DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYX10G Rectifier Product specification 1996 May 24 Philips Semiconductors Product specification Rectifier BYX10G FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current 2/3 page k(Datasheet) • Excellent stability • Available in ammo-pack. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1600 V VRRM repetitive peak reverse voltage − 1600 V VRWM crest working reverse voltage − 800 V IF(AV) average forward current IFSM non-repetitive peak forward current Tstg storage temperature Tj junction temperature 1996 May 24 Ttp = 50 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 1.2 A Tamb = 60 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.6 A t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRWMmax − see Fig.5 2 25 A −65 +175 °C −65 +175 °C Philips Semiconductors Product specification Rectifier BYX10G ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER CONDITIONS forward voltage reverse current MIN. TYP. MAX. UNIT IF = 2 A; Tj = Tj max; see Fig.6 − − 1.5 V IF = 2 A; see Fig.6 − − 1.5 V VR = VRWMmax; see Fig.7 − − 1 µA VR = VRWMmax; Tj = 150 °C; see Fig.7 − − 200 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance − 30 − pF VR = 0 V; f = 1 MHz; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE 46 K/W 100 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1996 May 24 3 UNIT Philips Semiconductors Product specification Rectifier BYX10G GRAPHICAL DATA MBG040 MBH392 1.0 1.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0 0 0 40 80 120 0 160 200 Ttp (oC) a = 1.57; VR = VRWMmax; δ = 0.5. Lead length 10 mm. Fig.2 Fig.3 MGC737 1.6 80 120 160 200 Tamb (°C) a = 1.57; VR = VRWMmax; δ = 0.5. Device mounted as shown in Fig.9. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). a = 3 2.5 handbook, halfpage 40 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBH393 200 handbook, halfpage 2 P (W) 1.57 1.42 1.2 Tj (°C) 100 0.8 0.4 0 0 0 0.2 0.4 0.6 0 0.8 1 IF(AV) (A) 400 800 VR (V) 1200 a = IF(RMS)/IF(AV); VR = VRWMmax; δ = 0.5. Fig.4 Solid line = VR. Dotted line = VRWM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 May 24 Fig.5 4 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Rectifier BYX10G MBG049 MGC738 3 10halfpage handbook, 6 handbook, I halfpage F (A) 5 IR (µA) 4 10 2 3 10 2 1 0 1 0 1.5 3 VF (V) 0 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.6 40 80 120 160 200 Tj (oC) VR = VRWMmax. Forward current as a function of forward voltage; maximum values. Fig.7 Reverse current as a function of junction temperature; maximum values. MBG030 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 102 VR (V) 10 3 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1996 May 24 Fig.9 Device mounted on a printed-circuit board. 5 Philips Semiconductors Product specification Rectifier BYX10G handbook, full pagewidth IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 May 24 6 MAM057 Philips Semiconductors Product specification Rectifier , PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 4.57 max 28 min Dimensions in mm. BYX10G a 28 min 0.81 max MBC880 Fig.11 SOD57. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 7