 A; see Fig.4 IR reverse current VR = VRRMmax trr reverse recovery time 1998 Dec 03 MAX. 1.3 UNIT V 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.5 100 µA when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.7 250 ns 2 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD32 series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.6. 1998 Dec 03 3 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD32 series GRAPHICAL DATA MDA809 0.8 MDA813 200 Tj handbook, halfpage handbook, halfpage IF(AV) (°C) (A) 160 0.6 120 G J 0.4 80 0.2 40 0 0 0 40 80 200 160 Tamb (°C) 120 0 200 400 VR (V) 600 a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.6. Fig.2 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.3 MDA818 10 IF Maximum permissible junction temperature as a function of reverse voltage. MDA823 102 handbook, halfpage handbook, halfpage IR (µA) (A) 8 10 6 1 4 10−1 2 10−2 0 0 1 2 VF (V) 3 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.4 40 80 120 160 200 Tj (°C) VR = VRRMmax. Forward current as a function of forward voltage; typical values. 1998 Dec 03 0 Fig.5 4 Reverse current as a function of junction temperature; typical values. Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD32 series 50 handbook, halfpage 5 3 50 2 3 MBK812 Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. handbook, full pagewidth IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.7 Test circuit and reverse recovery time waveform and definition. 1998 Dec 03 5 MAM057 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD32 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD120 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b D max. G1 max. L min. mm 0.6 2.15 3.0 28 0 2 4 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-05-25 SOD120 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Dec 03 6 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD32 series NOTES 1998 Dec 03 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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